marking 4F
Abstract: 4FV diode DIODE 3FV 60 3fv 60 9p marking
Text: SEMICONDUCTOR KDZ2.0FV~36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK C D FEATURES ・Small Package : TFSC ・Sharp Breakdown Characteristic. B A E MAXIMUM RATING Ta=25℃
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4FV diode
Abstract: 3fv 60 2FV 60 diode diode 3FV 60 mark 2fv diode kdz2.0fv KDZ9.1FV diode zener 3FV 36FV 4FV 60 on
Text: SEMICONDUCTOR KDZ2.0FV~36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : TFSC C D Sharp Breakdown Characteristic. B DIM A B C D E F A
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KDZ36FV
KDZ33FV
KDZ30FV
KDZ18FV
KDZ20FV
KDZ22FV
KDZ24FV
KDZ27FV
4FV diode
3fv 60
2FV 60 diode
diode 3FV 60
mark 2fv diode
kdz2.0fv
KDZ9.1FV
diode zener 3FV
36FV
4FV 60 on
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103a1
Abstract: pin configuration of IC 74138 52380 74138 ic diagram 9A113 ic pin configuration 74138 Betatherm E16-1 MAX6698 MAX6698EE
Text: 19-3476; Rev 3; 8/07 KIT ATION EVALU E L B AVAILA 7-Channel Precision Remote-Diode, Thermistor, and Local Temperature Monitor Features The MAX6698 precision multichannel temperature sensor monitors its own temperature, the temperatures of three external diode-connected transistors, and the
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MAX6698
MAX6698
103a1
pin configuration of IC 74138
52380
74138 ic diagram
9A113
ic pin configuration 74138
Betatherm
E16-1
MAX6698EE
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Thermistor
Abstract: No abstract text available
Text: 19-3476; Rev 3; 8/07 KIT ATION EVALU E L B AVAILA 7-Channel Precision Remote-Diode, Thermistor, and Local Temperature Monitor Features The MAX6698 precision multichannel temperature sensor monitors its own temperature, the temperatures of three external diode-connected transistors, and the
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MAX6698
MAX6698
Thermistor
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marking ac3
Abstract: G6G3
Text: Series EF 50-170Amp • DIODE • SCR/DIODE Modules • High Thermal Efficiency • Complete Power Control Circuits in a Single Package PART NUMBER IDENTIFICATION Series Type Current Amps 1Ø 3Ø EF -Case style D - 50 70 E - 75 100 F - 100 135 Example: EFD02CF
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50-170Amp
E72445)
EFD02CF
SJ/T11364
SJ/T11364
marking ac3
G6G3
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AN156
Abstract: X9530 X9530V14I X9530V14IZ Laser Diode Controller
Text: X9530 IGNS E W DES N R O F N DED EM ENT COMME RE PL AC D E N OT R E D N E enter at OM M Data Sheet port C p u S l NO R E C a m/tsc nic our Tech r www.intersil.co t c ta n o c o TERSIL 1-888-IN November 11, 2005 Temperature Compensated Laser Diode Controller
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X9530
2176-bit
FN8211
AN156
X9530
X9530V14I
X9530V14IZ
Laser Diode Controller
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pj 88 diode
Abstract: ERN26 L231 t930 30S3 ERN26-08 T151 T460 T760 T810
Text: E R N 2 6 4 ooa : Outline Drawings HIGH VO LTAG E FA S T R E C O V E R Y DIODE : Features • High voltage, high current • Diffused type • Flat package type : Applications Free-wheel diode for inverters and choppers • Others. Maximum Ratings and Characteristics
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ERN26
ERN26-08
50HzJEKÂ
EBTi30S3i
095t/R89
pj 88 diode
L231
t930
30S3
ERN26-08
T151
T460
T760
T810
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ESJC11-09
Abstract: lg magnetron esjc
Text: E S J C 1 1 9kV, 12kV : O utline D raw ings HIGH VOLTAGE SILICON DIODE E S JC 1 1 (i, E S J C 1 1 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.
