905 nm Infrared Emitting Diode
Abstract: 1 Watt 808 nm laser diode S10 diode S10 package light sensitive trigger all components
Text: Pulsed Laser Diode Module LS-/LT-Series DESCRIPTION The LS- and LT series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a + 5/12 VDC supply
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7040 TTL
Abstract: LS588 905 nm Infrared Emitting Diode
Text: Pulsed Laser Diode Module LS-/LT-Series Description The LS- and LT series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a + 5/12 VDC supply and a trigger
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LT4320
Abstract: SML-010
Text: DEMO MANUAL DC1902B LT4320 Ideal Diode Bridge Controller Description Demonstration circuit 1902B features the ideal diode bridge controller LT 4320 suitable for applications that require low to medium current AC to DC full-wave rectification or DC polarity correction and a small compact solution
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DC1902B
LT4320
1902B
LT4320
dc1902bf
SML-010
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4321F
Abstract: TG12 LT432
Text: LT4321 PoE Ideal Diode Bridge Controller Features Description n n n The LT 4321 is a dual ideal diode bridge controller that enables a Power over Ethernet PoE powered device (PD) to receive power in either voltage polarity from RJ-45 data pairs, spare pairs, or both. The LT4321 and
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LT4321
RJ-45
LT4321
LTC4355
LTC4359
LTC4290/LTC4271
4321f
com/LT4321
4321F
TG12
LT432
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MARKING CODE c25
Abstract: C25 schottky MOSFET C25 c25 mosfet n mosfet low vgs CMLM0205 10V Schottky Diode
Text: Central CMLM0205 M U LT I D I S C R E T E Semiconductor Corp. MODULE SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE TM TM DESCRIPTION: The Central Semiconductor CMLM0205 is a Multi Discrete Module ™ consisting of a single N-Channel MOSFET and a Low VF Schottky diode
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CMLM0205
CMLM0205
OT-563
OT-563
200mA,
400mA
100mA
500mA
MARKING CODE c25
C25 schottky
MOSFET C25
c25 mosfet
n mosfet low vgs
10V Schottky Diode
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749022016
Abstract: 749022017 SMBJ58A
Text: DEMO MANUAL DC2093A LT4275/LT4321 LTPoE+/IEEE 802.3at/ IEEE 802.3af Compliant Powered Device Interface Description Demonstration circuit 2093A features the LT 4275, a fourth generation powered device PD controller and the LT4321, an ideal diode bridge controller for Power over
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DC2093A
LT4275/LT4321
LT4321,
DC2093A
DC2093A-A,
DC2093A-B,
DC2093A-C
DC2093A-A
LT4275A
dc2093af
749022016
749022017
SMBJ58A
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Step-up 12V to 36V 300mA
Abstract: LT3473 LT3473A LT3473AEDE LT3473EDD LTC3473A ltc3436 3473
Text: LT3473/LT3473A Micropower 1A Boost Converter with Schottky and Output Disconnect U FEATURES DESCRIPTIO • The LT 3473/LT3473A are micropower step-up DC/DC converters with integrated Schottky diode and output disconnect circuitry in low profile DFN packages. The
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LT3473/LT3473A
3473/LT3473A
50mm2.
