biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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marking SA
Abstract: No abstract text available
Text: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)
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ENN7029
SBS806M
SBS806M
SBS006.
SBS806M]
marking SA
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)
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ENN7029
SBS806M
SBS806M]
SBS806M
SBS006.
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pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
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c18v
Abstract: C10V C25V SVC333 AM receiver 4084
Text: Ordering number:EN935B SVC333 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode
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EN935B
SVC333
SVC333
SVC333]
c18v
C10V
C25V
AM receiver
4084
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C10V
Abstract: C25V SVC333 IN 4004 diode diode IN 4004 3662 diode
Text: Ordering number:EN935B SVC333 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode
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EN935B
SVC333
SVC333
SVC333]
C10V
C25V
IN 4004 diode
diode IN 4004
3662 diode
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BAP51-02
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP51-02
OD523
MAM405
OD523)
125004/00/02/pp6
BAP51-02
BP317
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109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
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6R1MBi100P
Abstract: 1600V 100a igbt
Text: 6R1MBi100P-160 Diode Module Diode Module with Brake Diode:1600V / 100A, IGBT:1400A/75A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier
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6R1MBi100P-160
400A/75A
6R1MBi100P
1600V 100a igbt
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Untitled
Abstract: No abstract text available
Text: 6R1MBi75P-160 Diode Module Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier
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6R1MBi75P-160
400A/50A
6R1MBi100P-160
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Untitled
Abstract: No abstract text available
Text: 6R1MBi100P-160 Diode Module Diode Module with Brake Diode:1600V / 100A, IGBT:1400A/75A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier
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6R1MBi100P-160
400A/75A
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6R1MBi100P
Abstract: 6r1mbi75p-160 6r1mbi diode KE 01
Text: 6R1MBi75P-160 Diode Module Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier
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6R1MBi75P-160
400A/50A
6R1MBi100P-160
6R1MBi100P
6r1mbi75p-160
6r1mbi
diode KE 01
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Untitled
Abstract: No abstract text available
Text: 6R1MBi75P-160 Diode Module Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier
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6R1MBi75P-160
400A/50A
6R1MBi100P-160
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6R1MBI100P160
Abstract: 100A/IGBT 1600V 100a igbt
Text: 6R1MBi100P-160 Diode Module Diode Module with Brake Diode:1600V / 100A, IGBT:1400A/75A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier
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6R1MBi100P-160
400A/75A
6R1MBI100P160
100A/IGBT
1600V 100a igbt
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L9278-14
Abstract: SE-171
Text: LASER DIODE Laser diode L9278-14 TOSA type, 1310 nm FP Fabry-Perot laser diode Features Applications l Optical fiber communication l Gigabit ethernet l Fiber channel l 1310 nm FP (Fabry-Perot) laser diode l φ1.25 mm sleeve type TOSA (Transmitter Optical
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L9278-14
SE-171
KLED1041E01
L9278-14
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
O-220AC
STPSC10H065D
STPSC10H065DI
STPSC10H065B-TR
STPSC10H065G-TR
DocID023604
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BAS70-07S
Abstract: BAS70-08S
Text: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF
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BAS70-07S
BAS70-08S
OT323-6L
BAS70-08S
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marking D33
Abstract: BAS70-07S BAS70-08S
Text: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF
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BAS70-07S
BAS70-08S
OT323-6L
BAS70-08S
marking D33
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
STPSC6H065D
STPSC6H065G-TR
DocID023247
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PDF
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
STPSC10H065D
STPSC10H065G-TR
DocID023604
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LL HP
Abstract: chip die hp SOT 23 Package equivalent
Text: Linear Models for Diode Surface Mount Packages Application Note 1124 Introduction When linear or non-linear analyses are performed on diode circuits, both the diode chip and its package must be accurately modeled. The diode chip or die itself may be modeled using SPICE parameters,
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OT-23
OT323
OT-143
OT-363
OT-363
5966-0399E
LL HP
chip die hp
SOT 23 Package equivalent
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Untitled
Abstract: No abstract text available
Text: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF
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BAS70-07S
BAS70-08S
OT323-6L
BAS70-08S
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diode
Abstract: No abstract text available
Text: Diode arrays Diode arrays are available in both leaded and surface mount packages. The diode array data sheets are arranged in the following order in this chapter: • surface mount diode arrays • leaded diode arrays The diode arrays are available in the following packages:
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OCR Scan
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SC-59,
OT-23)
OT-323)
diode
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PDF
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ad130
Abstract: D1103 d1105 MMAD1109 AD1107
Text: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching
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MMAD130/D
AD1105
AD1107
ad130
D1103
d1105
MMAD1109
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