Si5941DU
Abstract: si5941
Text: Si5941DU New Product Vishay Siliconix Dual P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.066 @ VGS = –4.5 V –6 0.103 @ VGS = –2.5 V –6 0.151 @ VGS = –1.8 V –6 VDS (V) –8 D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5941DU
Si5941DU-T1
51935--Rev.
Sep-05
si5941
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Untitled
Abstract: No abstract text available
Text: Si5941DU New Product Vishay Siliconix Dual P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.066 @ VGS = –4.5 V –6 0.103 @ VGS = –2.5 V –6 0.151 @ VGS = –1.8 V –6 VDS (V) –8 D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5941DU
Si5941DU-T1
Sep-05
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si5857
Abstract: No abstract text available
Text: Si5857DU New Product Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.058 at VGS = –4.5 V 6 0.100 at VGS = –2.5 V 6 VDS (V) –20 D LITTLE FOOTr Plus Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5857DU
60414--Rev.
20-Mar-06
si5857
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Si5857DU-T1-GE3
Abstract: No abstract text available
Text: Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Power MOSFET
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Si5857DU
2002/95/EC
18-Jul-08
Si5857DU-T1-GE3
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si8812
Abstract: si88 AGS3
Text: New Product Si8812DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A)a 0.059 at VGS = 4.5 V 3.2 0.061 at VGS = 3.7 V 3.1 0.065 at VGS = 2.5 V 3.0 0.085 at VGS = 1.8 V 2.7 • • • • • Qg (Typ.)
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Si8812DB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si8812
si88
AGS3
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Untitled
Abstract: No abstract text available
Text: New Product Si2312CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0318 at VGS = 4.5 V 6a 0.0356 at VGS = 2.5 V 6a 0.0414 at VGS = 1.8 V 5.6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition
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Si2312CDS
2002/95/EC
OT-23
Si2312CDS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: DSA300I45NA preliminary Schottky Diode Gen ² F = High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Backside: Isolated 2 1 3 4 Features / Advantages: Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour
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DSA300I45NA
OT-227B
60747and
20120907a
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MARKING code mfx stmicroelectronics
Abstract: STMicroelectronics marking code date 645
Text: SM15T6V8A/220A SM15T6V8CA/220CA TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 1500 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8 V to 220 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION
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SM15T6V8A/220A
SM15T6V8CA/220CA
MARKING code mfx stmicroelectronics
STMicroelectronics marking code date 645
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zener diode 2v4
Abstract: zener diode 6c2 diode glass 5b6
Text: TLZ-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • Very sharp reverse characteristic Low reverse current level Very high stability Low noise High reliability AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC
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AEC-Q101
2002/95/EC
2002/96/EC
OD-80
GS18/10K
10K/box
GS08/2
11-Mar-11
zener diode 2v4
zener diode 6c2
diode glass 5b6
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231B DIODE
Abstract: Si8435DB
Text: Si8435DB Vishay Siliconix New Product P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = - 4.5 V - 10.0 VDS (V) - 20 0.048 at VGS = - 2.5 V - 9.32 0.058 at VGS = - 1.8 V - 8.48 0.075 at VGS = - 1.5 V - 7.45 Qg (Typ) • TrenchFET Power MOSFET
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Si8435DB
08-Apr-05
231B DIODE
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5B1 zener diode
Abstract: 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12
Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)
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MM3ZB39
OD-323
OD-323
5B1 zener diode
6b2 zener diode
zener diode 4B3
B20 zener diode
smd diode b13
zener diode b27
b16 zener
b36 smd diode
zener b27
smd diode code B12
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Si8445DB
Abstract: No abstract text available
Text: Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.084 at VGS = - 4.5 V - 9.8 0.100 at VGS = - 2.5 V - 9.0 VDS (V) - 20 0.120 at VGS = - 1.8 V - 5.0 0.155 at VGS = - 1.5 V - 2.0 0.495 at VGS = - 1.2 V - 0.5
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Si8445DB
08-Apr-05
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BZA900AVL
Abstract: BZA956AVL BZA962AVL BZA968AVL Transient Voltage Suppressor diode application no cz 085
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D743 BZA900AVL series Quadruple low capacitance ESD suppressor Product specification Supersedes data of 2003 Apr 01 2003 Apr 15 Philips Semiconductors Product specification Quadruple low capacitance ESD suppressor FEATURES
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M3D743
BZA900AVL
OT665
SCA75
613514/02/pp12
BZA956AVL
BZA962AVL
BZA968AVL
Transient Voltage Suppressor diode application no
cz 085
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J-STD-020A
Abstract: Si8415DB
Text: Si8415DB New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.037 @ VGS = −4.5 V −7.3 0.046 @ VGS = −2.5 V −6.6 0.060 @ VGS = −1.8 V −5.8 Qg (Typ) 19 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging
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Si8415DB
Si8415DB-T1--E1
MA340
S-50037--Rev.
