hp11612a
Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑
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5091-4932E
5966-0780E
order50
hp11612a
anzac power divider
HP8565A
HP83595A
HP8565
HP436A
HP8640B
Microwave PIN diode
pin diode microstrip
0805Z473
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LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0± 0.15 1.0 0.6 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo
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LN189S
LN189S
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LN189L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0±0.15 1.0 0.6 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol
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LN189L
LN189L
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LN62S
Abstract: PN120S
Text: Infrared Light Emitting Diodes LN62S GaAs Infrared Light Emitting Diode Unit : mm For optical control systems ø3.0±0.15 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g
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LN62S
PN120S
LN62S
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LN66
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 7.65±0.2 For optical control systems Not soldered ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l
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fire detector
Abstract: 100HZ 1U20 47PF GL1F201 IS1U20
Text: PREPARED BY: I DATE: SPEC No. ,-. ED-95093 ,. OPTO-ELEtiC @”C DEVICES DW.”. SPECIFICATION / \ DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. GL1F201 \ 1. These specification sheets include the contents under the copyright of Sharp Corporation “Sharp”).
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ED-95093
GL1F201
fire detector
100HZ
1U20
47PF
GL1F201
IS1U20
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GaAs 850 nm Infrared Emitting Diode
Abstract: LN52
Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur
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V23134-A1052-X299
Abstract: "Power Relay"
Text: Power relay F4 V23134-A1052-X299 Data sheet change over with bracket and diode in parallel to the coil 3D40HB30.WMF Issued: 2005-11-14, Ed 02 Power relay F4 V23134-A1052-X299 02 max Dimensional drawing m ax Latching tab area max max Flat terminal similar
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V23134-A1052-X299
3D40HB30
volt40
V23134-A1052-X299
"Power Relay"
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Untitled
Abstract: No abstract text available
Text: A D VA N C ED PO W ER Te c h n o lo g y 1 - Cathode 2 - Anode Back of Case - Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30 A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT30D100B
APT30D90B
APT30D80B
O-247AD
3000-sso
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SLD201V
Abstract: sld201 SLD201U TO50 package noise diode
Text: SLD201U/V SONY. 20mW High Power Laser Diode Description Package O utline SLD201 U /V is a gain-g u id ed h ig h -p o w e r laser diode fabricated by MOCVD. SLD201U U n it: mm trinci 51 OC Features . Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs d ouble-hetero laser diode.
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SLD201
SLD201U
SLD201V
720kHz
30kHz
SLD201U/V
SLD201V
SLD201U
TO50 package
noise diode
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C
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MGP11
N60ED/D
MGP11N60ED/D
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET VISIBLE LASER DIODE NDL3220, NDL3220S 670 nm BAR CODE READER, POINTER APPLICATION AIGalnP M OW VISIBLE LASER DIODE DESCRIPTION N D L3220 is an A IG alnP 670 nm visib le laser d io d e and e s p e cially develop ed fo r B ar Code Reader and
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NDL3220,
NDL3220S
L3220
IEI-1209)
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zener diode 1N PH 48
Abstract: zener diode 1N PH 44 1X1018 RH4895 1N4915A RH4895A RH939 1N4057 1N4085A 1N4565
Text: D3E d "| bllSflbS OODDö'i'i 4 MICROSEMI CORP 8700 E. Thomas Rd., P.O. Box 1390, Scottsdale, AZ 85252 Microjsemi Corp. ' The diode experts RADIATION HARD EN ED ^TEMPERATURE COM PENSATED SILIC O N ZENER REFERENCE DIO DES fl Phone: 602 941-6300 Fax: (602) 947-1503
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RH821-829,
RH3154-3157A,
RH935-939B,
RH941-944B
RH3501-3504
RH4890-4895A.
