philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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MARKING CODE f5
Abstract: No abstract text available
Text: 1SS370W Silicon Epitaxial Planar Diode For high voltage and high speed switching applications 3 1 2 Marking Code: F5 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 250 V Reverse Voltage VR 200 V Average Forward Current
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1SS370W
MARKING CODE f5
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MARKING CODE f5
Abstract: 1SS370W
Text: 1SS370W Silicon Epitaxial Planar Diode For high voltage and high speed switching applications 3 1 2 Marking Code: F5 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 250 V Reverse Voltage VR 200 V Average Forward Current
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1SS370W
MARKING CODE f5
1SS370W
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zener diode 4.7V
Abstract: marking h2 SOD-323 ZENER Zener Diode SOD-323 marking code 2b marking 2h SOD-323 ZENER A25 ZENER DIODE E1 sod323 diode marking code 2E zener diode 4.7V current rating diode F4 8a marking code 8A
Text: Surface Mount Zener Diode MMSZ52XXBS Series A suffix of "-C" specifies halogen-free 200mW, SOD-323 Electrical Characteristics @ T A=25 C unless otherwise specified Zener Voltage Range Note 1 Type Number Marking Code Nom V 2.4 2.5 2.7 3.0 3.3 3.6 3.9 4.3
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MMSZ52XXBS
200mW,
OD-323
150OC
01-Jun-2002
zener diode 4.7V
marking h2 SOD-323 ZENER
Zener Diode SOD-323 marking code 2b
marking 2h SOD-323
ZENER A25
ZENER DIODE E1
sod323 diode marking code 2E
zener diode 4.7V current rating
diode F4 8a
marking code 8A
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zener diode E2
Abstract: ZENER DIODE E1 zener diode J3 DIODE H5 c2 marking C5 87 marking code MM zener MMSZ5240 MMSZ5257B RoHS MMSZ5221B MMSZ5222B
Text: Surface Mount Zener Diode MMSZ52XXB Series A suffix of "-C" specifies halogen & lead-free 500mW,5% SOD-123 Electrical Characteristics @ T A=25 C unless otherwise specified Type Number Marking Code Zener Voltage Range Note 1 Nom V 2.4 2.5 2.7 3.0 3.3 3.6
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MMSZ52XXB
500mW
OD-123
01-Jun-2002
zener diode E2
ZENER DIODE E1
zener diode J3
DIODE H5 c2
marking C5 87
marking code MM zener
MMSZ5240
MMSZ5257B RoHS
MMSZ5221B
MMSZ5222B
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Untitled
Abstract: No abstract text available
Text: 200mW ZENER DIODES UDZ SERIES • LOW NOISE AND LOW LEAKAGE DESIGN • REPLACEMENT FOR DTZ SERIES, WITH TIGHTER VOLTAGE SPREADS • SUPPLIED IN NEW UMD2 PACKAGE, WHICH FITS DTZ FOOTPRINTS UDZ SERIES 200mW ZENER DIODE VZ VZ ZZ @ IZ ZZK @ IZ IR @ VR SQP Part No. Marking* V min
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200mW
UDZ36B
40msec.
178mm
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f5n50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD F5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC F5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the
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F5N50
F5N50
QW-R502-A90
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diode 31 DF
Abstract: Kemet CAPACITOR DATE CODE MARKING suppressor diode smd IEC60063 100nF 63V polyester capacitor capacitor 100nf 63v MKT capacitor mkt 100nf 4019D
Text: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression
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20x10-4
1x10-9
diode 31 DF
Kemet CAPACITOR DATE CODE MARKING
suppressor diode smd
IEC60063
100nF 63V polyester capacitor
capacitor 100nf 63v MKT
capacitor mkt 100nf
4019D
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Untitled
Abstract: No abstract text available
Text: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression
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20x10-4
1x10-9
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD F5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC F5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the
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F5N50
F5N50
QW-R502-A90
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Untitled
Abstract: No abstract text available
Text: THUR S F5005CT S F506CT SUPER FAST GLASS PASSIVATED RECTIFIERS AB 0.185 4.70 0.154(3.91) 0.415(10.54) Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Idedlly suited for freewheeling diode power factor correction applications
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F5005CT
F506CT
SF5005CT
SF5005
-55to
0V-200V
00V-400V
450us
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capacitor 100nf 63v MKT
Abstract: IEC60063 DIODE smd marking AA diode marking df diode smd marking ck DIODE marking EG 94 kemet c.93 suppressor diode smd Diode HDB 5
Text: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression
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20x10-4
capacitor 100nf 63v MKT
IEC60063
DIODE smd marking AA
diode marking df
diode smd marking ck
