HSML-2822
Abstract: varactor diode model in ADS Limiter PIN diode ADS model hsml5822 PIN diode ADS model varactor diode in p-n junction in ads ADS varactor diode hsms2820 limiter zero bias schottky diode 2GHz transistor JSW
Text: Schottky Enhanced PIN Limiter Compact, low threshold and wideband Application Note 5438 Introduction The sharing of sites or towers by multiple transceivers subjects receiver front-end stages to overload from nonsynchronous transmissions via mutual coupling between
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HSMP382x
10Agilent
11Agilent
AV02-2139EN
HSML-2822
varactor diode model in ADS
Limiter PIN diode ADS model
hsml5822
PIN diode ADS model
varactor diode in p-n junction in ads
ADS varactor diode
hsms2820 limiter
zero bias schottky diode 2GHz
transistor JSW
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transistor JSW 07
Abstract: BTS5562E
Text: Data Sheet, Rev. 1.0, May 2008 SPOC - BTS5562E SPI Power Controller Automotive Power SPOC - BTS5562E Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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BTS5562E
transistor JSW 07
BTS5562E
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BTS5672E
Abstract: transistor JSW 12
Text: Data Sheet, Rev. 1.0, Jan. 2008 SPOC - BTS5672E SPI Power Controller Automotive Power SPOC - BTS5672E Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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BTS5672E
BTS5672E
transistor JSW 12
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jsw marking
Abstract: transistor JSW 07
Text: Data Sheet, Rev. 1.0, Jan. 2008 SPOC - BTS5682E SPI Power Controller Automotive Power SPOC - BTS5682E Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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BTS5682E
jsw marking
transistor JSW 07
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BTS5662E
Abstract: No abstract text available
Text: Data Sheet, Rev. 1.0, Jan. 2008 SPOC - BTS5662E SPI Power Controller Automotive Power SPOC - BTS5662E Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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BTS5662E
BTS5662E
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BTS5572E
Abstract: No abstract text available
Text: Data Sheet, Rev. 1.0, May 2008 SPOC - BTS5572E SPI Power Controller Automotive Power SPOC - BTS5572E Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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BTS5572E
BTS5572E
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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2FI100G
Abstract: 30S3 2fi100
Text: 2FI100G 2xiooa W JB '+ jä : Outline Drawings FAST RECOVERY DIODE MODULE etc_ 17.8 Features H -J L . 1« • If e lM U W f t * • 3 Ì « Short Reverse Recovery Time Variety of Connection Menu Insulated Type : Applications •7 — r- r^ n ^ r- |
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2FI100G
2FI100Gâ
50/60Hz
2X100
MTg30113^
11S19%
I95t/R89
Shl50
30S3
2fi100
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Untitled
Abstract: No abstract text available
Text: 6DI100A-050 iooa l± s < n - * : ï > = L - } V ' < n — \=7 > i > 7 ,9 =£\>n.-)V : Outline Drawings POW ER T R A N S IS T O R M ODULE • 4# ^ : Features ,' V K-'v* • 7 '} —jfc-f >J > V # 4 =t— Kl*9 E • hFE*''S!nL' • Including Free W heeling Diode
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6DI100A-050
I95t/RS9
Shl50
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SXG300G
Abstract: 40101B
Text: SXG80G BRIDGE RECTIFIER DATA b Three-Phase Diode Bridges UNIT TYPE Ipc amp» A .N T. T. w 1DC amps A .F Sm/s • FS M T. amps I* t A 2s 25 C 4 5°C T. 25°C 80 68 16 3 85 190 170 SXG120G 100 120 105 205 S X G 1 80G 180 160 205 205 205 SXG21OG 210 1 85 370
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SXG80G
SXG120G
SXG21OG
SXG300G
SXG425G
SXG525G
SXGA620G
SXH640G
SXT670G
40101B
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r4kf
Abstract: A454 30S3 T151 T460 T760 T930 TP802C06 T4600
Text: T P 802C 06 ioa *±'J'*-K ' > a - y h + - / < U 7 i ef * - K SCHOTTKY BARRIER DIODE I» « Features '1&Vf Low V f C o n n e c tio n D ia g ra m Super high speed sw itch in g . a w e « *« « !* High reliability by planer design : A ppl ¡cations H igh speed pow er sw itch in g .
