1N6496
Abstract: 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100
Text: INCH-POUND MIL-PRF-19500/474G 22 August 2008 SUPERSEDING MIL-PRF-19500/474F 23 January 2007 The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 November 2008. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,
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MIL-PRF-19500/474G
MIL-PRF-19500/474F
1N5768,
1N5770,
1N5772,
1N5774,
1N6100,
1N6101,
1N6496,
1N6506,
1N6496
1N6101
1n6511
1N6506
1N6507
1N5768
1N5770
1N5772
1N5774
1N6100
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GA100TS120U
Abstract: No abstract text available
Text: PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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50060B
GA100TS120U
T52-7105
GA100TS120U
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GA250TD120U
Abstract: ic 501
Text: PD - 5.054 PRELIMINARY GA250TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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GA250TD120U
10kHz
GA250TD120U
ic 501
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multicolor led 2-pin
Abstract: la cn5m lcg t67c-s2u2 M67S-N2Q2 Q65110A7237 lcg M67s p2q2 lw p4sg v2ab OSLUX LCB M67S LCB E6SG
Text: Light Emitting Diodes Lumineszenzdioden 13 Light Emitting Diodes . Lumineszenzdioden . 13 Safety Instructions .
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lg led tv electronic diagram
Abstract: LG 631 TV LG lcg M67s p2q2 datasheet light emitting diode Q65110A2431 LYYYG6SF-CADB-35 LCB E6SG LED 5mm 12000 mcd white 2700K LCB M67S LW W5SM
Text: Light Emitting Diodes Lumineszenzdioden 11 Light Emitting Diodes . Lumineszenzdioden . 11 Safety Instructions .
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diamond sx 600
Abstract: Q65110A8176 Q65110A1954 LA E6SF Q65110A8177 LRTBGFTG Q65110A9038 LW QH8G-Q2S2-3K5L-1 Q65110A2395 pointled
Text: Light Emitting Diodes 11 Light Emitting Diodes . 11 Safety Instructions . 13
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LT 8233
Abstract: diode LT 8233 4CM6 U891 L486 D029 U615
Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS
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00001t3
9305-F-078
lead-171
LT 8233
diode LT 8233
4CM6
U891
L486
D029
U615
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Untitled
Abstract: No abstract text available
Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS
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00Q01t
9305-F-078
DO-35
DO-41
DO-15
DO-201AD
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ITB68
Abstract: No abstract text available
Text: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS
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9305-F-080
DO-35
DO-41
DO-15
DO-201AD
ITB68
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motor IG 2200 53 X 000 41 R
Abstract: 6504D DIODE 33z POW-R-BRIK diode d7z T 705 scr scr 209
Text: t i p o w - r - b r i k _ P jwerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 P h a S B C o n t r o l M o d U lG S 345-800 Amperes/400-3000 Volts POW-R-BRIK™
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Amperes/400-3000
7503D
9003D
0803D
1003D
1203DH
0903D
motor IG 2200 53 X 000 41 R
6504D
DIODE 33z
POW-R-BRIK
diode d7z
T 705 scr
scr 209
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in4606
Abstract: IN4150 1N4606 1N4150 1N4450 1N4607 1N460B D035 DT230C DT230H
Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number Ir BV 1OOü A Min. V 1N4451 40 1N4607 85 Vf @ 25°C Max. <nA) 1 Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr Package T»pe (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.
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100/iA
1N4150*
1N4450
1N4606
100/tA
1N445I
1N4607
1N460B
DT230C
DT230H
in4606
IN4150
1N4150
D035
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in4447
Abstract: IN4446 in4449 DIODe IN4446 1n914 equivalent IN4I48 in4448 IN4305 1N4148 1N4149
Text: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20
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100/1A
1N914
1N914A
1N914B
1N916
1N916A
1N916B
1N4148*
1N4149
1N4151
in4447
IN4446
in4449
DIODe IN4446
1n914 equivalent
IN4I48
in4448
IN4305
1N4148
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DIODe IN4446
Abstract: in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX
Text: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20
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100/1A
1N914
1N914A
1N914B
1N916
1N916A
1N916B
1N4148*
1N4149
1N4151
DIODe IN4446
in4447
in4449
IN4I48
1n914 equivalent
in4448
JANTX 1N916
1n916 equivalent
IN4446
1N916 JANTX
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D311 equivalent
Abstract: DIODE d307 D312 diode JS 684 THYRISTOR OE 90C 2600 diode lt 445 ic "D312"
Text: International S Rectifier s e r ie s i r k . f i 52 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules F eatu res Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package
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200to
to18NT
D311 equivalent
DIODE d307
D312 diode
JS 684 THYRISTOR
OE 90C 2600
diode lt 445
ic "D312"
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CU421
Abstract: No abstract text available
