DSS17-06CR
Abstract: 17-06CR
Text: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V trr = 45 ns Electrically Isolated Back Surface Preliminary Data VRSM VRRM V V 600 600 Type A C ISOPLUS 247TM C DSS 17-06CR A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol
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17-06CR
247TM
DSS17-06CR
DSS17-06CR
17-06CR
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Untitled
Abstract: No abstract text available
Text: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V trr = 45 ns Electrically Isolated Back Surface VRSM VRRM V V Type A C ISOPLUS 247TM C A Isolated back surface * 600 600 DSS 17-06CR A = Anode, C = Cathode * Patent pending Symbol Conditions Maximum Ratings
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17-06CR
247TM
DSS17-06CR
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DSS17-06CR
Abstract: dss17-06 DC3010
Text: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V trr = 45 ns Electrically Isolated Back Surface VRSM VRRM V V Type A C ISOPLUS 247TM C A Isolated back surface * 600 600 DSS 17-06CR A = Anode, C = Cathode * Patent pending Symbol Conditions Maximum Ratings
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17-06CR
247TM
DSS17-06CR
DSS17-06CR
dss17-06
DC3010
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP4816GSM-3 Asymmetric Dual N-channel Power MOSFET with Integrated Schottky Diode Simple Drive Requirement S1/D2 S1/D2 Ideal for DC-DC Converters CH-1 BV DSS 30V RDS ON 22mΩ ID BV DSS RDS(ON) ID 6.7A 30V 13mΩ 11.5A S1/D2
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AP4816GSM-3
AP4816GSM-3
AP4816
4816GSM
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Untitled
Abstract: No abstract text available
Text: PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET plus MOSFET with Schottky Diode RoHs Compliant Containing No Lead and Bromide Typical values unless otherwise specified Integrated Monolithic Schottky Diode V DSS VGS R DS(on) R DS(on) l Low Profile (<0.7 mm)
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wit69
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Untitled
Abstract: No abstract text available
Text: PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET plus MOSFET with Schottky Diode RoHs Compliant Containing No Lead and Bromide Typical values unless otherwise specified Integrated Monolithic Schottky Diode V DSS VGS R DS(on) R DS(on) l Low Profile (<0.7 mm)
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IRF6893MPbF
IRF6893MTRPbF
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Untitled
Abstract: No abstract text available
Text: NTLJF3118N Power MOSFET and Schottky Diode 20 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features •ăWDFN 2x2 mm Package Provides Exposed Drain Pad for V BR DSS Excellent Thermal Conduction
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NTLJF3118N
SC-88
NTLJF3118N/D
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NTLJF3118N
Abstract: NTLJF3118NTAG NTLJF3118NTBG
Text: NTLJF3118N Power MOSFET and Schottky Diode 20 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features •ăWDFN 2x2 mm Package Provides Exposed Drain Pad for V BR DSS Excellent Thermal Conduction
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NTLJF3118N
SC-88
NTLJF3118N/D
NTLJF3118N
NTLJF3118NTAG
NTLJF3118NTBG
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SSM4816SM
Abstract: No abstract text available
Text: SSM4816SM DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE Simple drive requirement MOSFET-1 BV DSS S1/D2 S1/D2 Suitable for DC-DC Converters R DS ON 22mΩ ID MOSFET-2 BV DSS R DS(ON) ID 6.7A 30V 13mΩ 11.5A S1/D2 D1 Fast switching performance SO-8 G2 S2/A S2/A
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SSM4816SM
SSM4816SM
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SUM60P05-11LT
Abstract: SUM60P05
Text: SUM60P05-11LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) –55 rDS(on) (W) ID (A) 0.011 @ VGS = –10 V –60a 0.0175 @ VGS = –4.5 V –60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode
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SUM60P05-11LT
S-05060--Rev.
12-Nov-01
SUM60P05-11LT
SUM60P05
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T2D21
Abstract: SUM60P05
Text: SUM60P05-11LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) –55 rDS(on) (W) ID (A) 0.011 @ VGS = –10 V –60a 0.0175 @ VGS = –4.5 V –60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode
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SUM60P05-11LT
08-Apr-05
T2D21
SUM60P05
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SUM60N04-06T
Abstract: No abstract text available
Text: SUM60N04-06T New Product Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0055 @ VGS = 10 V 60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature
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SUM60N04-06T
S-05062--Rev.
