pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
|
Original
|
PDF
|
|
KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
|
Original
|
PDF
|
2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
|
khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
|
Original
|
PDF
|
2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
|
Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
|
Original
|
PDF
|
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
|
"laser diode Driver Circuit"
Abstract: SFP Laser Driver
Text: Signal Conditioning/Calibration and Control Products X9530 Temperature Compensated Laser Diode Controller Description • SONET and SDH Transmission System Laser Diode Bias Control • 1G and 10G Ethernet, and Fibre Channel Laser Diode Driver Circuits The X9530 is a highly integrated laser diode bias controller
|
Original
|
PDF
|
X9530
256-tap,
100-tap,
64-tap,
256-tap
1024-tap
14-lead
"laser diode Driver Circuit"
SFP Laser Driver
|
Untitled
Abstract: No abstract text available
Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC MP2-202S Mar. 2008 Fast Recovery Diode General Description MP2-202S is an ultrafast recovery diode of low leak current. Life time killer selection realizes low leak current at high temperature. Package Applications
|
Original
|
PDF
|
MP2-202S
MP2-202S
100mA
/200mA
|
zener diode 12c
Abstract: No abstract text available
Text: Part: MPTE-12C Series: MPTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00
|
Original
|
PDF
|
MPTE-12C
10x160Â
10x1000
10x1000Â
zener diode 12c
|
Untitled
Abstract: No abstract text available
Text: Part: MPTE-45C Series: MPTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00
|
Original
|
PDF
|
MPTE-45C
10x160Â
10x1000
10x1000Â
|
diode zener 22c
Abstract: No abstract text available
Text: Part: MPTE-22C Series: MPTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00
|
Original
|
PDF
|
MPTE-22C
10x160Â
10x1000
10x1000Â
diode zener 22c
|
Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS720MC ZX3CD3S1M832 MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-40V; RSAT = 104m ; C = -3A
|
Original
|
PDF
|
ZXTPS720MC
ZX3CD3S1M832
|
Untitled
Abstract: No abstract text available
Text: Part: MPTE-8C Series: MPTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 50.00 Maximum Temperature Max Temp (°C ) 0.00
|
Original
|
PDF
|
10x160Â
10x1000
10x1000Â
|
18c zener diode
Abstract: No abstract text available
Text: Part: MPTE-18C Series: MPTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00
|
Original
|
PDF
|
MPTE-18C
10x160Â
10x1000
10x1000Â
18c zener diode
|
12 v 1500 mA battery
Abstract: No abstract text available
Text: Part: MPTE-15C Series: MPTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00
|
Original
|
PDF
|
MPTE-15C
10x160Â
10x1000
10x1000Â
12 v 1500 mA battery
|
Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTNS618MC ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A
|
Original
|
PDF
|
ZXTNS618MC
ZX3CDBS1M832
|
|
|
Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS717MC ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A
|
Original
|
PDF
|
ZXTPS717MC
ZX3CD1S1M832
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate DIODE DK4148NND03 SWITCHING DIODE - WBFBP-03B TOP DESCRIPTION Epitaxial planar Silicon diode 1.2x1.2×0.5 unit: mm + FEATURES Fast Switching Speed Ultra-Small Surface Mount Package
|
Original
|
PDF
|
WBFBP-03B
DK4148NND03
WBFBP-03B
150mA
|
T2N3904
Abstract: No abstract text available
Text: LM95221 LM95221 Dual Remote Diode Digital Temperature Sensor with SMBus Interface Literature Number: SNIS134A LM95221 Dual Remote Diode Digital Temperature Sensor with SMBus Interface General Description The LM95221 is a dual remote diode temperature sensor in
|
Original
|
PDF
|
LM95221
LM95221
SNIS134A
MMBT3904
T2N3904
|
MPL-102S
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. MPL-102S 1. Scope The present specifications shall apply to Sanken silicon diode MPL-102S. 2. Outline Type Silicon Diode Structure Resin Molded Applications Pulse Rectification, etc 3. Flammability UL94V-0 Equivalent 060511 1／4
|
Original
|
PDF
|
MPL-102S
MPL-102S.
UL94V-0
10msec.
MPL-102S
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters
|
Original
|
PDF
|
MPEN-230AF
Package---TO-262
100Vguarantee
0E-01
0E-02
0E-03
D01-006EA-051202
|
KA2 DIODE
Abstract: KA2 AND DIODE DK16LLD03
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate DIODE DK16LLD03 SWITCHING DIODE - WBFBP-03D TOP DESCRIPTION Epitaxial planar Silicon diode 1.0x1.0×0.5 unit: mm + FEATURES Fast Switching Speed Ultra-Small Surface Mount Package
|
Original
|
PDF
|
WBFBP-03D
DK16LLD03
WBFBP-03D
150mA
KA2 DIODE
KA2 AND DIODE
DK16LLD03
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate DIODE DK4148TTD03 SWITCHING DIODE - WBFBP-03A TOP DESCRIPTION Epitaxial planar Silicon diode 1.6x1.6×0.5 unit: mm + FEATURES Fast Switching Speed Ultra-Small Surface Mount Package
|
Original
|
PDF
|
WBFBP-03A
DK4148TTD03
WBFBP-03A
150mA
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate DIODE DK4148LLD03 SWITCHING DIODE - WBFBP-03D TOP DESCRIPTION Epitaxial planar Silicon diode 1.0x1.0×0.5 unit: mm + FEATURES Fast Switching Speed Ultra-Small Surface Mount Package
|
Original
|
PDF
|
WBFBP-03D
DK4148LLD03
WBFBP-03D
150mA
|
MPN3412
Abstract: MPN3411
Text: MPN3411 SILICON PIN ATTENUATOR DIODE SILICON PIN ATTENUATOR DIODE . . . designed prim arily as a general purpose attenuator diode. S u p plied in pop ular iow -inductance, M in i-L plastic package fo r low cost, high-volum e co n su m e r a n d industrial requirem ents.
|
OCR Scan
|
PDF
|
MPN3411
MPN3412
MPN3411
|
triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD
|
OCR Scan
|
PDF
|
1S2835
1S2836
1S2837
1S2838
1SS123
1SS220
1SS221
1SS222
1SS223
2SA811A
triac tic 236
SCR U 537
MP25 transistor
transistor su 312
GA1L32
3 pin mini mold transistor
2SJ19
FA114M
2SA1611
Z 103 TRIAC
|