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TP802C06noA)
500ns,
Cl95t/R89)
r4kf
A454
30S3
T151
T460
T760
T930
TP802C06
T4600
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2FI50A
Abstract: T760 T810 T930 lthf* E3
Text: 2FI50A 2 x50A ! Outline Drawings FAST RECOVERY DIODE MODULE • 4# : Features • S h o rt Reverse Recovery Tim e • V ariety o f C o n n e c tio n M e n u • SfeSfîfé Insulated Type ■ ff liÊ i A pplications A rc -W e ld e rs • K ffl • F re e -W h e e lin g D iode
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2FI50A
2X50A)
2FI50A
50/60Hz
eaTa5S35^
l95t/R89
T760
T810
T930
lthf* E3
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DIODE aaz
Abstract: No abstract text available
Text: U tipe Super Fast Recovery Diode S in g le D iode OUTLINE DIMENSIONS D6L20U C a s e : ITO-220 » 3.3 ±a-z 200V 6A im i Type No. a -1 |,E i} m ~T36L2QU Date code • trr3 5 n s s it a r e • T 7 JL= E — J b h' 05 îy r ô r 1.3 ±0-2 0.5 ±( ffl Ü • S R S j
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D6L20U
ITO-220
T36L2QU
DIODE aaz
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Untitled
Abstract: No abstract text available
Text: y l j 7 y ' f ^ - K Bridge Diode Single In-line Package OUTLINE DIMENSIONS U4SBD TO 600V 4A • * i u S I P A '7 ' J - V •U L IS p I U L File No.E 1 4 2 4 2 2 • S it E L B l fs m •g S )* g * tr 5 •s R m s • mm, OA, aaw • m is . £ . fa • Æ tè ü
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U4SB20
DDD31SS
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stepup transformer 24V to 2KV
Abstract: UPL1E101MPH LM258ST-ADJ UPL1V222MRH 67147450 UPL1H560MPH UPL1H560MAH G1033 UPL1V182MRH lm258stadj
Text: March 1996 Semiconductor LM2588 SIMPLE SWITCHER 5A Flyback Regulator with Shutdown General Description Features The LM2588 series of regulators are monolithic integrated circuits specifically designed for flyback, step-up boost , and forward converter applications. The device is available
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LM2588
13tti
bS01124
D103337
stepup transformer 24V to 2KV
UPL1E101MPH
LM258ST-ADJ
UPL1V222MRH
67147450
UPL1H560MPH
UPL1H560MAH
G1033
UPL1V182MRH
lm258stadj
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5SB10
Abstract: 5SB40 D5SB10 5SB60 SHINDENGEN DIODE D5SB40
Text: T S«tlW -i '7 o3^ S -' iV-ï»s= fliSnK=rfs8Sg»¡,! ÖSnBfl? QQQG4Ö3 51T * S H E J 54E D SHINDENGEN ELECTRIC MFG O U T L IN E D IM E N S IO N S D5SBD l4.6± .3.6 * 600V 6A 2.7±02 0.7±01 ® D (D U n it i mm R A T IN G S iiSÊ& il^SËfê If Absolute Maximum Ratings
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5SB10
5SB20
5SB40
5SB60
50HzIESE®
5SB10
5SB40
D5SB10
5SB60
SHINDENGEN DIODE
D5SB40
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transistor JSW
Abstract: diode JSW FL 576-K125
Text: 6DI30M-050 30 a Outline Drawings POWER TRANSISTOR MODULE ‘ F e a tu re s • ifi5hFE High DC Current Gain • iS i S TA'V’f-'sif High Speed Switching : A p p lic a tio n s • 9 General Purpose Inverter • Uninterruptible Power Supply • N C lflM S tM
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6DI30M-050
E82988
l95t/R89
Shl50
transistor JSW
diode JSW
FL 576-K125
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diode smd jsw
Abstract: jsw smd code diode smd jsw 05 1500Y jsw 60
Text: L I N D o c #: 1668 L X 1668 M T I h e I n f i n i t e C ^ > E L P o w e r E C T k I o f U N I C S P r o g r a m m a b l e M u l t ip l e O u t p u t D C : D C C o n t r o l l e r n n o v a t i o n P r o d u c t i o n DESCRIPTION The LX1668 is a M onolithic Sw itching
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LX1668
diode smd jsw
jsw smd code
diode smd jsw 05
1500Y
jsw 60
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marking 606
Abstract: No abstract text available
Text: Ordering n u m b e r:E N 4889 II _ FX606 No.4889 N-Channel Silicon MOSFET SAÜVO i — l Ultrahigh-Speed Switching Applications I F eatures •Composite type composed of two low ON-reBistance N-channel MOSFET chips for ultrahigh-speed
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FX606
FX606
2SK1470,
marking 606
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Untitled
Abstract: No abstract text available
Text: SP690A/692A/802L/ 802M/805L/805M SIGNAL PROCESSING EXCELLENCE Microprocessor Supervisory Circuits I Precision Voltage Monitor: SP690A/SP802L/SP805L at 4.65V SP692A/SP802M/SP805M at 4.40V I Reset Time Delay - 200ms I Watchdog Timer -1.6 sec timeout I Minimum component count
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SP690A/692A/802L/
802M/805L/805M
SP690A/SP802L/SP805L
SP692A/SP802M/SP805M
200ms
250mA
MAX690A/692A/802L/802M/805L
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transistor JSW
Abstract: jSw Diode
Text: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG200Q1US51
transistor JSW
jSw Diode
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jSw Diode
Abstract: No abstract text available
Text: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage
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MG300Q2YS50
961001EAA1
jSw Diode
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG15Q6ES50A m r; 1 = ; n f i F ^ n i TOSHIBA GTR MODULE • ■ Mr SILICON N CHANNEL IGBT la r ta «v v m ■ HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package.
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MG15Q6ES50A
961001EAA1
TjS125Â
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Untitled
Abstract: No abstract text available
Text: ART Preliminary Data Sheet Microelectronics LH1208 PBX Switch Set Features Description • Inputs — On/off ring switches — On/off message switch — All switches on — All switches off — Device reset — Off-hook detection — Strobe address The LH1208 PBX Switch Set combines analog and
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LH1208
LH1206AAJ
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