714 diode varicap
Abstract: hitachi diode Hitachi Zener diodes 1SS106 04BZ Hitachi diodes using a zener diode as a varicap 05AZ HRC0203A GENERAL PURPOSE UHF MW MIXER DIODE
Text: DIODE Hitachi Diode Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI DIODE 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-005E
714 diode varicap
hitachi diode
Hitachi Zener diodes
1SS106
04BZ
Hitachi diodes
using a zener diode as a varicap
05AZ
HRC0203A
GENERAL PURPOSE UHF MW MIXER DIODE
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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Untitled
Abstract: No abstract text available
Text: HSU119 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0190-0200 Rev.2.00 Feb 04, 2009 Features • • • • Low capacitance. C = 2.0 pF max Short reverse recovery time. (trr =3.0 ns max) Lineup of environmental friendly Halogen free type (HSU119-N)
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HSU119
REJ03G0190-0200
HSU119-N)
HSU119TRF
HSU119-NTRF
PTSP0002ZA-A
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HSU119TRF
Abstract: HSU119-NTRF HSU119 PTSP0002ZA-A diode hsu119
Text: HSU119 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0190-0200 Rev.2.00 Feb 04, 2009 Features • • • • Low capacitance. C = 2.0 pF max Short reverse recovery time. (trr =3.0 ns max) Lineup of environmental friendly Halogen free type (HSU119-N)
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HSU119
REJ03G0190-0200
HSU119-N)
HSU119TRF
HSU119-NTRF
PTSP0002ZA-A
REJ03G0190-0200
HSU119TRF
HSU119-NTRF
HSU119
PTSP0002ZA-A
diode hsu119
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Hitachi DSA002789
Abstract: No abstract text available
Text: HSU119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-444 Z Rev 0 Features • Low capacitance. (C = 2.0pF max) • Short reverse recovery time. (trr = 3.0ns max) • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed
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HSU119
ADE-208-444
HSU119
Hitachi DSA002789
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Untitled
Abstract: No abstract text available
Text: HSU119 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0190-0200 Rev.2.00 Feb 04, 2009 Features • • • • Low capacitance. C = 2.0 pF max Short reverse recovery time. (trr =3.0 ns max) Lineup of environmental friendly Halogen free type (HSU119-N)
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HSU119
REJ03G0190-0200
HSU119-N)
HSU119TRF
HSU119-NTRF
PTSP0002ZA-A
REJ03G0190-0200
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Hitachi DSA002712
Abstract: No abstract text available
Text: HSU119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-444 Z Rev 0 Features • Low capacitance. (C = 2.0pF max) • Short reverse recovery time. (trr = 3.0ns max) • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed
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HSU119
ADE-208-444
HSU119
Hitachi DSA002712
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Untitled
Abstract: No abstract text available
Text: HSU119 Spice parameter * Model generated on Oct 2, 96 * MODEL FORMAT: SPICE3, PSPICE apply. * UCB DIODE Model .MODEL HSU119 D +IS=4.369286E-9 +BV=80 +VJ=0.6795491 +KF=0 +XTI=3 +TT=7.0E-9 +RS=0.6319732 +IBV=1.515582E-8 +M=0.0399288 +AF=1 +EG=1.17 +N=1.8634384
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HSU119
369286E-9
515582E-8
729518E-13
HSU119
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HSU119
Abstract: DSA003642
Text: HSU119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-444 Z Rev. 0 Feb. 1997 Features • Low capacitance. (C = 2.0pF max) • Short reverse recovery time. (trr = 3.0ns max) • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed
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HSU119
ADE-208-444
HSU119
DSA003642
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Hitachi DSA00773
Abstract: HSU119
Text: HSU119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-444 Z Rev 0 March 1996 Features • • • Low capacitance. (C=2.0pF max) Short reverse recovery time. (trr =3.0ns max) Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
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HSU119
ADE-208-444
Hitachi DSA00773
HSU119
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HSU119
Abstract: No abstract text available
Text: HSU119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-444 Z Rev 0 Feb. 1997 Features • Low capacitance. (C = 2.0pF max) • Short reverse recovery time. (trr = 3.0ns max) • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
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HSU119
ADE-208-444
HSU119
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HSU119
Abstract: No abstract text available
Text: HSU119 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0190-0100Z Previous: ADE-208-444 Rev.1.00 Mar.22.2004 Features • Low capacitance. (C = 2.0 pF max) • Short reverse recovery time. (trr =3.0 ns max) • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.