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ESJC11-09
ESJC11-12
Maximu8-7681
19H24^
I95t/R
lg magnetron
esjc
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fr diode 205
Abstract: diode fr 207 TFK 450 B2 41880 A751
Text: 1N 41510 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Besondere Merkmale: • Kann als gütebestätigtes Bauelem ent g e lie fe rt werden Features: • Can be de live re d as "Q ualified semico n d ucto r d e v ic e “
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1N41510
fr diode 205
diode fr 207
TFK 450 B2
41880
A751
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Untitled
Abstract: No abstract text available
Text: 'E t ir j'y v V ? * * - - K 3 Phase Bridge Diode Diode Module O U T L IN E D IM E N S IO N S S30VTQ/S30VTAD 800V 30A Unit • mm i pap ^ t : A 0 r> < H & l i ' - K J g ^ d lM A X X j il . e ) V t o • S30V T A type has solid wire lead term inals. 11MAXX ^ 1 .6 )
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S30VTQ/S30VTAD
11MAXX
S30VT80
S30VTA80
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BAX12
Abstract: 74127
Text: BAX 12 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Schutzdiode in F ernsprechverm ittlungsanlagen Applications: Protection d io d e in telephone sw itching systems Features: Besondere Merkmale: • C ontrolled avalanche characteristic
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BAX12
BAX12
74127
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Untitled
Abstract: No abstract text available
Text: SAMYOJEMjÇOMDUCTOR C<W I 7fa DE|7T 7D7t - f 0002231 i) I * -— LED Light Emitting Diode 7997076 SANYO SEMICONDUCTOR CQRP u - i f F «F 76C 0 2 2 3 9 S DL-3020 L a s e r Diode T ^ V / - ¿>5" D S D L -3 0 2 0
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IN4002A
Abstract: IN4002 1N4002A
Text: 7fi2ûcn cl 000=1015 T77 • RHM ROHm Specilicanon Page Products Type T of 1N4002A, Glass Sealed R ectifying Diode i Glass Sealed R ectifying Diode 1. PRODUCTS S ilic o n d iffu sed ju n ctio n 1H4002A 2. TYPE 3. APPLICATION General r e c tif ic a tio n
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1N4002A;
1N4002A
D0-41)
RR4002
IN4002A
IN4002
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Untitled
Abstract: No abstract text available
Text: SANSHA ELECTRIC MFC CO SbE D 7T11243 DD0Q445 7flS M S E f l J DIODE MODULE DW F R 40A •Maximum Ratings It e m S ym bol D W F (R )4 0 A 3 0 D W F (R )4 0 A 4 0 U n it V rrm R e p e titive Peak Reverse V oltage 300 400 V V rsm N o n -R e p e titive Peak R everse V oltage
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7T11243
DD0Q445
0D004Hb
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snap-off diode
Abstract: SV14B HP-215A SV14C HP215A ND4142 ND1142-7F ND1143-7F
Text: L »NEC/ CALIFORNIA ISE D NEC • ^437414 0 0 G n 3 0 3 t v ND1142-7F ND1143-7F SILICON SNAP-OFF DIODE OUTLINE DIMENSIONS Units in mm FEATURES • L O W S E R IE S R E S IS T A N C E • H IG H R E L IA B IL IT Y OUTLINE 7F • LO W C O S T DESCRIPTION AND APPLICATIONS
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b437414
D0GJi130
ND1142-7F
ND1143-7F
ND4142
ND1143
L457414
ND1142-7F,
HP215A
snap-off diode
SV14B
HP-215A
SV14C
ND1143-7F
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D1NS6
Abstract: No abstract text available
Text: — JV JJ* Schottky Barrier Diode T ^ f v Ÿ ^ 'f T i — K Axial Diode • — K O U T L IN E D IM E N S IO N S D1NS6 60V 1A ■ R A TIN G S A bsolute Maximum R atings II @ D1NS6 ip- fit Unit T stg -5 5 -1 2 5 °C Tj 125 °C 60 V 65 V 1 A 30 A Symbol Storage Temperature
