hp11612a
Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑
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5091-4932E
5966-0780E
order50
hp11612a
anzac power divider
HP8565A
HP83595A
HP8565
HP436A
HP8640B
Microwave PIN diode
pin diode microstrip
0805Z473
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LN62S
Abstract: PN120S
Text: Infrared Light Emitting Diodes LN62S GaAs Infrared Light Emitting Diode Unit : mm For optical control systems ø3.0±0.15 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g
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LN62S
PN120S
LN62S
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LN66
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 7.65±0.2 For optical control systems Not soldered ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l
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Panasonic circuit breaker
Abstract: TPS2330 EEUFC1H471L IRF7413 TPS2331 SLVA116
Text: Application Report SLVA116 – May 2002 A FET OR-ing Circuit For Fault-Tolerant Power Systems Ed Jung PMP Systems Power ABSTRACT Fault-tolerant power systems commonly achieve redundancy by diode OR-ing the outputs of several power supply modules. The OR-ing circuit is inefficient if the diode forward
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SLVA116
TPS2331
Panasonic circuit breaker
TPS2330
EEUFC1H471L
IRF7413
SLVA116
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V23134-A1052-X299
Abstract: "Power Relay"
Text: Power relay F4 V23134-A1052-X299 Data sheet change over with bracket and diode in parallel to the coil 3D40HB30.WMF Issued: 2005-11-14, Ed 02 Power relay F4 V23134-A1052-X299 02 max Dimensional drawing m ax Latching tab area max max Flat terminal similar
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V23134-A1052-X299
3D40HB30
volt40
V23134-A1052-X299
"Power Relay"
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fire detector
Abstract: 100HZ 1U20 47PF GL1F201 IS1U20
Text: PREPARED BY: I DATE: SPEC No. ,-. ED-95093 ,. OPTO-ELEtiC @”C DEVICES DW.”. SPECIFICATION / \ DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. GL1F201 \ 1. These specification sheets include the contents under the copyright of Sharp Corporation “Sharp”).
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ED-95093
GL1F201
fire detector
100HZ
1U20
47PF
GL1F201
IS1U20
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GaAs 850 nm Infrared Emitting Diode
Abstract: LN52
Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C
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MGP11
N60ED/D
MGP11N60ED/D
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BUK657-500B
Abstract: et 25 diode
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK657-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FR ED FET with fast recovery
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BUK657-500B
T0220AB
BUK657-500B
et 25 diode
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Untitled
Abstract: No abstract text available
Text: AD VANC ED P o w er Te c h n o lo g y APT2X30D60J 600V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS • Anti-Parallel Diode •Switchmode Power Supply •Inverters • Free Wheeling Diode -Motor Controllers
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APT2X30D60J
OT-227
OT-227
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ca3141e
Abstract: No abstract text available
Text: f ü H A R R CA3141 IS High-Voltage Diode Array For Commercial, Industrial & Military Applications August 1991 Features D escription • M a tch ed M on olithic C o n s tru c tio n - V p for Each D iode Pair M a tch ed to W ithin 0 .5 5 m V Typ at Ip = 1m A
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CA3141
CA3141E
CA3141
16-lead
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Untitled
Abstract: No abstract text available
Text: A d v a n c ed P o w er Tec h n o lo g y • APT2X100D60J 600V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
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APT2X100D60J
OT-227
OT-227
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SLD201V
Abstract: sld201 SLD201U TO50 package noise diode
Text: SLD201U/V SONY. 20mW High Power Laser Diode Description Package O utline SLD201 U /V is a gain-g u id ed h ig h -p o w e r laser diode fabricated by MOCVD. SLD201U U n it: mm trinci 51 OC Features . Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs d ouble-hetero laser diode.
