2068 dd
Abstract: 6811 6A259 6A595 6B259 6B273 6B595
Text: ALLEGRO POWER INTERFACE APPLICATION GUIDE LED DISPLAY DRIVERS Io Abs Max Vo OUTPUTS SINK/ SOURCE DIODE CLAMP LATCHED DRIVERS SERIAL INPUT r DS on PACKAGE DEVICE 90 mA 90 mA 100 mA 100 mA 100 mA 150mA 150 mA 150 mA 150 mA 350 mA 120 mA 350 mA 17 V 17 V 20 V
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150mA
AMS-180E
2068 dd
6811
6A259
6A595
6B259
6B273
6B595
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PDF
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2068 DD
Abstract: 6A259 6A595 6B259 6B273 6B595 2068 DD 8 pin dip
Text: ALLEGRO POWER INTERFACE APPLICATION GUIDE LED DISPLAY DRIVERS Io Abs Max Vo OUTPUTS SINK/ SOURCE DIODE CLAMP LATCHED DRIVERS SERIAL INPUT r DS on PACKAGE DEVICE 90 mA 90 mA 100 mA 100 mA 100 mA 150 mA 150 mA 150 mA 350 mA 120 mA 350 mA 17 V 17 V 20 V 30 V
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AMS-180C
2068 DD
6A259
6A595
6B259
6B273
6B595
2068 DD 8 pin dip
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PDF
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ADN2848
Abstract: ADN2848ACP-32 ADN2848ACP-32-RL ADN2848ACP-32-RL7 ADN2850 ADN2860 CP-32 MO-220-VHHD-2 transmitter circuit using laser diode
Text: a 3 V Dual-Loop 50 Mbps to 1.25 Gbps Laser Diode Driver ADN2848 FEATURES 50 Mbps to 1.25 Gbps Operation Single 3.3 V Operation Bias Current Range 2 mA to 100 mA Modulation Current Range 5 mA to 80 mA Monitor Photo Diode Current 50 A to 1200 A 50 mA Supply Current at 3.3 V
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ADN2848
32-Lead
ADN2848
32-Lead
CP-32)
MO-220-VHHD-2
C02746
ADN2848ACP-32
ADN2848ACP-32-RL
ADN2848ACP-32-RL7
ADN2850
ADN2860
CP-32
MO-220-VHHD-2
transmitter circuit using laser diode
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5346B 9.1 V - 150 MA - 5 W Glass Passivated Zener Diode 1.40 Diodes Reference/Re. Page 1 of 1 Enter Your Part # Home Part Number: 1N5346B Online Store 1N5346B Diodes 9.1 V - 150 MA - 5 W Glass Passivated Zener Diode Transistors Integrated Circuits Optoelectronics
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1N5346B
1N5346B
DO-201AD
com/1n5346b
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PDF
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1N4448W
Abstract: 5KV fast recovery DIODE
Text: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25℃ IFSM 500 mA Power Dissipation Ptot
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1N4448W
OD-123
1N4448W
5KV fast recovery DIODE
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1N4448WS
Abstract: No abstract text available
Text: 1N4448WS SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25 C IFSM 500 mA Power Dissipation Ptot
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1N4448WS
OD-323
1N4448WS
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25℃ IFSM 500 mA Power Dissipation Ptot
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Original
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1N4448W
OD-123
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PDF
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1N4448W
Abstract: No abstract text available
Text: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25℃ IFSM 500 mA Power Dissipation Ptot
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1N4448W
OD-123
1N4448W
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PDF
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1N4448WS
Abstract: No abstract text available
Text: 1N4448WS SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25 C IFSM 500 mA Power Dissipation Ptot
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1N4448WS
OD-323
1N4448WS
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4448WS SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25 C IFSM 500 mA Power Dissipation Ptot
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Original
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1N4448WS
100mA
100MHz,
OD-323
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PDF
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5KV fast recovery DIODE
Abstract: 1N4448W
Text: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25℃ IFSM 500 mA Power Dissipation Ptot
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Original
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1N4448W
OD-123
5KV fast recovery DIODE
1N4448W
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PDF
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Untitled
Abstract: No abstract text available
Text: BAV99 200 mA 70 V High Conductance Ultra-Fast Switching Diode Features Description • • • • The BAV99 is a 350 mW high-speed switching diode array with series-pair diode configuration. It achieves high-current conductivity, up to 200 mA, in a very small
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BAV99
BAV99
OT-23
BAV70
BAW56.
