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    DIODE IR30 Search Results

    DIODE IR30 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE IR30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D45H11 equivalent replacement

    Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS


    Original     		PDF MJ10009 Volt32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D45H11 equivalent replacement 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100

    BU108

    Abstract: BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *Motorola Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS


    Original     		PDF MJ10007 Curr32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60

    MJ3001 equivalent

    Abstract: bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10005*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS


    Original     		PDF MJ10005 MJ10005* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ3001 equivalent bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31

    2sC144

    Abstract: lc 3101 ST BDW83C BUX98A BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for


    Original     		PDF MJE18604D2 MJE18604D2 Spr32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2sC144 lc 3101 ST BDW83C BUX98A BU326 BU108 BU100

    motorola 415 D2PAK

    Abstract: 2N3055 transistor cross reference BU108 2N5686 726 MOTOROLA TRANSISTORS 2sc15 DIODE 2N4002 transistor 2SC1061 transistor bdx54c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL44D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network


    Original     		PDF BUL44D2 BUL44D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C motorola 415 D2PAK 2N3055 transistor cross reference BU108 2N5686 726 MOTOROLA TRANSISTORS 2sc15 DIODE 2N4002 transistor 2SC1061 transistor bdx54c

    2SC1943

    Abstract: bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network


    Original     		PDF MJE18004D2 MJE18004D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SC1943 bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007

    pin configuration transistor bd140

    Abstract: TRANSISTOR REPLACEMENT GUIDE BU108 Drive IC 2SC3346 Replacement MOTOROLA BDX54 2sA671 transistor BU326 BU100 transistor NSD134
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network


    Original     		PDF BUL45D2 BUL45D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C pin configuration transistor bd140 TRANSISTOR REPLACEMENT GUIDE BU108 Drive IC 2SC3346 Replacement MOTOROLA BDX54 2sA671 transistor BU326 BU100 transistor NSD134

    19tq15

    Abstract: 42ctq30 IR42CTQ30 47CTQ20 IR42CTQ20 30L20 30L30 40L15 ir19 IR40L15
    Text: Efficiency in SMPS Output Stage December 30th, 1999 Alberto Guerra & Francesco Vallone Department of Input/Output Rectifier International Rectifier, 1521 Grand, El Segundo 90245, California, U.S.A. Abstract. By means of the SPICE Schottky diode model, developed recently by International


    Original     		PDF

    mj10016

    Abstract: 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,


    Original     		PDF MJ10015 MJ10016 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent

    MJ2955 replacement

    Abstract: diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT33  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS The BUT33 Darlington transistor is designed for high–voltage, high–speed, power


    Original     		PDF BUT33 BUT33 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJ2955 replacement diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P

    BUT34 equivalent

    Abstract: BU323A equivalent 2N3055 BU108 2SA1046 BUV22 equivalent TIP34C equivalent bc 574 transistor BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT34  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS The BUT34 Darlington transistor is designed for high–voltage, high–speed, power


    Original     		PDF BUT34 BUT34 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUT34 equivalent BU323A equivalent 2N3055 BU108 2SA1046 BUV22 equivalent TIP34C equivalent bc 574 transistor BU326 BU100

    CASE 221A Style 1

    Abstract: BU108 BD907 equivalent Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 2N555 BU326 BU100 MJE520 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage,


    Original     		PDF MJ10020 MJ10021 MJ10021 Performa32 TIP73B TIP74 TIP74A TIP74B TIP75 CASE 221A Style 1 BU108 BD907 equivalent Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 2N555 BU326 BU100 MJE520 equivalent

    BU108

    Abstract: D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design


    Original     		PDF MJE18002D2 MJE18002D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100

    transistor bc 647

    Abstract: 380 darlington to3 ibm motorola 415 D2PAK 726 MOTOROLA TRANSISTORS 3427 motorola transistor 2N6547 DIODE 2N4002 2N5886 Structure BU326 BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The BUD44D2 is state–of–art High Speed High gain BIPolar transistor H2BIP .


