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    DIODE MARKING CODE 3L Search Results

    DIODE MARKING CODE 3L Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE 3L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    diode 3L

    Abstract: diode marking code 3l
    Text: CFSH2-3L SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-882L CASE APPLICATIONS: w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH2-3L is a high quality Schottky Diode designed for applications where ultra small size and operational efficiency are


    Original     		PDF OD-882L 200mA 100mA 26-April diode 3L diode marking code 3l

    Untitled

    Abstract: No abstract text available
    Text: CFSH2-3L w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH2-3L is a high quality Schottky Diode designed for applications where ultra small size and operational efficiency are prime requirements. Packaged in a Tiny Leadless


    Original     		PDF OD-882L 200mA 100mA 26-April

    MARKING 05L

    Abstract: No abstract text available
    Text: GSOT05L-V Vishay Semiconductors Single-Line ESD-Protection in SOT23-3L Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • Space saving SOT23-3L package • AEC-Q101 qualified


    Original     		PDF GSOT05L-V OT23-3L OT23-3L AEC-Q101 2002/95/EC 2002/96/EC GSOT05L-V-G-08 18-Jul-08 MARKING 05L

    GSOT05CL-V

    Abstract: No abstract text available
    Text: GSOT05CL-V Vishay Semiconductors Two-Line ESD-Protection in SOT23-3L Features • Two-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • Space saving SOT23-3L package • AEC-Q101 qualified


    Original     		PDF GSOT05CL-V OT23-3L OT23-3L AEC-Q101 2002/95/EC 2002/96/EC GSOT05CL-V-G-08 GSOT05CL-V

    Untitled

    Abstract: No abstract text available
    Text: Datasheet N-Channel Enhancement Mode MOSFET Features TDM2302 Pin Description 20V/5A , RDS ON =20mΩ(typ.) @ VGS =4.5V RDS(ON) =40mΩ(typ.) @ VGS =2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)


    Original     		PDF TDM2302 OT23-3L TDM2302â TDM2302

    Untitled

    Abstract: No abstract text available
    Text: Datasheet P-Channel Enhancement Mode MOSFET Features z TDM2301 Pin Description -20V/-3A , RDS ON =72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V z Super High Dense Cell Design z Reliable and Rugged z Lead Free Available (RoHS Compliant) Top View of SOT23-3L


    Original     		PDF TDM2301 -20V/-3A OT23-3L TDM2301â TDM2301

    Untitled

    Abstract: No abstract text available
    Text: Datasheet P-Channel Enhancement Mode MOSFET Features z TDM2305 Pin Description -20V/-3.5A , RDS ON =60mΩ(typ.) @ VGS =-4.5V RDS(ON) =70mΩ(typ.) @ VGS =-2.5V R =83mΩ(typ.) @ V DS(ON) z GS =-1.8V Super High Dense Cell Design Top View of SOT23-3L z Reliable and Rugged


    Original     		PDF TDM2305 -20V/-3 OT23-3L TDM2305â

    824022

    Abstract: No abstract text available
    Text: Specification for release Customer : Ordercode: Description: Package: 824022 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - bidirectional • Provide ESD Protection for each line to


    Original     		PDF OT23-3L 5/50ns) UL94V-0 D-74638 824022

    824022

    Abstract: WE-TVS W22XY sot23 marking JB tlp 8a dut79
    Text: Specification for release Customer : Ordercode: Description: Package: 824022 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2009-02-03 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - bidirectional • Provide ESD Protection for each line to


    Original     		PDF OT23-3L 5/50ns) OT23-3L UL94V-0 D-74638 824022 WE-TVS W22XY sot23 marking JB tlp 8a dut79

    C5440

    Abstract: No abstract text available
    Text: Specification for release Customer : Ordercode: Description: Package: 824021 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - unidirectional • ESD Protection for 1 Line - bidirectional


    Original     		PDF OT23-3L 5/50ns) UL94V-0 D-74638 C5440

    Untitled

    Abstract: No abstract text available
    Text: Datasheet N-Channel Enhancement Mode MOSFET Features TDM2302S Pin Description 20V/3A , RDS ON =50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)