DIODE marking EG 94
kemet c.93
suppressor diode smd
Diode HDB 5
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D1980
Abstract: 2sd darlington MARKING CODE f5 diode marking code 15h marking 7T transistor TRANSISTOR CD 263 2SD1980 2SD1980F5 damper diode darlington npn transistor t f5 j
Text: 2SD1980F5 Transistor, NPN, Darlington pair Features • available in CPT F5 SC-63 package • package marking: D1980-AQ, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) • damper diode is incorporated
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2SD1980F5
SC-63)
D1980
2SD1980
K35kQ
R2se300Q
2SD1980F5
2sd darlington
MARKING CODE f5
diode marking code 15h
marking 7T transistor
TRANSISTOR CD 263
2SD1980
damper diode darlington npn
transistor t f5 j
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b1316
Abstract: B131-6
Text: Transistor, PNP, Darlington pair 2 S B 1 3 1 6 F 5 Features • available in CPT F5 SC-63 package • package marking: B1316*Q , where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated
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2SB1316F5
SC-63)
B1316
2SB1316F5
2SB1316F5,
B131-6
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Untitled
Abstract: No abstract text available
Text: ERC04 F (1.5A) Outline Drawings GENERAL USE RECTIFIER DIODE ) Features • Compact size, light weight • S U f fiii I ^ tk : Marking High reliability ! Applications Abridged type name General purpose rectifier applications V? | ° l• B E ? 7* Voltage class
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ERC04
eaTe30
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Untitled
Abstract: No abstract text available
Text: S C 1 7 i .OA : Outline Drawings k _ GENERAL USE RECTIFIER DIODE : Features ESD-Proof • * B S 8* A f » m Surface m ount device •K « « t4 i/jv : Marking High reliability • Applications • V iSftd fE O H General purpose rectifier applications
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19S24
I95t/R89)
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R8915
Abstract: ERC25 marking AJ 7
Text: ERC25 i .2A I W I W i i : Outline Drawings FAST RECOVERY DIODE : Features IR High voltage by mesa design. * Marking tf High reliability * 7 - n - r :W Color code : Green : Applications Abridged type name *V HiBE? 5* Voltage class High speed sw itching. - V -r-9
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ERC25
100C3C3CDO
R8915
marking AJ 7
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151S5
Abstract: No abstract text available
Text: ERC05 1 .2A - * ’ Outline Drawings _ GENERAL USE R EC TIFIER DIODE ! Features • If— Hi gh surge current • Sift fl 14 • S tf I Marking High reliability : Applications A 7 - 3 - K : fi Color code : Orange • V X S tifc General purpose rectifier applications
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ERC05
l95t/R89
151S5
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Untitled
Abstract: No abstract text available
Text: ERB35 ia I Outline Drawings FAST RECOVERY DIODE : Features • iê/K : Marking Soft recovery, low noise • A f t f f i't i High reliability * —3 — K $ Cole r code : Applications Abridged type n am e^' DP f t -> Silver s. 1 ^ O ÍV - Í- 'T - Í ft-
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ERB35(
I95t/R89)
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RA83
Abstract: E130L ERA83-004 T151 T460
Text: ERA83-004 ia : Outline Drawings I '> a ^ + - / < iJ 7 r y - f * - K SCH O TTKY BARRIER DIODE I # « : Features »ifeV F : Marking Low V f S uper high speed switching. SfEnfe : Ö ••7\'— ►► ► ►► 4 0 1 High reliability by planer design. ►& 'J W
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ERA83-004
500ns,
l95t/R89
RA83
E130L
T151
T460
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Untitled
Abstract: No abstract text available
Text: ERD31 1.5A : Outline Drawings FAST RECOVERY DIODE : Features • Ü /]v : Marking Large current High voltage by mesa design. DKEnfe: W • S fS H S tt f i ' j — K ?—ÿ High reliability 0 3 1 - 0 4 pi . . . . 1 -1 — : Applications • M H z* D-y !±e : 4=6]. T6;
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ERD31
5tvlZaTS30S3^
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ERB83-004
Abstract: diode ft 344
Text: E R 8 B 3 - 0 0 4 1 7 A I : Outl i ne Drawings SCHOTTKY BARRIER DIODE • 4 $ ^ : Features • 1&VF : Marking Low V F #7-3-1' : SH Super high speed switching. • - f ls - ir - Color code : ttflil-JC S& fSSRtt w High reliability by planer design, Abridged type name
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ERB83-004
diode ft 344
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ERD29
Abstract: F553 T151 T460 T810
Text: ERD29 2 .5A M B N 'iS : Outline Drawings FAST RECOVERY DIODE : Features : Marking Large current High voltage by mesa design, Ä 7 - 3 - K :« C o lo r c o d e : G re e n • f if f K H i High reliability .t y p e nam e V o lt a g e c la s s A D r ia g e a
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ERD29
l95t/R89
F553
T151
T460
T810
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