LT3471
LT3479
TSSOP-16E
3473f
Step-up 12V to 36V 300mA
LT3473
LT3473A
LT3473AEDE
LT3473EDD
LTC3473A
ltc3436
3473
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1009I
Abstract: LT1009CZ LT317A 1009f 406p LT1019 LM136 LT1009 LT1009CH LT1009I
Text: LT1009 Series 2.5V Reference FEATURES DESCRIPTION n The LT 1009 is a precision trimmed 2.5V shunt regulator diode featuring a maximum initial tolerance of only ±5mV. The low dynamic impedance and wide operating current range enhances its versatility. The 0.2% reference
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LT1009
LM136
LT1236
LT1460
10ppm/
OT-23
LT1634
LT1461
1009ff
1009I
LT1009CZ
LT317A
1009f
406p
LT1019
LT1009CH
LT1009I
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LT3682EDD datasheet
Abstract: LT3682EDD#PBF MARKING TRANSISTOR BD RC B150 LQH55D LT3682 eef 1208
Text: LT3682 1A Micropower Step-Down Switching Regulator FEATURES DESCRIPTION n The LT 3682 is an adjustable frequency 250kHz to 2.2MHz monolithic buck switching regulator that accepts input voltages up to 36V. A high efficiency 0.5Ω switch is included on the device along with a boost diode and the
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LT3682
250kHz
QFN24
TSSOP16E
LT3684
850mA,
DFN10
MSOP10E
LT3685
LT3682EDD datasheet
LT3682EDD#PBF
MARKING TRANSISTOR BD RC
B150
LQH55D
LT3682
eef 1208
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diode yz 040
Abstract: GP 836 DIODE DIODE 3FV 60 3fv 60 Diode LT 443
Text: SEM IC O N D U C TO R KDZ3.6FV-KDZ36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE C O N ST A N T V O LT A G E R EG U L A T IO N A PPL IC A T IO N . R E FE R E N C E V O LT A G E A PPL IC A T IO N . CATHODE MARK FEATURES • Small Package : TFSC
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6FV-KDZ36FV
/20VV
/22VV
DZ24VV
KDZ27VV
DZ10VV
\\\VKDZ11VV
\\VKDZ12VV
WKDZ13VV
KDZ15VV
diode yz 040
GP 836 DIODE
DIODE 3FV 60
3fv 60
Diode LT 443
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LT 0216 diode
Abstract: 20/LT 0216 diode Diode LT 410
Text: SGS-THOMSON ;[Li MM D(S MDS50 DIODE / THYRISTOR MODULE FEATURES • V qrm = V rrm UP TO 1200 V ■ lT(AV) = 35 A . HIGH SURGE CAPABILITY . INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) DESCRIPTION The MDS50 family are constitued of one rectifier diode and general purpose SCR. Suited for
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MDS50
MDS50
LT 0216 diode
20/LT 0216 diode
Diode LT 410
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LT 0220 diode
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Damper diode BY559X-1500U ultra fast, FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA Low forw ard vo lt drop Low forw ard recovery voltage
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BY559X-1500U
150kHz.
BY559
LT 0220 diode
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IR E78996
Abstract: E78996 rectifier module E78996 Diode E78996 E78996 IR IRKH136-16D25 14D20 IR E78996 135 KL23014
Text: International H ]Rectifier Power Modules Thyristor with high voltage diode Voltage Range lT A V @ T c i f (a v (1) (2) (3) (4) Diode •TSM' >FSM (5) R th JC DC ) (3) (4) Thyristor (V) (V) (A) (°C ) 50 H z (A) IRKH136-14D20 IRKH136-16D25 IRKL136-14D20
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IRKH136-14D20
IRKH136-16D25
IRKH142-14D20
IRKH142-16D25
IRKH142-18D28
IRKH142-20D32
IRKH162-14D20
IRKH162-16D25
170-14D20
IRKH170-16D25
IR E78996
E78996 rectifier module
E78996 Diode
E78996
E78996 IR
14D20
IR E78996 135
KL23014
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR KTX303U TE CHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE SW ITC H IN G A PPLICATION. LOW V O LT A G E HIGH SPEED SWITCHING. FEA T U RE S • Including two TR, Diode devices in USV. (Ultra Super Mini type with 5 leads)
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KTX303U
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Damper diode BY559X-1500U fast, FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA V R = 1500 V Low forw ard vo lt drop Low forw ard recovery voltage
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BY559X-1500U
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BY359DX-1500
Abstract: 359D
