Untitled
Abstract: No abstract text available
Text: PD - 95548 IRF820SPbF • Lead-Free www.irf.com 1 7/22/04 IRF820SPbF 2 www.irf.com IRF820SPbF www.irf.com 3 IRF820SPbF 4 www.irf.com IRF820SPbF www.irf.com 5 IRF820SPbF 6 www.irf.com IRF820SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations
|
Original
|
IRF820SPbF
EIA-418.
|
PDF
|
Complementary MOSFETs buz11
Abstract: IRF644 STP90NF03L stp3nc90zfp IRF540 complementary STP6NC60FP Application Notes STP55NE06FP STY15NA100 STP60NE06-16 stp7nb60fp
Text: POWER MOSFETs IGBTs Selection Guide P T Y U T O F P H E O U Y I O U R E O P L E C N S W H O O N T R O L Y S T E M S IG B Ts IGB Ts Ts IG BTs IG B FEATURE Logic Level Fully Clamped Low Drop Fast Switching Fast Switching + Freewheeling Diode Short Circuit Proof
|
Original
|
STGD3NB60S
STGD3NB60SD
STGD7NB60S
STGP10NB60S
STGD7NB120S-1
O-220
ISOWATT218,
PowerSO-10
Max247
STE180NE10
Complementary MOSFETs buz11
IRF644
STP90NF03L
stp3nc90zfp
IRF540 complementary
STP6NC60FP Application Notes
STP55NE06FP
STY15NA100
STP60NE06-16
stp7nb60fp
|
PDF
|
IRF820APBF
Abstract: IRF820A SiHF820A SiHF820A-E3
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
|
Original
|
IRF820A,
SiHF820A
O-220
18-Jul-08
IRF820APBF
IRF820A
SiHF820A-E3
|
PDF
|
IRF820A
Abstract: No abstract text available
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
|
Original
|
IRF820A,
SiHF820A
O-220
12-Mar-07
IRF820A
|
PDF
|
IRF820
Abstract: SiHF820 SiHF820-E3 IRF820 vishay
Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.0 RoHS* Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements
|
Original
|
IRF820,
SiHF820
O-220
18-Jul-08
IRF820
SiHF820-E3
IRF820 vishay
|
PDF
|
irf820
Abstract: No abstract text available
Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.0 RoHS* Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements
|
Original
|
IRF820,
SiHF820
O-220
12-Mar-07
irf820
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF820S, SIHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
|
Original
|
IRF820S,
SIHF820S
SMD-220
12-Mar-07
|
PDF
|
IRF820
Abstract: SiHF820 SiHF820-E3
Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.0 RoHS* Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements
|
Original
|
IRF820,
SiHF820
O-220
18-Jul-08
IRF820
SiHF820-E3
|
PDF
|
IRF820A
Abstract: SiHF820A SiHF820A-E3
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
|
Original
|
IRF820A,
SiHF820A
O-220
18-Jul-08
IRF820A
SiHF820A-E3
|
PDF
|
SiHF820AL
Abstract: 4.5v to 100v input regulator IRF820AL IRF820AS SiHF820AL-E3
Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt
|
Original
|
IRF820AS,
SiHF820AS
IRF820AL,
SiHF820AL
O-263)
O-262)
18-Jul-08
4.5v to 100v input regulator
IRF820AL
IRF820AS
SiHF820AL-E3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt
|
Original
|
IRF820AS,
SiHF820AS
IRF820AL,
SiHF820AL
O-262)
O-263)
2002/95/EC
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
|
Original
|
IRF820S,
SiHF820S
2002/95/EC
O-263)
18-Jul-08
|
PDF
|
SiHF820AL
Abstract: IRF820A IRF820AL IRF820AS SiHF820A SiHF820AL-E3
Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration
|
Original
|
IRF820AS,
SiHF820AS
IRF820AL,
SiHF820AL
O-263)
O-262)
18-Jul-08
IRF820A
IRF820AL
IRF820AS
SiHF820A
SiHF820AL-E3
|
PDF
|
IRF820ASPBF
Abstract: No abstract text available
Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt
|
Original
|
IRF820AS,
SiHF820AS
IRF820AL,
SiHF820AL
O-262)
O-263)
12-Mar-07
IRF820ASPBF
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: IRF820S, SIHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
|
Original
|
IRF820S,
SIHF820S
SMD-220
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94978 IRF820APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
|
Original
|
IRF820APbF
O-220AB
|
PDF
|
IRF820A
Abstract: SiHF820A SiHF820A-E3
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
|
Original
|
IRF820A,
SiHF820A
2002/95/EC
O-220AB
11-Mar-11
IRF820A
SiHF820A-E3
|
PDF
|
IRF820
Abstract: SiHF820 SiHF820-E3
Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements
|
Original
|
IRF820,
SiHF820
2002/95/EC
O-220AB
11-Mar-11
IRF820
SiHF820-E3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements
|
Original
|
IRF820,
SiHF820
2002/95/EC
O-220AB
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94978 IRF820APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
|
Original
|
IRF820APbF
O-220AB
08-Mar-07
|
PDF
|
mosfet h bridge 25a
Abstract: IRF820A
Text: PD- 93773A IRF820A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
|
Original
|
3773A
IRF820A
O-220AB
Gate-52-7105
mosfet h bridge 25a
IRF820A
|
PDF
|
IRF820A
Abstract: No abstract text available
Text: PD- 93773 IRF820A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
|
Original
|
IRF820A
O-220AB
IRF820A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
|
Original
|
IRF820A,
SiHF820A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
|
Original
|
IRF820A,
SiHF820A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
