1842m
Abstract: DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P
Text: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser
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200mA
400mA
Aug-05
29-Sep-09
LDD200P-00400-A
1842m
DIODE 4d
LDD400-1P
ldd200
2i125
LDD200-2P
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DIODE 4d
Abstract: LDD200-1P ldd200 LDD400-1P LDDCAB-50 LDD200-2P DIODE 1N4001 LDD200P-00400 LDD400-3P DD200-1P
Text: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser
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200mA
400mA
Aug-05
29-Sep-09
LDD200P-00400-A
DIODE 4d
LDD200-1P
ldd200
LDD400-1P
LDDCAB-50
LDD200-2P
DIODE 1N4001
LDD200P-00400
LDD400-3P
DD200-1P
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AD502
Abstract: No abstract text available
Text: PIN DIODE MODULES PIN diode attenuators PIN DIODE ATTENUATORS Features PIN diode attenuators are primarily used in applications where control power level is needed i.e. in system like AGC (Automatic Gain Control . These attenuators are current-controlled and can be proposed in a wide
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10GHz
AD502:
AD502
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ovkd 01
Abstract: diode ovkd01 diode in 400
Text: Transmitting and Receiving Elements Receiving element SFH 203 P Fig.: SFH 203 P in diode socket LSTDL Type Description Fig.: SFH 203 P in diode socket LWMDL Fig.: SFH 203 P in diode socket OVKD 01 SFH 203 P PIN photo diode SFH 203 P is a planar silicon diode with a high cut-off frequency mounted
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Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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6098-0126
Abstract: 6098-0 diode c02 D0D82345-32010D D0D82345-20060C MT Series 6098-0061 6098-0022 6098-0017 6098-0129
Text: MT SERIES 090/WITH BUILT-IN DIODE Small connector incorporating large capacity diode of high reliability and excellent heat radiation for the applications C-10 requiring rectifying function. Structure Diode Connector M Connector F Housing F Connector M with built-in chip diode
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090/WITH
D0D82345-32010D
6098-0126
6098-0
diode c02
D0D82345-20060C
MT Series
6098-0061
6098-0022
6098-0017
6098-0129
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BAS70-07S
Abstract: BAS70-08S
Text: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF
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BAS70-07S
BAS70-08S
OT323-6L
BAS70-08S
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marking D33
Abstract: BAS70-07S BAS70-08S
Text: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF
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BAS70-07S
BAS70-08S
OT323-6L
BAS70-08S
marking D33
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Untitled
Abstract: No abstract text available
Text: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF
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BAS70-07S
BAS70-08S
OT323-6L
BAS70-08S
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MMAD1109
Abstract: MMAD130 MMAD1103 MMAD1105 MMAD1107
Text: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD130/D
MMAD130/D
MMAD1109
MMAD130
MMAD1103
MMAD1105
MMAD1107
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sod 106
Abstract: BAR63J sod-323 diode MARKING CODE 4
Text: BAR63J PIN DIODE FEATURES AND BENEFITS • ■ ■ Pin diode for high speed switching of RF signal Low forward voltage Very low capacitance DESCRIPTION A Single pin diode in SOD-323 package. This diode is intended to be used in mobile phone to switch the RF signal.
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BAR63J
OD-323
OD-323
sod 106
BAR63J
sod-323 diode MARKING CODE 4
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BAR63J
Abstract: MARKING 35 marking hz SOD-323 STMicroelectronics DIODE marking code LE sod-323 diode MARKING CODE 4 MARKING D SOD-323 4500g
Text: BAR63J PIN DIODE FEATURES AND BENEFITS Pin diode for high speed switching of RF signal Low forward voltage Very low capacitance • ■ ■ DESCRIPTION A Single pin diode in SOD-323 package. This diode is intended to be used in mobile phone to switch the RF signal.