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panasonic date code e l
Abstract: MATSUA VCO
Text: ID« % Approved « i fp Checked « pp Checked ÌB U /T Y P E & $1 jjt/S T R U C T U R E GaP ^ /O U T L IN E Ptf Condition STANDARDS K G aP /R ed Light Em itting Diode(GaP) 7F #3 / Indicators Ü 3 /Attached ^ 1 I fp IFDC Vr 70 150 25 4 mW mA mA V Topr -25 ~
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1S1855
Abstract: NEC 1s1855 1S1857 1S1856 ND1551-7F snap-off diode ND1571-5F diode 5f DIODE E 7F ND1561-5F
Text: NE C/ 1SE D CALIFORNIA NEC b4S7414 0001*134 T 'O l - i £ ND1551-7F ND1561-5F ND1571-5F SILICON SNAP-OFF DIODE OUTLINE DIMENSIONS FEATURES Units in mm • U LTR A S H O R T R EV ER S E TU R N O N T IM E OUTLINE 5F • H IG H R E L IA B IL IT Y • LO W C O S T
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b427414
ND1551-7F
ND1561-5F
ND1571-5F
ND1551
ND1571-5F
ND1551-7F,
ND1561-5F,
1S1855
NEC 1s1855
1S1857
1S1856
snap-off diode
diode 5f
DIODE E 7F
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PPT Diode specifications
Abstract: 1 watt diode diode 4-1000 tubes 20 ampere diode
Text: 7K7 Syl vania Type DUODIODE HIGH-MU TRIODE o Separale Diode Cathode II IT 8BF-L-7 PHYSICAL SPECIFICATIONS B a s e . .L ock-In 8 Pin B u lb .
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Untitled
Abstract: No abstract text available
Text: S i GEC PLESSEY S E M I C O N D U C T O R S DS4177-1.2 MDFB85 FAST RECOVERY DIODE APPLICATIONS • Freewheel Diode. ■ D.C. Motor Drives. KEY PARAM ETERS 4500V RRM 2130 A ! f AV 20000A FSM 2200|iC V ■ Welding. Q. ■ High Frequency Rectification. ■ 6.0|IS
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DS4177-1
MDFB85
0000A
MDFB85
37bfl522
00301t
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nec 16f
Abstract: 16F NEC "12f" zener diode NEC 12F RD2.0F 12F NEC RD30F nec zener diode zener uz series
Text: NEC 1W ZENER DIODE HfCTMN KVKX N EC RD2.0F ~ RD82F Type RD TJ F Series are DHD D ouble Heatsink Diode Construction planar type zener diodes possessing an allowable power dissipation o f 1 w att. ¿0 8 ( F C a th o d e indication FEATURES • D H D (D ouble Heatsink D iode) C onstruction
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RD82F
--RD82F
nec 16f
16F NEC
"12f" zener diode
NEC 12F
RD2.0F
12F NEC
RD30F
nec zener diode
zener uz series
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Untitled
Abstract: No abstract text available
Text: E R E 4 1 - 1 5 I3A IW U H ü O utline D ra w in g s FAST RECOVERY DIODE Features >K n n ftT V , D a m p e r dio d e fo r high definition T V and jtjv : M a rk in g high resolution display. waie-. & H ig h vo lta g e by m esa d e s ig n . - nvE41- 15 °.V
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nvE41-
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ESM5045DV
Abstract: No abstract text available
Text: £Z7 SCS-THOMSON Â im iB ê îiM O E ê S E S M 5 04 5 DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE (2500V RMS . EASY TO MOUNT
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ESM5045DV
ESM5045DV
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Untitled
Abstract: No abstract text available
Text: v a y 7 -f /i Twin Diode Schottky Barrier Diode o u t l in e d i m e n s io n s D4SC6M Case : ITO-220 60V 4A • T jl5 C ÏC T l^yi/x U O i •P rrs m • 7 JlÆ -Jb K ffl & •S R *g •D C /D C H V A -î ? mmm. y - A . o a « ^ •JUS. rn i ï —$’ 7 lb m &
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ITO-220
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