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    MOSFET MARK H1

    Abstract: 2SK2762-01L 2SK2762-01S
    Text: X S P E C I F I C A T I O N DEVICE NAME : TYPE NAJE : Powe r M O SF ET 2 S K 2 7 6 2 - Q 1 L . S SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED P i ii¡ F l o r t r i r 1tri DRAWN CHECKED


    OCR Scan     		2SK2762-01L EaTe30 MOSFET MARK H1 2SK2762-01L 2SK2762-01S PDF

    Untitled

    Abstract: No abstract text available
    Text: ERC04 F (1.5A) Outline Drawings GENERAL USE RECTIFIER DIODE ) Features • Compact size, light weight • S U f fiii I ^ tk : Marking High reliability ! Applications Abridged type name General purpose rectifier applications V? | ° l• B E ? 7* Voltage class


    OCR Scan     		ERC04 eaTe30 PDF

    IJP LC 300

    Abstract: 2MBI75L-120 M216 T151 T930
    Text: 2MBI75L-120 75A IGBT (L SERIES) -Jl> IGBT MODULE : Features • High Speed S w itching • l&tSiflWGE Low Saturation V oltage • « £ E K » ( M O S ^ - H U f i) • Voltage Drive Variety of Power Capacity Series : Applications <f —$ • A C , D C I f —& 7 > ' ?


    OCR Scan     		2MBI75L-120 11S19^ I95t/R89) Shl50 IJP LC 300 M216 T151 T930 PDF