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BAR63J
OD-323
OD-323
BAR63J
MARKING 35
marking hz SOD-323
STMicroelectronics DIODE marking code LE
sod-323 diode MARKING CODE 4
MARKING D SOD-323
4500g
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kostal
Abstract: TSKS5412X01ASZ TEKS5412 TEKS5412X01 TSKS5412X01
Text: TSKS5412X01 GaAs Infrared Emitting Diode in Side View Package Description TSKS5412 is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case. The diode is case compatible to the
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TSKS5412X01
TSKS5412
TEKS5412
TEKS5412
D-74025
15-Oct-98
kostal
TSKS5412X01ASZ
TEKS5412X01
TSKS5412X01
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR PG2.8CUS23 TECHNICAL DATA Low Voltage EPD TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES E B L L EPD Enhanced Punch-Through Diode Structure. D 400 Watts peak pulse power (tp=8/20 s)
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8CUS23
5/50ns)
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marking hz SOD-323
Abstract: diode sod 106 BAR63J BAS70-07 SOD Package
Text: BAR63J PIN DIODE FEATURES AND BENEFITS n n n Pin diode for high speed switching of RF signal Low forward voltage Very low capacitance A 35 K DESCRIPTION Single pin diode in SOD-323 package. This diode is intended to be used in mobile phone to switch the RF signal.
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BAR63J
OD-323
OD-323
marking hz SOD-323
diode sod 106
BAR63J
BAS70-07
SOD Package
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MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
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Untitled
Abstract: No abstract text available
Text: SDS20WM SWITCHING DIODE High Voltage Switching Diode General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23 surface mounted device SMD packages. Features and Benefits Silicon epitaxial planar diode
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SDS20WM
OT-23
OT-23
25-AUG-10
KSD-D5C035-001
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MMAD1108
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8-Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching
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MMAD1108
MMAD1108
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ad130
Abstract: D1103 d1105 MMAD1109 AD1107
Text: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching
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MMAD130/D
AD1105
AD1107
ad130
D1103
d1105
MMAD1109
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Scans-0017402
Abstract: general electric bulb thermometer pf 9sg
Text: — PRODUCT INFORMATION — Page 1 Diode TUBES FOR TV DAMPING DIODE APPLICATIONS LOW TUBE DROP COLOR TV TYPE 6,500 VOLTS DC AND PEAK 400 MILLIAMPERES DC The 34DK3 is a heater-cathode type diode intended for service as the damping diode in the horizontal—deflection
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34DK3
K-55611-TD378-1
Scans-0017402
general electric
bulb thermometer
pf 9sg
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SM2F
Abstract: M2480 BR216
Text: BR216 _ DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the T0-220AB outline. Each half o f the device conducts normally in one direction, but in the other direction it acts as a breakover diode.
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BR216
BR216
T0-220AB
M3231
SM2F
M2480
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AD130
Abstract: D1107 AD1105
Text: M OTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode A rray s Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching
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MMAD130/D
0EH0b32
AD130
D1107
AD1105
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MMAD1107
Abstract: mmad1103 MMAD1105 MMAD1109 Ad1103
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-sw itching core-driver applications. These arrays offer many of the advantages of integrated
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MMAD130
MAD1105
MMAD1107
mmad1103
MMAD1105
MMAD1109
Ad1103
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Scans-0017327
Abstract: general electric IRCON INFRARED
Text: -P R O D U C T INFORMATION — Page 1 E L E C T R O N IC Diode INNOVATIONS\ t IN A C T I O N i ~r ß TUBES FOR TV DAMPING DIODE APPLICATIONS COLOR TV TYPE LOW TUBE DROP 6,500 VOLTS DC AND PEAK 400 MILLIAMPERES DC The 19DK3 is a heater—cathode type diode intended for service as the damping diode in the horizontal-deflection
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19DK3
687-inch
Heate500
K-55611-TD378-1
Scans-0017327
general electric
IRCON INFRARED
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