FS10ASH-06
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE FS10ASH-06 OUTLINE DRAWING Dimensions in mm 0.5 ± 0.1 2.3 2.3 2.3MIN. 1.0 A 0.5 ± 0.2 0.8 2.3 0.9MAX. 1.0MAX. 5.5 ± 0.2 r 10MAX. 1.5 ± 0.2 6.5 5.0 ± 0.2 q w e wr ¡2.5V DRIVE ¡VDSS . 60V
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FS10ASH-06
10MAX.
FS10ASH-06
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FS10ASH-3
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FS10ASH-3 HIGH-SPEED SWITCHING USE FS10ASH-3 OUTLINE DRAWING Dimensions in mm 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 r A 0.5 ± 0.2 0.8 2.3 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 q w e wr ¡2.5V DRIVE ¡VDSS . 150V
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FS10ASH-3
10MAX.
FS10ASH-3
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FS10ASH-2 HIGH-SPEED SWITCHING USE FS10ASH-2 OUTLINE DRAWING 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 r A 0.5 ± 0.2 0.8 2.3 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 Dimensions in mm q w e wr ¡2.5V DRIVE ¡VDSS . 100V
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FS10ASH-2
10MAX.
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FS10ASH-03
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FS10ASH-03 HIGH-SPEED SWITCHING USE FS10ASH-03 OUTLINE DRAWING Dimensions in mm 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 r A 0.5 ± 0.2 0.8 2.3 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 q w e wr ¡2.5V DRIVE ¡VDSS . 30V
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FS10ASH-03
10MAX.
FS10ASH-03
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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FS10ASH-06
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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FS10ASH-06
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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1002ds
Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5
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24EMP
BRC124ETP
BRC143ETP
BRC144ECM
CR3KM-12
FS10KM-6
FS10VS-6
FS16KM-6
FS16VS-6
HAT3017R
1002ds
4008ZB
2SC 9012
MP 1009 es
2SC 8050
20AAJ-8H
6020v4
2SC1417
2SC 8550
cr3as
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET ! FS10ASH-03 ! i 1 I HIGH-SPEED SWITCHING USE FS10ASH-03 • 2.5V DRIVE • V d s s . •30V • TDS ON (MAX) .
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FS10ASH-03
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fs10ash
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10ASH-3 HIGH-SPEED SWITCHING USE FS10ASH-3 • 2.5V DRIVE • V dss . • TDS ON (MAX) • • I D . • Integrated Fast Recovery Diode (TYP.) .150V •• 160m£2 . 10A .90ns
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FS10ASH-3
100nH
571QQ23
fs10ash
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10ASH-2 HIGH-SPEED SWITCHING USE FS10ASH-2 • 2.5V DRIVE • VDSS . •100V • rDS ON (MAX) . • I D .
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FS10ASH-2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10ASH-03 HIGH-SPEED SWITCHING USE FS10ASH-03 ' 2.5V DRIVE . ' V ' rDS ON (MAX) . d ss ' Id . ' Integrated Fast Recovery Diode (TYR) .30V . 92mi2 .10A 35ns APPLICATION M otor control, Lamp control, Solenoid control
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FS10ASH-03
92mi2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE FS10ASH-06 ' 2.5V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) .60V . 73mi2 .10A 55ns APPLICATION
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FS10ASH-06
73mi2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE FS10ASH-06 OUTLINE DRAWING Dimensions in mm 6.5 5.0 ±0.2 3 ^ -F T 0.9MAX. 0.5 ±0 .2 Í 2.3 C /fl 2.3 i 9 fl GATE DRAIN SOURCE DRAIN • 2.5V DRIVE • VDSS .
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FS10ASH-06
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mosfet fs series
Abstract: No abstract text available
Text: • L O W VOLTAGE POWER MOSFET FS SERIES 2.5V DRIVE (CONTINUED) Electrical characteristics (TYP.) Type No. w FS5ASH-2 ★ FS5UMH-2 FSSVSH-2 FS5KMH-2 FSIOASH-2 FS10UMH-2 * * ★ ★ ★ Hr FStOVSH-2 FSIOKMH-2 FSIOSMH-2 1 v aas ' ★ ★ ★ ★ ★ ★ ★
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FS10UMH-2
FS30ASH-2
FS30UMH-2
FS30VSH-2
FS30KMH-2
FS30SMH-2
FS50UMH-2
FS50VSH-2
FS50KMH-2
FS50SMH-2
mosfet fs series
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FS30ASH03
Abstract: No abstract text available
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O C t F O fT T i D d t 3 Selector Guide Discrete MOSFET - Low Voltage Trench Gate 2.5V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Electrical Characteristics
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FS10ASH-03
FS10UMH-03
O-220
FS10VSH-03
O-220S
FS10KMH-03
O-220FN
FS30ASH-03
FS30UMH-03
FS30ASH03
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FS10KM12
Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Text: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings
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O-220S
CT20VS-8
CT20VSL-8
O-220C
O-220F
CT20TM-8
CT20AS-8
CT20ASL-8
CT20ASJ-8
CT20VM-8
FS10KM12
FS10SM16A
FS20KM-5
FS10SM18A
FS7UM16A
FS18SM10
CT40TMH
FS7UM-16A
FX6KM-06
CT60AM-20
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Untitled
Abstract: No abstract text available
Text: mNEHEX ShOft FOTITI DStS Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 2.5V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Device to Pd
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FS10ASH-2
FS10UMH-2
FS10VSH-2
FS10KMH-2
FS10SMH-2
FS30ASH-2
FS30UMH-2
FS30VSH-2
FS30KMH-2
FS30SMH-2
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Untitled
Abstract: No abstract text available
Text: Short Form Data Selector Guide Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Discrete MOSFET - Low Voltage Trench Gate (continued) 2.5V Driver Voltage n-channel MOSFETs Electrical Characteristics Maximum Ratings, Tc = 25°C
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O-220
O-220S
O-220FN
FS10ASH-2
FS10UMH-2
FS10VSH-2
FS10O
72R4L
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS1OASH-2 HIGH-SPEED SWITCHING USE FS1 OASH-2 ♦ f ' 2.5V DRIVE ' V . . 1oov ' rDS ON (MAX) . . 0.21 Q. ' Id . . 10A ' Integrated Fast Recovery Diode (TYP.) d ss 95ns A P P LIC A TIO N
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS1OASH-3 HIGH-SPEED SWITCHING USE FS1 OASH-3 OUTLINE DRAWING Dimensions in mm 6.5 5 .0 1 0 .2 l] 0 .5 1 0 .2 0.8 Q i ' 2.5V DRIVE ' V d s s . .,150V 160mi2 . 10A
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160mi2
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Untitled
Abstract: No abstract text available
Text: mNBŒX S hO ft FOCITÌ DSt3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Low Voltage Trench Gate 2.5V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Electrical Characteristics
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FS10ASH-03
FS10UMH-03
FS10VSH-03
FS10KMH-03
FS30ASH-03
FS30UMH-03
FS30VSH-03
FS30KMH-03
FS30SMH-03
FS50ASH-03
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