Text: r n n m s CM4212A2 CM4216A2 K Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diode POW-R-BLOK Modules 25 Amperes/1200-1600 Volts Description: Powerex SCR/Diode POW-R-BLOK™ Modules are designed for use in applications
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CM4212A2
CM4216A2
Amperes/1200-1600
CM4212A2,
CU421
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ff-310
Abstract: No abstract text available
Text: • 4 3 0 2 5 7 1 2 3 H A o o s m y o R R 1 1 3 ■ HAS I S I R F F 3 1 0 / 3 1 1 / 3 1 2 / 3 1 3 I R F F 3 1 O R / 3 1 1 R / 3 1 2 R / 3 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TQ-205AF • 1.35A and 1.15A, 350V - 400V
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TQ-205AF
IRFF310,
IRFF311,
IRFF312,
IRFF313
IRFF310R,
IRFF311R,
IRFF312R,
IRFF313R
75BVdss
ff-310
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Untitled
Abstract: No abstract text available
Text: / r u n « TECHNOLOGY LTC1174 _ LTC1174-3.3/LTC1174-5 H igh E ffic ie n c y S te p -D o w n a n d In v e rtin g D C /D C C o n v e rte r FCRTUR6S DCSCRIPTIOn • H ig h Effic ie n c y: U p to 9 4 % The L T C 1 1 7 4 is a simple current m ode DC /D C converter
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LTC1174
LTC1174-3
3/LTC1174-5
320mA
4VT012V
CTX100-4
TAJD226K020
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flyback transformer pin configuration
Abstract: LT1072 design manual Zener diode with 9v FOR POWER SUPPLY Zener diode with 9v zener diode snubber networks amplifier 9v a 500v 3.6v zener diode 500V voltage regulator ethernet transformer Application Note flyback transformer pin
Text: r DESIGN 1NOTES • V ^ a T illiT T iE F I T iB ■fflVJI IIHILVANA A TEC H N O LO G Y February, 1990 Number 31 in a series from Linear Technology Corporation Isolated Power Supplies for Local Area Networks Sean Gold Circuit Design Introduction Local Area Netw orks such as Eth ernet or Cheapernet™ , re
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LT1072
10mVp-p
150mA
250mA
PE-65329
PE-65342
400mA/DIV
10/is/DIV
PE-65342
PE-65329
flyback transformer pin configuration
LT1072 design manual
Zener diode with 9v FOR POWER SUPPLY
Zener diode with 9v
zener diode snubber networks
amplifier 9v a 500v
3.6v zener diode
500V voltage regulator
ethernet transformer Application Note
flyback transformer pin
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifie f PD - 5.054 GA250TD120U PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Fe at ur es — • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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GA250TD120U
10kHz
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Untitled
Abstract: No abstract text available
Text: • . I Bulletin 127093 rev. A 09/97 In te rn a tio n a l I R Rectifier i r k FAST THYRISTOR/ DIODE and . f i 5 2 . s e r i e s INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 150 A ■ Fast tu rn -o ff th yristo r ■ Fast recovery diode ■ High surge capability
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E78996
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Untitled
Abstract: No abstract text available
Text: • M302271 00537S1 HGT ■ HAS HARRIS 2 N 6 7 8 4 N -Channel Enhancem ent-M ode Power M OS Field-Effect Transistor August 1991 Package Features TO-2Û5AF BOTTOM VIEW • 2.25A, 200V * rDS on = 1-5 n • S O A is Power-Dlssipation Limited SO URCE • Nanosecond Switching Speeds
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M302271
00537S1
LH0063
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diode lt 445
Abstract: Diode SM Varactor
Text: Hyperabrupt Varactor Diode Outline Drawing Features: • ■ ■ ■ VHF to UHF & L Band Operation Low Series Resistance Surface Mountable S O T-23 Package Outline - Single diode SM V1204-99A - Two diodes back to back (SM V 1204-99B ) High Reliability Types:
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V1204-99A)
1204-99B
100mA
50MHz
diode lt 445
Diode SM
Varactor
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Untitled
Abstract: No abstract text available
Text: @ M ITEL DF685 Fast Recovery Diode S E M IC O N D U C T O R Supersedes Septem ber 1995 version, DS4303 - 1.2 DS4303 - 1.3 March 1998 APPLICATIONS KEY PARAMETERS • Snubber Diode For GTO Applications. ^rrm 4500V ^f av 445A 'fsm 4500A Qr 650(iC trr 5^is FEATURES
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DS4303
DF685
DF685
M779b.
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MC1466
Abstract: MC1466L MC1466L equivalent schematic of mc1466 1E75 MJE340 REGULATOR DM 0265 R pin EQUIVALENT ITT 1N4001 7905 positive voltage regulator MC1466 L
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PRECISION WIDE RANGE VOLTAGE and CURRENT REGULATOR PRECISION WIDE RANGE VOLTAGE AND CURRENT REGULATOR T h is u n iq u e “f lo a t in g " re g u la t o r c a n d e liv e r h u n d r e d s o f v o lt s — lim ite d o n ly b y th e b r e a k d o w n v o lt a g e o f th e e x te rn a l s e rie s
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MC1466L
CMH30HO:
MC1466
MC1466L equivalent
schematic of mc1466
1E75
MJE340 REGULATOR
DM 0265 R pin EQUIVALENT
ITT 1N4001
7905 positive voltage regulator
MC1466 L
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