    Original     		PDF BUD44D2 BUD44D2 Fully32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B transistor bc 647 380 darlington to3 ibm motorola 415 D2PAK 726 MOTOROLA TRANSISTORS 3427 motorola transistor 2N6547 DIODE 2N4002 2N5886 Structure BU326 BU108

    diagram of an interleaved multiphase buck converter is shown in Figure 13

    Abstract: No abstract text available
    Text: IR3086 PRELIMINARY DATA SHEET XPHASETM PHASE IC WITH OVP, FAULT AND OVERTEMP DETECT DESCRIPTION The IR3086 Phase IC combined with an IR XPhaseTM Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides


    Original     		PDF IR3086 IR3086 IR3081/3086 EVRD10 400mV 32oC/W, diagram of an interleaved multiphase buck converter is shown in Figure 13

    IR3081

    Abstract: IR3086 IR3088 3 phase pwm signal generator ic
    Text: IR3086 PRELIMINARY DATA SHEET XPHASETM PHASE IC WITH OVP, FAULT AND OVERTEMP DETECT DESCRIPTION The IR3086 Phase IC combined with an IR XPhaseTM Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides


    Original     		PDF IR3086 IR3086 IR3081/3086 EVRD10 32oC/W, IR3081 IR3088 3 phase pwm signal generator ic

    IR3081

    Abstract: IR3088 IR3088M IR3088MTR 3 phase pwm signal generator ic
    Text: IR3088 DATA SHEET XPHASETM PHASE IC WITH FAULT AND OVERTEMP DETECT DESCRIPTION The IR3088 Phase IC combined with an IR XPhaseTM Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides


    Original     		PDF IR3088 IR3088 32oC/W, IR3081 IR3088M IR3088MTR 3 phase pwm signal generator ic

    Untitled

    Abstract: No abstract text available
    Text: IR3088 DATA SHEET XPHASETM PHASE IC WITH FAULT AND OVERTEMP DETECT DESCRIPTION The IR3088 Phase IC combined with an IR XPhaseTM Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides


    Original     		PDF IR3088 IR3088 32oC/W,

    3 phase pwm signal generator ic

    Abstract: IR3081 IR3088 IR3088A IR3088AMTR 10PA X-PHASE
    Text: IR3088A DATA SHEET XPHASETM PHASE IC WITH FAULT AND OVERTEMP DETECT DESCRIPTION TM The IR3088A Phase IC combined with an IR XPhase Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides


    Original     		PDF IR3088A IR3088A 3 phase pwm signal generator ic IR3081 IR3088 IR3088AMTR 10PA X-PHASE

    IR3081

    Abstract: IR3086 IR3086M IR3086MTR IR3088
    Text: IR3086 PRELIMINARY DATA SHEET XPHASETM PHASE IC WITH OVP, FAULT AND OVERTEMP DETECT DESCRIPTION The IR3086 Phase IC combined with an IR XPhaseTM Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides


    Original     		PDF IR3086 IR3086 32oC/W, IR3081 IR3086M IR3086MTR IR3088

    IR3081

    Abstract: IR3087 IR3087M IR3087MTR IR3088
    Text: IR3087 PRELIMINARY DATA SHEET XPHASETM PHASE IC WITH OPTI-PHASETM, OVP, AND OVERTEMP DETECT DESCRIPTION The IR3087 Phase IC combined with an IR XPhaseTM Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides


    Original     		PDF IR3087 IR3087 32oC/W, IR3081 IR3087M IR3087MTR IR3088

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I0308J 11/01 IR30CDR.L SERIES HIGH POWER RECTIFIER DIODES Junction Size: 30 mm Diameter VRRM Class: 400 to 1000 V Passivation Process: Diffused Junction Major Ratings and Characteristics Parameters Units Test Conditions VFM Maximum Forward Voltage


    Original     		PDF I0308J IR30CDR.

    IR30D

    Abstract: No abstract text available
    Text: Bulletin I0307J 11/01 IR30DDR.L SERIES HIGH POWER RECTIFIER DIODES Junction Size: 30 mm Diameter V RRM Class: 400 to 1600 V Passivation Process: Diffused Junction Major Ratings and Characteristics Parameters Units Test Conditions VFM Maximum Forward Voltage


    Original     		PDF I0307J IR30DDR. IR30D

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492