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HSU119
REJ03G0190-0100Z
ADE-208-444)
HSU119
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
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R07CS0003EJ0100
RJP63k2
rjp63f3
rjp30e2
RJP30H2
RJJ0319DSP
rjp63f
RJP30H3
rjj0319
BCR1AM-12A equivalent
RJJ0606
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rjp6065
Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance
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marking code V6 33 surface mount diode
Abstract: philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379
Text: 2004.4 Renesas Diodes Status List Topic—Low-voltage Variable Capacitance Diode Series •············2 Index ·····························································································3
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ADE-508-010A
ADE-508-016
ADE-508-017
HVL355B
HVL358B
HVL368B
HVL375B
HVL385B
marking code V6 33 surface mount diode
philips surface mount zener diode v6
zener diode application
IPS302
04BZ
1w402
DIODE marking S4 59A
marking 513 SOD-323
MARKING 621 SOD-323
1w379
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MESFET Application
Abstract: hitachi mosfet power amplifier audio application 2sk2685 spice 00E-12 hitachi mosfet audio application note Hitachi audio mosfet application booster gsm antenna hitachi discrete circuit diagram wireless video transmitter and re 2SK239A
Text: C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION:
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49E-13
00E-01
00E-06
44E-13
HVC133
30E-12
27E-15
HVM132WK
MESFET Application
hitachi mosfet power amplifier audio application
2sk2685 spice
00E-12
hitachi mosfet audio application note
Hitachi audio mosfet application
booster gsm antenna
hitachi discrete
circuit diagram wireless video transmitter and re
2SK239A
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r61505
Abstract: R63400 R61506 R61504 R61501 NS953 Niigata Seimitsu ns953 ic data r61503 Niigata Seimitsu 04BZ
Text: Rev.19.00 2007.10.31 Renesas Diodes General Presentation www.renesas.com Renesas Diodes General Presentation October 2007 Standard Product Business Group 10/31/2007 Rev.19.00 2007. Renesas Technology Corp., All rights reserved. Notes regarding these materials
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REJ13G0001-1900
r61505
R63400
R61506
R61504
R61501
NS953 Niigata Seimitsu
ns953 ic data
r61503
Niigata Seimitsu
04BZ
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D1FM3
Abstract: Shindengen Electric Mfg. HSU119 HZM11N HZM15N M1FL20U MD3221N SSOP32 U100 THY20
Text: CAT. No. U100 -1 Synchronous Rectification DC-DC Converter Power IC MD3221N Application Manual SHINDENGEN ELECTRIC MFG. CO., LTD. ↓Click! 1 Using the MD3221N DC to DC Converter Power IC Thank you for purchasing the MD3221N DC to DC Converter Power IC. This manual contains important
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MD3221N
MD3221N
MD3221N.
D1FM3
Shindengen Electric Mfg.
HSU119
HZM11N
HZM15N
M1FL20U
SSOP32
U100
THY20
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diode cross reference 1s1555
Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Text: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,
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DO-35
1S1555,
1S1588
1SS104
1S1553,
1S1554
1S953
MA161
1S1586,
1S1587
diode cross reference 1s1555
diode cross reference 1s2473
IPS302
1SS211
1S2473 DIODE equivalent
1S2473 DIODE
toshiba diode do-41
1s1555 diode
1ss202
1SS153
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2SJ1334
Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
Text: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
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HA16142P/FP
ADE-504-006
DO-35
DO-41
HA16142P/FP
2SJ1334
2SK3235
HSK81
Hitachi DSAUTAZ006
HA16141
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Untitled
Abstract: No abstract text available
Text: HSU119 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI ADE-208-444 Z Rev 0 March 1996 Features * Low capacitance. (C=2.0pF max) * Short reverse recovery time, (trr =3,0ns max) * Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
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OCR Scan
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HSU119
ADE-208-444
HSU119
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Untitled
Abstract: No abstract text available
Text: HSU119 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI ADE-208-444 Z Rev 0 Features • Low capacitance. (C = 2.0pF max) • Short reverse recovery time. (trr = 3.0ns max) • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed
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HSU119
ADE-208-444
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iss86
Abstract: 1SS119
Text: DIODE SERIES •î i t | ' > a 7 K Schottky barrier diodes for detectors & mixers Ratings Application Package Code DO-35 Detector switching Type No. isstoe 1SS108 1SS196 10 30 max 4.5 30 15 30 3 4.5 1.0 15 3 35 ‘ 35 ‘ 30 15 15 30 15 [0.6] [0.7] 1.0 [10]
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DO-35
1SS108
1SS196
1SS199
DO-35
1SS82
1SS83
HSS81
HSS82
HSS83
iss86
1SS119
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