BAV99DW
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diode SOT-363 BAV99DW SWITCHING DIODE FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance MAKING: KJG
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OT-363
OT-363
BAV99DW
150mA
BAV99DW
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PDF
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BAW56DW
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diode SOT-363 BAW56DW SWITCHING DIODE FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance MAKING: KJC
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Original
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OT-363
OT-363
BAW56DW
150mA
BAW56DW
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PDF
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BAV99BRW
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diode SOT-363 BAV99BRW SWITCHING DIODE FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance MAKING: KGJ
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Original
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OT-363
OT-363
BAV99BRW
150mA
BAV99BRW
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PDF
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BAV756DW
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diode SOT-363 BAV756DW SWITCHING DIODE FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance MAKING: KCA
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Original
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OT-363
OT-363
BAV756DW
150mA
BAV756DW
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PDF
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BAV70DW
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diode SOT-363 BAV70DW SWITCHING DIODE FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance MAKING: KJA
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Original
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OT-363
OT-363
BAV70DW
150mA
BAV70DW
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PDF
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BAW567DW
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diode SOT-363 BAW567DW SWITCHING DIODE FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance MAKING: KAC
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Original
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OT-363
OT-363
BAW567DW
150mA
BAW567DW
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diode SOT-363 BAV70DW SWITCHING DIODE FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance MAKING: KJA
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Original
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OT-363
OT-363
BAV70DW
150mA
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PDF
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LP 8029
Abstract: CQY 24 DIN 7990 diode 8638 cqy 17 BPW16N CQY36N
Text: CQY 36 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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CQY36N
BPW16N
D-74025
LP 8029
CQY 24
DIN 7990
diode 8638
cqy 17
BPW16N
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes SOT-363 BAV70DW SWITCHING DIODE FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance MAKING: KJA
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Original
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OT-363
OT-363
BAV70DW
150mA
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PDF
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BAV99DW
Abstract: No abstract text available
Text: BAV99DW SOT-363 BAV99DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current IF: 150 mA Collector-base voltage 75 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ MAKING: KJG ELECTRICAL CHARACTERISTICS (Tamb=25℃
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BAV99DW
OT-363
150mA
BAV99DW
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PDF
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BAW56DW
Abstract: No abstract text available
Text: BAW56DW SOT-363 BAW56DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current IF: 150 mA Collector-base voltage 75 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ MAKING: KJC ELECTRICAL CHARACTERISTICS (Tamb=25℃
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Original
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BAW56DW
OT-363
150mA
BAW56DW
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PDF
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BAV70DW
Abstract: No abstract text available
Text: BAV70DW SOT-363 BAV70DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current IF: 150 mA Collector-base voltage 75 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ MAKING: KJA ELECTRICAL CHARACTERISTICS (Tamb=25℃
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BAV70DW
OT-363
150mA
BAV70DW
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PDF
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LM5007
Abstract: MURA110T3 AN-1319 C1206C103K5RAC C1206C104K5RAC
Text: National Semiconductor Application Note 1319 Dennis Morgan May 2004 Introduction voltage of 9V - 75V 80V max . The bootstrap diode and high voltage N-Channel MOSFET buck switch are integrated in the IC, making the LM5007 attractive for applications where
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LM5007
LM5007
AN-1319
MURA110T3
AN-1319
C1206C103K5RAC
C1206C104K5RAC
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PDF
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G4812SS
Abstract: No abstract text available
Text: DMG4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary Features • This new generation MOSFET has been designed to minimize the onstate resistance RDS(on and yet maintain superior switching performance, making it ideal for high efficiency power management
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DMG4812SSS
DS35071
G4812SS
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LM78L05ACH
Abstract: LM78L12ACH LM78L15ACH LM78L12ACZ LM78L15ACZ NS REGULATOR IC lm78L05 LM78L05ACZ LM78L09ACZ LM78L05ACM LM78L15ACZ
Text: LM78LXX Series 3-Terminal Positive Regulators General Description Features The LM78LXX series of three terminal positive regulators is available with several fixed output voltages making them useful in a wide range of applications When used as a zener diode resistor combination replacement the LM78LXX
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LM78LXX
LM78LXX
LM78L05ACH
LM78L12ACH
LM78L15ACH
LM78L12ACZ
LM78L15ACZ NS
REGULATOR IC lm78L05
LM78L05ACZ
LM78L09ACZ
LM78L05ACM
LM78L15ACZ
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PDF
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Untitled
Abstract: No abstract text available
Text: GaAs infrared light-emitting diode SIR-33ST3F This infrared GaAs LED is housed in a compact, transparent, plastic-sealed housing. It radiates at a wavelength of 950 nm making it suitable for silicon light detectors. Although compact, it has a wide light distribution angle 91/2 = 28° .