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Untitled
Abstract: No abstract text available
Text: Diodes DIP Type Silicon Epitaxial Planar Diode 1N4148 Features Fast switching diode DO34 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Reverse voltage VR 75 V Peak reverse voltage VRM 100 V IF 200 mA Io 150 mA Surge Forward Current at t < 1 s and Tj = 25
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1N4148
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C 828 Transistor
Abstract: C 828 Transistor pins TRANSISTOR C 369 transistor c 828 low level Mil-R-39016 iC 828 Transistor transistor 828 MIL-R-39016/9 828 diode MIL-R-39016-9
Text: MA MAD MADD MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MA MAD MADD MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE
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MIL-R-39016/9
MIL-R-39016/15
MIL-R-39016/20
MIL-R-28776/1
C 828 Transistor
C 828 Transistor pins
TRANSISTOR C 369
transistor c 828 low level
Mil-R-39016
iC 828 Transistor
transistor 828
MIL-R-39016/9
828 diode
MIL-R-39016-9
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PDF
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minimelf diodes color
Abstract: MINI-MELF DIODE BLACK CATHODE CDSU4148 CDSN4148 CDSS4148
Text: Small-Signal Switching Diode LL4148-G Reverse Voltage:100V Forward Current: 150 mA Features MiniMELF SOD-80 Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the
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LL4148-G
OD-80)
CDSU4148,
CDSS4148
CDSN4148
100MHz,
MDS0209003A
minimelf diodes color
MINI-MELF DIODE BLACK CATHODE
CDSU4148
CDSN4148
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PDF
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MSWSH-020-24
Abstract: MEST2G-025-10
Text: Spice Models for Aeroflex / Metelics PIN Diode Switch Elements CHIP Robert Caverly Non-Linear Diode SPICE N=1 PIN Diode SPST & SPDT Switch Elements S Par's Is mA Iknee mA Repi Ohm s CJmod Series PIN Y Y 2.50E-07 5 1000 0.04 MEST2GFC-010-25 Series Pin N N
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50E-07
MEST2GFC-010-25
MEST2G-020-15
30E-07
90E-06
MEST2G-050-45
A17134
MSWSH-020-24
MEST2G-025-10
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PDF
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Untitled
Abstract: No abstract text available
Text: BAW56M3T5G Preferred Device Product Preview Monolithic Dual Switching Diode Common Anode http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Rating Peak Forward Surge Current
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BAW56M3T5G
OT-723
631AA
BAW56M3/D
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PDF
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Untitled
Abstract: No abstract text available
Text: BAV99LT1 HIGH-SPEED DOUBLE DIODE fast switching in thick and thin-film circuits diode. Cathode 2 1 Anode 3 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit VR 75 V VRRM 85 V IF 215 125 mA mA IFRM 450 mA Non-repetitive Peak Forward Current Tj = 25 C
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BAV99LT1
OT-23
150mA
150oC
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PDF
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BAV99LT1
Abstract: No abstract text available
Text: BAV99LT1 HIGH-SPEED DOUBLE DIODE fast switching in thick and thin-film circuits diode. Cathode 2 1 Anode 3 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit VR 75 V VRRM 85 V IF 215 125 mA mA IFRM 450 mA Non-repetitive Peak Forward Current Tj = 25 C
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BAV99LT1
OT-23
BAV99LT1
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PDF
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minimelf diodes color
Abstract: cdsu4148 CDSN4148 CDSS4148 minimelf SOD80
Text: Small-Signal Switching Diode COMCHIP www.comchip.com.tw LL4148-G Reverse Voltage:100V Forward Current: 150 mA Features MiniMELF SOD-80 Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the
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Original
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LL4148-G
OD-80)
CDSU4148,
CDSS4148
CDSN4148
100MHz,
MDS0209003A
minimelf diodes color
cdsu4148
CDSN4148
minimelf SOD80
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PDF
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BAV99LT1
Abstract: No abstract text available
Text: BAV99LT1 HIGH-SPEED DOUBLE DIODE fast switching in thick and thin-film circuits diode. Cathode 2 1 Anode 3 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit VR 75 V VRRM 85 V IF 215 125 mA mA IFRM 450 mA Non-repetitive Peak Forward Current Tj = 25 C
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BAV99LT1
OT-23
150oC
BAV99LT1
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PDF
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SL 100 NPN Transistor
Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE
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OCR Scan
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THC-2484
THC-4123
THC-4124
THC-4125
THC-4126
THC-40D4
THC-40D5
THC-41D4
THC-41D5
SL 100 NPN Transistor
bc337-40 npn transistor
transistor TE 901
Transistor BC239c
SL 100 power transistor
of transistor sl 100
Transistor BC413C
TRANSISTOR SL 100
te 901 pnp Transistor
sl 100 transistor
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PDF
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35Y4
Abstract: EH-117 lamp ion ballast tube tube 35Y4
Text: TENTATIVE 35Y4 DATA TUNG-SOL DIODE T -9 COATED UN I POTENTIAL CATHODE 2f MA X . 5_ 3 ^ HEATER MAX. 35 VOLTS 150 MA. AC OR DC 52 ANY MOUNTING POSITION 1-5_ _ I 6 _ MA X . GLASS 6UL8 8 P IN L O C K -IN THE 35Y4 IS A SINGLE DIODE IN THE LO CK-IN CONSTRUCTION INTENDED FOR HALF
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OCR Scan
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M8-210
35Y4
EH-117
lamp ion
ballast tube
tube 35Y4
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PDF
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kln105
Abstract: KLN105B KLN124A KPD410 KPD603 KPT610
Text: Infrared Light Emitting Diode Maximum Ratings Applications TYP vF TYP Po TYP Ap AA TYP ¿ iír O .? Matched <mA Pd mW) (V) If (mA) (mW) *F (mA) (nm) If (mA) (nm) If (mA) O p tical Sw itch 100 150 1.35 100 11 50 940 10 40 10 KLN124A O p tic a l Sw itch 100
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OCR Scan
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KLN105B
KPD603
KPD410
KLN124A
KPT610
KLN105B
KPD410
KLN124A
KPD603
kln105
KPT610
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PDF
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