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    G4812SS Price and Stock

    Diodes Incorporated DMG4812SSS-13

    MOSFET N-CH 30V 8A 8SO
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    G4812SS Datasheets Context Search

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    G4812SS

    Abstract: DMG4812SSS
    Text: G4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V BR DSS Features • ID max RDS(on) TA = 25°C 15mΩ @ VGS= 10V 10.7A 18.5mΩ @ VGS= 4.5V 9.6A 30V • • • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:


    Original
    DMG4812SSS AEC-Q101 DS35071 G4812SS DMG4812SSS PDF

    g4812ss

    Abstract: DMG4812SSS
    Text: G4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V BR DSS Features • ID max RDS(on) TA = 25°C 15mΩ @ VGS= 10V 10.7A 18.5mΩ @ VGS= 4.5V 9.6A 30V • • • • DIOFET utilizes a unique patented process to monolithically


    Original
    DMG4812SSS AEC-Q101 DS35071 g4812ss DMG4812SSS PDF

    G4812SS

    Abstract: No abstract text available
    Text: G4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary Features • This new generation MOSFET has been designed to minimize the onstate resistance RDS(on and yet maintain superior switching performance, making it ideal for high efficiency power management


    Original
    DMG4812SSS DS35071 G4812SS PDF

    G4812SS

    Abstract: No abstract text available
    Text: G4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Product Summary V BR DSS • ID max RDS(on) TA = 25°C 15mΩ @ VGS= 10V 10.7A 18.5mΩ @ VGS= 4.5V 9.6A 30V • • • • DIOFET utilizes a unique patented process to monolithically


    Original
    DMG4812SSS DS35071 G4812SS PDF