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OCR Scan
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SIR-33ST3F
SIR-33ST3F
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PDF
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Light-emitting diode
Abstract: diode I-35 L
Text: SIR-33ST3F GaAs infrared light-emitting diode This infrared GaAs LED is housed in a compact, transparent, plastic-sealed housing. It radiates at a wavelength of 950 nm making it suitable for silicon light detectors. Although compact, it has a wide light distribution angle 01/2 = 28° .
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OCR Scan
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SIR-33ST3F
SIR-33ST3F
Light-emitting diode
diode I-35 L
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PDF
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UF3-230VAC1
Abstract: UF3-24VDC1FL kuhnke uf3 kuhnke z396.64 UF3-24VDC1 kuhnke uf3 24VDC relay UF3-24VACN UF3-230VAC UF3-230VAC1L UF2-230VAC1
Text: l rsa ive Un UF3 - 24 VDC N Relay Universal UF Relay Universal UF2/UF3 • Standard type / • Twin contacts for high contact making reliability • With LED and protection diode on request l rsa ive Un UF3 - 24 VDC N Order Code Order code U Type of relay
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11pole
UF3-230VAC1
UF3-24VDC1FL
kuhnke uf3
kuhnke z396.64
UF3-24VDC1
kuhnke uf3 24VDC relay
UF3-24VACN
UF3-230VAC
UF3-230VAC1L
UF2-230VAC1
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block diagram of diode operation
Abstract: 3687 h8 42 diode home rc circuit diagram diode h8
Text: APPLICATION NOTE H8/300H Tiny Series Power-On Reset Operation using External Circuit Introduction A reset circuit consisting of a resistor, capacitor and diode is connected externally to perform power-on reset operation. Target Device H8/3687 Contents 1. Specifications . 2
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H8/300H
H8/3687
REJ06B0112-0100Z/Rev
block diagram of diode operation
3687
h8 42 diode
home rc circuit diagram
diode h8
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PDF
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BAW56DW
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diode SOT-363 BAW56DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current 150 mA IF: Collector-base voltage 75 V VR: Operating and storage junction temperature range
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Original
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OT-363
OT-363
BAW56DW
150mA
BAW56DW
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PDF
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BAV99DW
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate DIODE SOT-363 BAV99DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current 150 mA IF: Collector-base voltage 75 V VR: Operating and storage junction temperature range
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Original
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OT-363
OT-363
BAV99DW
150mA
BAV99DW
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diode SOT-363 BAV70DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current IF: 150 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range
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Original
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OT-363
OT-363
BAV70DW
150mA
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PDF
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BAW56DW
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D SOT-363 Plastic-Encapsulated Diode SOT-363 BAW56DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current 150 mA IF: Collector-base voltage 75 V VR: Operating and storage junction temperature range
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Original
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OT-363
OT-363
BAW56DW
150mA
BAW56DW
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PDF
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LMK107
Abstract: BJ105MA-T LT3464 block diagram of schottky diode GMK212 BJ334MG-T LB 2012T100MR VLT6600 LT5503
Text: DESIGN FEATURES Micropower SOT-23 Boost with Integrated Schottky Diode Provides Output Disconnect and by Leonard Shtargot Short Circuit Protection Introduction The LT3464 is the only micropower boost converter in the industry to combine a 36V NPN power switch,
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Original
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OT-23
LT3464
40mm2
115mA
LT6600
20MHz
LT6600
1-800-4-LINEAR
LMK107
BJ105MA-T
block diagram of schottky diode
GMK212
BJ334MG-T
LB 2012T100MR
VLT6600
LT5503
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PDF
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