AZRH8825
zener diode 1N PH 48
zener diode 1N PH 44
1X1018
RH4895
1N4915A
RH4895A
RH939
1N4057
1N4085A
1N4565
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Untitled
Abstract: No abstract text available
Text: Transmissive Optoswitch VTL23G2B, 23G3B Slotted Switch - Schmitt Output PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches com bines an infrared emitting diode IR ED with a TTL compatible, Schmitt output, photo 1C detector in an opaque plastic case with
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VTL23G2B,
23G3B
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GL3201
Abstract: GL3201A GL3202 audio signal detector circuit fm detector coil audio rms detector GL320
Text: GL3201A/GL3202 TV SOUND IF AMP Features Pin Configuration • Electronic attenuator replaces conventional volume control.range>60 dB • Differential peak detector requires one single tun ed coil • Internal Zener diode regulated supply • Inherent high stability
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GL3201A/GL3202
GL3201A
GL3202
L3201A/GL3202
GL3201
GL3201A
GL3202
audio signal detector circuit
fm detector coil
audio rms detector
GL320
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RK105
Abstract: No abstract text available
Text: Bulletin 127133 rev. D 09/97 International IQ R Rectifier IRK.105 SERIES THYRISTOR/ DIODE and NEW ADD-A-pak Power Modules THYRISTOR/ THYRISTOR Features • Electrically isolated: DBC base plate ■ ■ 3500 VRMg isolating voltage Standard J ED EC package
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ULE78996
RK105
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hb5-132
Abstract: S370 S370 UDT
Text: VISIB LE LIG HT PRODUCTS Light Emitting Diode REV:B DATE:2005/4/26 iDEVICE NO:HB5-132 (H i-R ed ) iLE N S COLOR: V colored diffusion white diffusion colored transparent water clear iPACKAGE DIMENSIONS: NOTE: 1 .All dimensions are In millimeter. 2 .Lead spacing In measured where the
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HB5-132
hb5-132
S370
S370 UDT
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Untitled
Abstract: No abstract text available
Text: eVERJLIGHT EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 m m R ound L ED ,T -1 3/4 7343-2UBGC/MB Features • Popular T -l 3/4 diameter package. • Choice o f various viewing angles. • Available on tape and reel. • Reliable and robust.
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7343-2UBGC/MB
B91010370
R19103039
DLE-734-018
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Untitled
Abstract: No abstract text available
Text: eVERJLIGHT EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 m m R ound L ED ,T -1 3/4 7343-2SURC/S406 Features • Popular T-l 3/4 diameter package. • Choice of various viewing angles. • Available on tape and reel. • Reliable and robust.
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7343-2SURC/S406
B91010216
R19102030
DLE-734-016
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rover
Abstract: J1000
Text: SPEb^fo. / ED-Q2Û78 , x . ISSUE Maiçh;i8,20Q2 SHARP OPTOELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. G L 100M N 0M P1M Specified for Enclosed please find copies of the Specifications which consists of 14 pages including cover.
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ED-Q2078
GL100MN0MP1M
GL100MN0MP1M
rover
J1000
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Untitled
Abstract: No abstract text available
Text: eVERJLIGHT EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 m m R ound L ED ,T -1 3/4 7343-2UBGC/C505 Features • Popular T-l 3/4 diameter package. • Choice of various viewing angles. • Available on tape and reel. • Reliable and robust.
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7343-2UBGC/C505
DLE-734-015
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ip olivetti cd
Abstract: GL100MD1MP1 GL100MD1
Text: SPEC. No. ED-02157 ISSUE June 21,2002 SH A R P OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION i " DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. Specified for GL100MD1MP1 Olivetti Enclosed please find copies o f the Specifications which consists o f 14 pages including cover.
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ED-02157
GL100MD1MP1
ip olivetti cd
GL100MD1
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DSAIH0002570
Abstract: No abstract text available
Text: B K C INTERNATIONAL Ü3E D | 117^03 □ □ □□ 13 ? _ Type NO.1N140_ G O LD BO N D ED G ER M A N IU M DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135
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1N140_
MIL-S-19500,
DSAIH0002570
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EP 613 power supply
Abstract: No abstract text available
Text: P R O D U C T IN F O R M A T IO N 850nm 8C478 PIN/Preamp T his is a fu lly m o n o lith ic G aA s device which contains a PIN photo diode, a low noise transimpedance amplifier and a differential limiting am plifier. It is d esign ed for Fibre Channel and G igabit Ethernet. Its
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850nm
8C478
8C478
1-800-96M
EP 613 power supply
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