17-Jan-05
J-STD-020A
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block diagram of crusoe processor
Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
Text: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz
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TM55E/TM58E
TM58EX-933
58EXAE093321
TM58EL-800
58ELAD080021
TM55EL-667
55ELAC066721
TM55E/TM58E
block diagram of crusoe processor
bios programmer
SDR100
TM5800
TM58EL-800
crusoe
"sdr sdram" design guideline
TM58E
SDR100 sdram dimm
TM55EL-667
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5800c
Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Text: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V
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TM5500/TM5800
TM5800-933
CoolRun80
5800C093310
TM5800-867
5800C086710
TM5800-800
5800A080010
TM5500-800
5800c
bios programmer
block diagram of crusoe processor
TM5500-800
chip morphing
TM5800 feature
sdr sdram pcb layout
TM5800
TM5800-733
TM5800-800
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-12509 Revision. 3 Product Standards Schottky Barrier Diode DB5S406K0R DB5S406K0R Silicon epitaxial planar type Unit: mm For high speed switching circuits DB4J406K in SSMini5 type package 1.6 0.2 5 Features 0.13 4 1.2 1.6 y Small reverse current IR
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TT4-EA-12509
DB5S406K0R
DB4J406K
UL-94
DB2S406
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8409 diode
Abstract: Si8409DB 8409 J-STD-020A Si8401DB S-41816 diode 8409 marking 8409
Text: Si8409DB New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.046 @ VGS = −4.5 V −6.3 0.065 @ VGS = −2.5 V −5.3 Qg (Typ) 17 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging
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Si8409DB
Si8401DB
Si8409DB-T1--E1
08-Apr-05
8409 diode
8409
J-STD-020A
S-41816
diode 8409
marking 8409
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0x8102
Abstract: 2N3904 2N3906 PNP switching transistor 2N3906
Text: aSC7521A LOW-VOLTAGE 1-WIRE DIGITAL TEMPERATURE SENSOR PRODUCT SPECIFICATION Pin Configuration Product Description The aSC7521A is a high-precision CMOS temperature sensor and voltage monitor with Simple Serial Transport SST compatible serial digital interface, intended for use in PC
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aSC7521A
aSC7521A
70A05011
0x8102
2N3904
2N3906
PNP switching transistor 2N3906
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si88
Abstract: SI8808DB-T2-E1 si8808
Text: New Product Si8808DB Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.095 at VGS = 4.5 V 2.5 0.105 at VGS = 2.5 V 2.3 0.120 at VGS = 1.8 V 2.2 0.165 at VGS = 1.5 V 1.9 • • • • • Qg (Typ.)
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Si8808DB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si88
SI8808DB-T2-E1
si8808
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si8805
Abstract: si88
Text: New Product Si8805EDB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A)a 0.068 at VGS = - 4.5 V - 3.1 0.088 at VGS = - 2.5 V - 2.7 0.155 at VGS = - 1.5 V - 2.1 0.290 at VGS = - 1.2 V - 0.5 • • • •
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Si8805EDB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si8805
si88
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irfp064n
Abstract: No abstract text available
Text: International ^Rectifier P D 9 .1 3 8 3 IRFP064N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 5 5 V
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IRFP064N
3150utram
MA55455
irfp064n
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Untitled
Abstract: No abstract text available
Text: hternational I sr]Rectifier PD91306 IRFIZ46N preliminary HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5K V R M S Sink to Lead Creepage Dist. = 4.8m m Fully Avalanche Rated Vdss = 55 V
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IRFIZ46N
Liguria49
QQ237Q1
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Untitled
Abstract: No abstract text available
Text: International po-smnt IO R Rectifier IR F 7 4 2 1 D 1 preliminary FETKY MOSFET andf Schottky Diode • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation 5 T echnology SO-8 Footprint
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554S2
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