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SLD201
SLD201U
SLD201V
720kHz
30kHz
SLD201U/V
SLD201V
SLD201U
TO50 package
noise diode
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET VISIBLE LASER DIODE NDL3220, NDL3220S 670 nm BAR CODE READER, POINTER APPLICATION AIGalnP M OW VISIBLE LASER DIODE DESCRIPTION N D L3220 is an A IG alnP 670 nm visib le laser d io d e and e s p e cially develop ed fo r B ar Code Reader and
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NDL3220,
NDL3220S
L3220
IEI-1209)
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GL3201
Abstract: GL3201A GL3202 audio signal detector circuit fm detector coil audio rms detector GL320
Text: GL3201A/GL3202 TV SOUND IF AMP Features Pin Configuration • Electronic attenuator replaces conventional volume control.range>60 dB • Differential peak detector requires one single tun ed coil • Internal Zener diode regulated supply • Inherent high stability
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GL3201A/GL3202
GL3201A
GL3202
L3201A/GL3202
GL3201
GL3201A
GL3202
audio signal detector circuit
fm detector coil
audio rms detector
GL320
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Untitled
Abstract: No abstract text available
Text: D e57W GÜQ2mb T3Q A d v a n c ed P o w er Te c h n o l o g y 1 - Cathode 2 - Anode Back of Case - Cathode APT15D100K 1000V 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE I PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply
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APT15D100K
O-220
O-22QAC
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Untitled
Abstract: No abstract text available
Text: an A M P com pany Coaxial Pin Diode Attenuator 700 -1100 MHz MLCT 700D V3.00 Features • • • • • 80dB Dynamic Range High Setting Accuracy TTL Compatible 1 Watt Power Rating Designed for Cellular Applications Description D esig n ed prim arily for com m ercial applications the
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DIODE marking ED
Abstract: marking ya 71A marking GI 536 POWER 15X15 SC802-09 sc802
Text: SC802-09 1 .OA • Outline Drawing SCHOTTKY BARRIER DIODE I Features • • • • Surface mount device Lo w V f Super high speed switching High reliability by planer design -CATHOOE MARKING -SYMBOL I ED 1 14 H Applications - LOT NO.
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SC802-09
500ns,
110oC,
DIODE marking ED
marking ya
71A marking
GI 536 POWER
15X15
SC802-09
sc802
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RK105
Abstract: No abstract text available
Text: Bulletin 127133 rev. D 09/97 International IQ R Rectifier IRK.105 SERIES THYRISTOR/ DIODE and NEW ADD-A-pak Power Modules THYRISTOR/ THYRISTOR Features • Electrically isolated: DBC base plate ■ ■ 3500 VRMg isolating voltage Standard J ED EC package
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ULE78996
RK105
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6bv8
Abstract: diode 12-55 c capacitor RGF general electric RK 1900
Text: 6BV8 ET-T981 Page 1 6BV8 TUBES 12-55 DUPLEX-DIODE TRIODE DESCRIPTION AND RATING T h e 6 B V 8 is a m iniature duplex-diode m ed ium -m u triode in w hich separate cathode an d plate connections are provided for each diode section. T h e tube is intended p rim a rily for service as a com bined syn ch ron ou s detector and
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ET-T981
600-milliampere
6bv8
diode 12-55 c
capacitor RGF
general electric
RK 1900
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DSAIH0002570
Abstract: No abstract text available
Text: B K C INTERNATIONAL Ü3E D | 117^03 □ □ □□ 13 ? _ Type NO.1N140_ G O LD BO N D ED G ER M A N IU M DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135
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1N140_
MIL-S-19500,
DSAIH0002570
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DBA10
Abstract: No abstract text available
Text: IOrdering number:EN64SD D B A 10 Diffused Junction Silicon Diode SAfÊYOI V jJ v Features %<• Package Dimensions * Plastic m olded structure. * Peak reverse v u lta g c iV ^ M '^ ^ to GOOV *Average reclin ed curren l:I q ~I.OA , unit: mm .// 1093 / / / /
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DBA10
DBA10
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Untitled
Abstract: No abstract text available
Text: SC802-09 1 .OA SCHOTTKY BARRIER DIODE I Features • Surface mount device • Outline Drawing ■ Marking • Lo w V f • Super high speed switching - CATHODE MARKING - SYM BOL • High reliability by planer design ■ ,-V L I ED I 14 ■- MONTH
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SC802-09
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PS2002B
Abstract: PS2002 transistor replacement 0z99
Text: NEC PHOTO COUPLER BfCTRON OEVICE PS2002B PHOTO CO U PLER IN D U ST R IA L U SE -N EP O C SERIES - DESCRIPTION The PS2002B is an optically coupled isolator containing a GaAsP light emitting diode and an NPN silicon darlington- connect ed phototransistor.
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PS2002B
PS2002B
-L50-
2500VDC
100ft
100il
Ul/10
PS2002
transistor replacement
0z99
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