Untitled
Abstract: No abstract text available
Text: AMS-173-4 Product Selection Guide HIGH-VOLTAGE ≥60 V PERIPHERAL POWER AND DISPLAY DRIVERS IN ORDER OF 1) OUTPUT VOLTAGE, 2) OUTPUT CURRENT, 3) NUMBER OF DRIVERS Output Ratings* Serial Input Latched Drivers Features Diode Saturated Internal Clamp Outputs Protection
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AMS-173-4
5810-F
5812-F
5818-F
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5810-F
Abstract: 5812-F 5818-F
Text: AMS-173-4 Product Selection Guide HIGH-VOLTAGE ≥60 V PERIPHERAL POWER AND DISPLAY DRIVERS IN ORDER OF 1) OUTPUT VOLTAGE, 2) OUTPUT CURRENT, 3) NUMBER OF DRIVERS Output Ratings* Serial Input Latched Drivers Features Diode Saturated Internal Clamp Outputs Protection
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AMS-173-4
5810-F
5812-F
5818-F
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6275
Abstract: 6A259 6A595 6B259 6B273 6B595 diode IN 5822 DIODE 7042
Text: AMS-173-2 Product Selection Guide POWER SINK DRIVERS IN ORDER OF 1 OUTPUT CURRENT, 2) OUTPUT VOLTAGE, 3) NUMBER OF DRIVERS Output Ratings * mA V # Serial Input Latched Drivers Features Diode Clamp Outputs Internal Protection Part Number 75 † 17 8 X X –
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AMS-173-2
6B259
6B273
6B595
6275
6A259
6A595
6B259
6B273
6B595
diode IN 5822
DIODE 7042
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Untitled
Abstract: No abstract text available
Text: AMS-173-2 Product Selection Guide POWER SINK DRIVERS IN ORDER OF 1 OUTPUT CURRENT, 2) OUTPUT VOLTAGE, 3) NUMBER OF DRIVERS Output Ratings * mA V # Serial Input Latched Drivers Features Diode Clamp Outputs Internal Protection Part Number 75 † 17 8 X X —
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AMS-173-2
6B259
6B273
6B595
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Untitled
Abstract: No abstract text available
Text: AMS-173-2 Product Selection Guide POWER SINK DRIVERS IN ORDER OF 1 OUTPUT CURRENT, 2) OUTPUT VOLTAGE, 3) NUMBER OF DRIVERS Features Serial Latched Diode Saturated Internal † mA V # Input Drivers Clamp Outputs Protection Part Number 75 17 8 X X – constant current
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AMS-173-2
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ASML-5822
Abstract: S11 SCHOTTKY diode marking code f6 DIODE ASML-5822-TR1 PIN DIODE MARKING CODE AB diode IN 5822 AV02-1691EN SC70-6 avago marking -20 F6 SCHOTTKY DIODE
Text: ASML-5822 Schottky Assisted Low Power PIN Diode Limiter Data Sheet Description Features The ASML-5822 is specifically designed for low power limiter applications, where it can be used to protect the receiver system from being damaged by large input signals, and allow the receiver system to function normally
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ASML-5822
ASML-5822
900MHz)
OT-323
SC70-3
OT-363
SC70-6
AV02-1691EN
S11 SCHOTTKY diode
marking code f6 DIODE
ASML-5822-TR1
PIN DIODE MARKING CODE AB
diode IN 5822
avago marking -20
F6 SCHOTTKY DIODE
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3B75
Abstract: No abstract text available
Text: 1N 5820.1N 5822 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Schottky barrier rectifiers diodes 1N 5820.1N 5822 Forward Current: 3 A
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Untitled
Abstract: No abstract text available
Text: 1N 5820.1N 5822 *0 Axial lead diode Schottky barrier rectifiers diodes 1N 5820.1N 5822 Forward Current: 3 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$'
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IN 5822
Abstract: diode IN 5822
Text: 1N 5820.1N 5822 *0 Axial lead diode Schottky barrier rectifiers diodes 1N 5820.1N 5822 Forward Current: 3 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$'
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diode IN 5822
Abstract: diode 1N 5822 5822 schottky 1N
Text: 1N 5820.1N 5822 *0 Axial lead diode Schottky barrier rectifiers diodes 1N 5820.1N 5822 Forward Current: 3 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$'
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Untitled
Abstract: No abstract text available
Text: 1N 5820.1N 5822 *0 Axial lead diode Schottky barrier rectifiers diodes 1N 5820.1N 5822 Forward Current: 3 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$'
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2SD 4206
Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
AMS-127B
2SD 4206
str 5707
ky 201 thyristor
scr ky 202
2SD 4206 npn
gi 9444 diode
TRANSISTOR SMD 9014
2SD 5703
STR 6757
TRANSISTOR SMD DK QC
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TRANSISTOR SMD 613
Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
AMS-127B
TRANSISTOR SMD 613
TRANSISTOR SMD DK QC
transistor SMD DK -RN
Sanken Schottky Diode Mi 15
spx 3955
SANKEN power supply
diode zener smd sg 64
transistor SMD DK qs
301 miniature smd transistor
KY smd transistor
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sourcing darlington array
Abstract: ULN7003A ULN7003LW darlington array ULN7003
Text: Data Sheet 29304.10A 7003 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAY 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Integrating seven high-voltage, high-current npn Darlingtons into a monolithic power array, the ULN7003A AND ULN7003LW are designed for interfacing between TTL or CMOS logic and a variety of