    Original     		PDF TDM2302S OT23-3L TDM2302Sâ TDM2302S 23-3L

    Untitled

    Abstract: No abstract text available
    Text: Datasheet P-Channel Enhancement Mode MOSFET Features TDM2301S Pin Description -20V/-1.5A , RDS ON =130mΩ(typ.) @ VGS=-4.5V RDS(ON)=170mΩ(typ.) @ VGS=-2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)


    Original     		PDF TDM2301S -20V/-1 OT23-3L TDM2301Sâ TDM230 23-3L

    WE-TVS

    Abstract: 824021 74638 marking JB sot23 wetvs
    Text: Specification for release Customer : Ordercode: Description: Package: 824021 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2009-02-03 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - unidirectional • ESD Protection for 1 Line - bidirectional


    Original     		PDF OT23-3L 5/50ns) OT23-3L UL94V-0 D-74638 WE-TVS 824021 74638 marking JB sot23 wetvs

    Untitled

    Abstract: No abstract text available
    Text: STK0765F Semiconductor Power MOSFET Features • Low Crss • Low gate charge. • Low leakage current Ordering Information Type NO. STK0765F Marking STK0765 Outline Dimensions Package Code TO-220F-3L unit : mm PIN Connections 1. Gate 2. Drain 3. Source KST-H038-003


    Original     		PDF STK0765F STK0765 O-220F-3L KST-H038-003

    auk stk0765

    Abstract: stk0765 STK0765F
    Text: STK0765F Semiconductor Power MOSFET Features • Low Crss • Low gate charge. • Low leakage current Ordering Information Type NO. Marking STK0765F Package Code STK0765 TO-220F-3L Outline Dimensions unit : mm Φ3.05~3.35 3.46 Typ. 9.10~9.30 2.60~3.00 1.07 Min.


    Original     		PDF STK0765F STK0765F STK0765 O-220F-3L KST-H038-003 auk stk0765

    b83006

    Abstract: diode schottky b83006 B83-006 diode b83
    Text: E R B83-006 2A : Outline Drawings I SCHOTTKY BARRIER DIODE : Features • vP IS/jv : Marking Low VF Ä 7 - 3 - K : Sit Color code : Super high speed switching. High reliability by planer design Abridged type name 3LŒ? 7 * • E IS I : Applications Voltage ciass


    OCR Scan     		PDF B83-006 I95t/R89) b83006 diode schottky b83006 diode b83

    ERB83-006

    Abstract: Collmer SC A349
    Text: E R B83-006 2A : Outline Drawings I SCHOTTKY BARRIER DIODE : Features • vP IS/jv : Marking Low VF Ä 7 - 3 - K : Sit Color code : Super high speed switching. High reliability by planer design Abridged type name 3LŒ? 7 * • E IS I : Applications V oltage ciass


    OCR Scan     		PDF ERB83-006 Collmer SC A349

    A348

    Abstract: ERB83-006 jv marking a349
    Text: E R B83-006 2A : Outline Drawings I SCHOTTKY BARRIER DIODE : Features • vP IS/jv : Marking Low VF Ä 7 - 3 - K : Sit Color code : Super high speed switching. High reliability by planer design Abridged type name 3LŒ? 7 * • E IS I : Applications V oltage ciass


    OCR Scan     		PDF ERB83-006 A348 jv marking a349

    h51 diode

    Abstract: No abstract text available
    Text: ERB44 ia  jÈ S S S f t ^ V i—K • W fé '+ fè : Outline Drawings FAST RECOVERY DIODE ■ ¡E H I : Features :7jv : Marking High voltage by mesa design. • ftflM R tt # 7 - 3 - K: m High reliability Color code : Green ■ E J ii : Applications Abridged type name


    OCR Scan     		PDF ERB44( 10msS Tg30S I95t/R89) h51 diode

    Untitled

    Abstract: No abstract text available
    Text: Super Fast Recovery Diode Axial Diode M im S3L20U OUTLINE Unit ! mm Package : AX14 W eight 1.06g Typ 200V 3A Feature 26.5 26.5 • Low Noise • trr=35ns • trr=35ns I Main Use * tsniiíiiijíBii^ I*:«: • Fly W heel 3L U 05 • H om e Appliance, Office Automation, Lighting


    OCR Scan     		PDF S3L20U S3L20