12-Nov-01
SUM60N04-06T
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Untitled
Abstract: No abstract text available
Text: SUM60N04-05T Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 40 0.0054 at VGS = 10 V 60a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature
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SUM60N04-05T
SUM60N04-05T-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: □IXYS Power Schottky Rectifier DSS 16 W = 16 A V RRM = 35 - 45 V TO-220 AC Preliminary data TO-263 S-Type Type RRM V 35 45 35 45 DSS 16-0035A(S) DSS 16-0045A(S) Symbol Test Conditions ^FRMS "^VJ ^FAV Tc = 152°C; rectangular, d = 0.5 ^FSM tp = 10m s Maximum Ratings (per diode)
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O-220
O-263
6-0035A
6-0045A
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Untitled
Abstract: No abstract text available
Text: □IXYS_ Power Schottky Rectifier DSS 16 U V V RRM V rr m Type V 100 100 DSS 16-01A S Symbol Test Conditions ^FRMS "^"vj ^FAV Tc = 150°C; rectangular, d = 0.5 ^FSM tp = 1 0 m s Maximum Ratings (per diode) (50 Hz), sine Eas Current decaying linearly to zero in 1 |is
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6-01A
O-220
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Untitled
Abstract: No abstract text available
Text: nixY S VUM 24-05 Power MOSFET Stage for Boost Converters ^D25 V Dss ^D S o n Module for Power Factor Correction V RRM (Diode) V DSS V V 600 500 5 T ype I v DSS V DGR V GS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 k fì Continuous A A A 170 W
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Untitled
Abstract: No abstract text available
Text: □IXYS Power Schottky Rectifier DSS 2x160 = 2x159 A 'fa v m VRRM = 100 V Non isolated Preliminary data VRSM VRRM miniBLOC, SOT-227 B Type A2 V V 100 DSS 2x160-01A 100 Symbol Test Conditions Maximum Ratings per diode IDc ^FAVM Tc = 100°C; rectangular, d = 0.5
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2x160
2x159
OT-227
2x160-01A
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Untitled
Abstract: No abstract text available
Text: □IXYS Power Schottky Rectifier DSS25 = 25 A lFAV Preliminary data V RSM V RRM V Type V 35 45 35 45 Symbol DSS 25-0035A DSS 25-0045A Test Conditions ^FRMS "^VJ ^FAV Tc = 148°C; rectangular, d = 0.5 ^FSM tp = 1 0m s Maximum Ratings per diode (50 Hz), sine
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DSS25
5-0035A
5-0045A
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400v p - CHANNEL mos
Abstract: STH9N50D
Text: SGS-THOMSON STH9N50D M N - CHANNEL ENHANCEMENT MODE _ FREDFET PRELIMINARY DATA TYPE STH9N50D V dss RDS on Id 500 V 0.85 a 9 A • POWER MOS TRANSISTOR WITH FAST RECOVERY BULK DIODE: COMPLETE DIODE SPECIFICATION . PARTICULARLY SUITABLE FOR BRIDGE
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STH9N50D
O-218
400v p - CHANNEL mos
STH9N50D
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RD2001
Abstract: 5M MARKING CODE SCHOTTKY DIODE J332 CL65B
Text: PD-91649C International I«R Rectifier IRF7526D1 FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • P-Channel HEXFET • Low V F Schottky Rectifier • Generation 5 Technology • Micro8™ Footprint V dss = "30V
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PD-91649C
IRF7526D1
RD2001
5M MARKING CODE SCHOTTKY DIODE
J332
CL65B
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Untitled
Abstract: No abstract text available
Text: n ix Y S _ Power Schottky Rectifier DSS 10 TO-220 AC Preliminary data V RSM V RRM V W = 10 A VRRM = 100 V TO-263 S-Type Type V 100 100 DSS 10-01A(S) Symbol Test Conditions ^FRMS "^VJ ^FAV Tc = 155°C; rectangular, d = 0.5 ^FSM tp = 10m s Maximum Ratings (per diode)
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O-220
O-263
0-01A
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10n50d
Abstract: STH10N50
Text: SGS-THOMSON STH10N50D EO N - CHANNEL ENHANCEMENT MODE FREDFET PRELIMINARY DATA TYPE STH 10N 50D V dss RDS on Id 500 V 0 .6 5 il 10 A • POWER MOS TRANSISTOR WITH FAST RECOVERY BULK DIODE: COMPLETE DIODE SPECIFICATION . PARTICULARLY SUITABLE FOR BRIDGE CONFIGURATION
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STH10N50D
SC06020
10n50d
STH10N50
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Untitled
Abstract: No abstract text available
Text: International Iö R Rectifier PD - 9.1648A IRF7524D1 PRELIMINARY FETKY M OSFET & Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint V dss = -20V R d s o h
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IRF7524D1
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fs10ash
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10ASH-3 HIGH-SPEED SWITCHING USE FS10ASH-3 • 2.5V DRIVE • V dss . • TDS ON (MAX) • • I D . • Integrated Fast Recovery Diode (TYP.) .150V •• 160m£2 . 10A .90ns
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FS10ASH-3
100nH
571QQ23
fs10ash
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