Text: Philips Semiconductors Objective specification Rectifier diode fast, high-voltage FEATURES • • • • • BY359DX-1500 SYMBOL QUICK REFERENCE DATA Low forw ard vo lt drop Fast sw itching S oft recovery characteristic High therm al cycling perform ance
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BY359DX-1500
OD117
BY359DX-1500
359D
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dsei 31-06c
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED Type 440 640 400 600 Symbol LT— I <H-H- 1-0 DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C Test Conditions DSEI 2x 30 DSEI 2x 31 Maximum Ratings (per diode) ^FRM TVJ T\um Tc = 85°C; rectangular, d = 0.5
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30-04C
31-04C
30-06C
31-06C
OT-227
E72873
dsei 31-06c
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TIC 44 SCR
Abstract: SCR TIC 44 MTO thyristor unial
Text: MITEL MP02 XXX 175 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes Septem ber 1992 version, 2.2 DS4477-3.0 Decem ber 1998 FEATURES • ■ ■ ■ ■ KEY PARAMETERS VDRM 1600V 'ts m 6800A lT AV (per arm) 175A Visol 2500V Dual Device M odule
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DS4477-3
TIC 44 SCR
SCR TIC 44
MTO thyristor
unial
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DD100HB160
Abstract: 1S43 DF30CA DF60A df30aa
Text: S A NS HA ELECTRIC MF 6 CO T> 37E 7 cm S 4 3 ÖOOOOOb 1 E lT s E M J DIODE . T'Z3-0? ISOLATED TYPE 3 PHASE DIODE MODULE TYPE DF20AA DF20BA DF20CA DF20DB DF30AA DF30BA DF30CA DF30DB DF40AA V A *C 1200-1600 400— 800 800— 1600 400—800 1200-1600 400—800
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DF20AA
DF20BA
DF20CA
DF20DB
DF30AA
DF30BA
DF30CA
DF30DB
DG20AA
SDF2000B
DD100HB160
1S43
DF60A
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Diode LT 209
Abstract: SCR thyristor test
Text: SGS-IHOMSON MDS50 ly DIODE / THYRISTOR MODULE PRELIMINARY DATASHEET FEATURES • V d RM = V rrm UP TO 1200 V ■ lT AV = 3 5 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) DESCRIPTIO N The MDS50 family are consist of one rectifier
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MDS50
MDS50
Diode LT 209
SCR thyristor test
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DIODE 1N54
Abstract: 1N60 germanium diode 1N34 1N542 1N48 diode 1N38A diode 1N69a 1n81a 1N75 1N68
Text: GERMANIUM DIODE TYPE PEAK REV ERSE V O LTA G E AVERA G E FO RW ARD CU RREN T MINIMUM FO R W A R D CU RREN T A T 1 V O LT M AXIM UM REV ERSE CU RREN T A T 25°C V O LT S mA mA pA 1N34 75 50 5 50 a t -10V 1N34A 75 50 5 30 a t -10V 1N35 75 22.5 7 10 at -10V 1N36
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1N34A
1N38A
1N38B
1N52A
1N54A
1N57A
1N58A
1N60A
1N63A
-100V
DIODE 1N54
1N60 germanium diode
1N34
1N542
1N48 diode
diode 1N69a
1n81a
1N75
1N68
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1N135
Abstract: diode 1n295 1n69 1N541 1N295 1N128 1N69A 1N69A diode diode 1N69a 1N295 diode
Text: CRIMSON S E M I CONDU CT OR INC dF | SSlIOÌt 0D003S0 7 2514096 C R IMSON S E M I C O N D U C T O R INC 99D 00350 D T'Ot'Ol GERMANIUM DIODE TYPE PEAK RE VE R SE V O LT A G E AVERAGE FO RW AR D CURRENT V O LTS mA M INIMUM FO RW AR D CURRENT A T 1 V O LT M A X IM U M
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0D003S0
1N66A
1N67A
-100V
1N68A
1N69A
1N70A
at-10V
1N81A
1N135
diode 1n295
1n69
1N541
1N295
1N128
1N69A diode
diode 1N69a
1N295 diode
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Damper diode fast, high-voltage FEATURES • • • • • BY459-1500, BY459-1500S SYMBOL QUICK REFERENCE DATA Low forw ard vo lt drop Fast sw itching S oft recovery characteristic High therm al cycling perform ance
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BY459-1500,
BY459-1500S
BY459
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BY329-1500
Abstract: by329 BY329-1500S
Text: Philips Semiconductors Product specification Damper diode fast, high-voltage FEATURES • • • • • BY329-1500, BY329-1500S SYMBOL QUICK REFERENCE DATA Low forw ard vo lt drop Fast sw itching S oft recovery characteristic High therm al cycling perform ance
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BY329-1500,
BY329-1500S
BY329
BY329-1500
BY329-1500S
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