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ULN7003A
ULN7003LW
ULN7003A/LW
compatib-350
sourcing darlington array
darlington array
ULN7003
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A2540SLB
Abstract: L6221A L6221CD UDN2540B 8 output decoder relay driver
Text: Data Sheet 29317D 2540 QUAD DARLINGTON POWER DRIVER UDN2540B DIP OUT4 1 16 IN 4 K 2 15 IN3 OUT3 3 14 ENABLE GROUND 4 13 GROUND GROUND 5 12 GROUND OUT2 6 11 V CC K 7 10 IN 2 OUT1 8 9 IN 1 Dwg. PP-017-2 Combining AND logic gates and inverting high-current bipolar
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29317D
UDN2540B
UDN2540B
A2540SLB
L6221A
L6221CD
8 output decoder relay driver
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Solenoid Driver Darlington
Abstract: 29317C A2540SLB L6221A L6221CD UDN2540B BATWING
Text: Data Sheet 29317C* 2540 QUAD DARLINGTON POWER DRIVER UDN2540B OUT4 1 16 IN 4 K 2 15 IN3 OUT3 3 14 ENABLE GROUND 4 13 GROUND GROUND 5 12 GROUND OUT2 6 11 V CC K 7 10 IN 2 OUT1 8 9 IN 1 Dwg. PP-017-2 Combining AND logic gates and inverting high-current bipolar
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29317C*
UDN2540B
UDN2540B
A2540SLB
Solenoid Driver Darlington
29317C
L6221A
L6221CD
BATWING
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GP 015 DIODE
Abstract: ULN7003A ULN7003LW
Text: Data Sheet 29304.10A 7003 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAY 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Integrating seven high-voltage, high-current npn Darlingtons into a monolithic power array, the ULN7003A AND ULN7003LW are designed for interfacing between TTL or CMOS logic and a variety of
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ULN7003A
ULN7003LW
ULN7003A/LW
GP 015 DIODE
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RG4 DIODE
Abstract: 1N5821 MCB843 b35 DIODE schottky marking JB SCHOTTKY BARRIER DIODE 1N5820 1N5822 IEC134 MCB841
Text: SbE D • 7 1 1 D fi2 b r ilill J 9 UC1IHWVIIUUVIVI9 O lim c m i 7 T T ■ P H IN 11 T Controlled avalanche Schottky barrier diodes P H I L I P S IN T E R N A T IO N A L D E S C R IP T IO N Schottky barrier diodes in herm etically se aled S O D 8 4 A Implosion Diode ID ) envelope,
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1N5820ID/21ID/22ID
OD84A
1N5820
1N5821
1N5822
711002b
RG4 DIODE
MCB843
b35 DIODE schottky
marking JB SCHOTTKY BARRIER DIODE
IEC134
MCB841
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1NS820
Abstract: No abstract text available
Text: 1N5820 1N5821 1N5822 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1NS820 and 1N5822 are Designer’s Data Sheet Motorola Preferred Devices A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide
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1N5820
1N5821
1N5822
1NS820
1N5822
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1N5B22
Abstract: lm 5821 IN5822
Text: 1N5820 MBR320P 1N5821 MBR330P 1N5822 MBR340P M M O T O R O L A I) ij s iy ; n ( * r ^ D a t a S h e p i S C H O T T K Y B A R R IE R A X I A L LE A D R E C T IF IE R S . . e m p lo yin g power diode. oxid e in The S c h o t t k y B arrier S tate-of-the-art
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1N5820
MBR320P
1N5821
MBR330P
1N5822
MBR340P
1N5B22
lm 5821
IN5822
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in5822
Abstract: IN5821
Text: SB 3 2 0 .SB 3100, IN 5820.IN 5822 Si-Schottkv-Gleichrichter Si-Schottkv-Rectifier 3A Nominal current Nennstrom 20. 100 V Repetitive peak reverse voltage Periodische Spitzensperrspannung - DO-201 Plastic case Kunststoffgehäuse Weight approx. Gewicht ca.
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DO-201
UL94V-0
R0D1RS14
000017S
in5822
IN5821
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Untitled
Abstract: No abstract text available
Text: QUAD DARLINGTON POWER DRIVER UDN2540B 16 in 4 15 in 3 14 ENABLE 13 GROUND 12 GROUND Dwg. PP-017-2 Combining AND logic gates and inverting high-current bipolar outputs, the UDN2540B and A2540SLB quad Darlington power drivers provide interface between low-level signal-processing circuits and
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UDN2540B
PP-017-2
UDN2540B
A2540SLB
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TA7378
Abstract: TA7378P 016U
Text: TOSHIBA-. ELECTRONIC Da 9097247 TOSHIBA. DE | ^□^7247 0D172ûfl M | ELECTRONIC T - 1 7 - 0 S - O 5 FM FRONT END IC The TA7378P is low operation voltage FM FRONT END IC for the portable equipments which are suitable for the headphone stereo radios and radio cassette
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0D172Ã
TA7378P
796kHz
455kHz
YT-20580
157-2239-213A
S193-006
S193-008
TA7378
016U
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transformer calculation IRON CORE
Abstract: Flyback SANYO RL-5050 inductor 100uH 3A 4n35 optoisolator H1000 INDUCTOR RL5053 n5822 RL5029
Text: Application Hint 13 A Design Guide for the New BiCMOS LM2575 Family IJÉ*". iiSsíí1!!!. J i P 1^ 'u^S\ I.^WWW|P""»| by G e o rg e Hall an d B ren da K ovacevic Introduction BiCM OS technology has given the classic LM2575 switcher many added benefits. Faster rise/fall times, faster response
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LM2575
RL5065
RL5066
RL5067
RL5068
RL5069
RL5070
RLS-1500-20
RLS-1500-48
transformer calculation IRON CORE
Flyback SANYO
RL-5050
inductor 100uH 3A
4n35 optoisolator
H1000 INDUCTOR
RL5053
n5822
RL5029
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