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Abstract: No abstract text available
Text: US-Lasers: 904nm-5mW - Infrared Laser Diode and Infrared Diode Laser . Page 1 of 1 US-Lasers: 904nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure
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904nm-5mW
904nm
com/n904nm5m
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904nm laser diode
Abstract: 904nm N904-10
Text: n904nm 10mW Laser Diode NVG, INC. INFRARED LASER DIODES Technical Data MODEL # N904-10 INFRARED LASER DIODE ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 904nm (Typ.) Optical Power: 10mW CW Threshold Current: 25mA (Typ.)
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n904nm
N904-10
904nm
904nm laser diode
904nm
N904-10
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904nm laser diode
Abstract: 904nm N904 Photo DIODE (any type) datasheet INFRARED DIODES N904-5 laser diode 5mw
Text: n904nm 5mW Laser Diode NVG, INC. INFRARED LASER DIODES Technical Data MODEL # N904-5 INFRARED DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 904nm (Typ.) Optical Power: 5mW CW Threshold Current: 20mA (Typ.)
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n904nm
N904-5
904nm
904nm laser diode
904nm
N904
Photo DIODE (any type) datasheet
INFRARED DIODES
N904-5
laser diode 5mw
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N980-15
Abstract: infrared diode
Text: n950nm 15mW Laser Diode NVG, INC. INFRARED LASER DIODES MODEL # N980-15 Technical Data INFRARED DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 980nm (Typ.) Optical Power: 15mW CW Threshold Current: 20mA (Typ.)
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n950nm
N980-15
980nm
N980-15
infrared diode
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904nm laser diode
Abstract: 904nm laser diode 30mw N904-30
Text: n904nm 30mW Laser Diode NVG, INC. INFRARED LASER DIODES Technical Data MODEL # N904-30 INFRARED LASER DIODE ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 904nm (Typ.) Optical Power: 30mW CW Threshold Current: 25mA (Typ.)
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n904nm
N904-30
904nm
904nm laser diode
904nm
laser diode 30mw
N904-30
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1000lux
Abstract: Tyntek
Text: Si Photo-diode Chip－ TK N90PD 1. Scope •The specification applies to PIN silicon photo-diode chips. • Type：TK N90D 2. Structure •PIN planar type. •Electrode topside（cathode）：Aluminum. backside（anode ）： Gold alloy. 3. Size •Chip size
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N90PD
015mm)
2856K
1000Lux
Tel886-3-5781616
Fax886-3-5780545
Tel886-37-582997
Tyntek
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FD600R06ME3_S2
Abstract: QS700
Text: Technische Information / technical information FD600R06ME3_S2 IGBT-Module IGBT-modules EconoDUAL 3 Chopper Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled Diode EconoDUAL™3 chopper module with the trench/fieldstop IGBT3 and Emitter Controlled diode
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FD600R06ME3
FD600R06ME3_S2
QS700
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diode rj 93
Abstract: IHD06N60RA B127 9C13 Z8B00003328 bk 36
Text: IHD06N60RA Soft Switching Series Reverse conducting IGBT with monolithic body diode C • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution
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IHD06N60RA
diode rj 93
IHD06N60RA
B127
9C13
Z8B00003328
bk 36
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FS50R12KT3
Abstract: No abstract text available
Text: Technische Information / technical information FS50R12KT3 IGBT-Module IGBT-modules EconoPACK 2 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode EconoPACK™2 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FS50R12KT3
FS50R12KT3
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FS50R12KT3
Abstract: 60HP
Text: Technische Information / technical information FS50R12KT3 IGBT-Module IGBT-modules EconoPACK 2 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode EconoPACK™2 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FS50R12KT3
FS50R12KT3
60HP
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BC237
Abstract: marking code N9 8-pin
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode DAN222 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90
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416/SC
DAN222
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
marking code N9 8-pin
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FF200R12KT4
Abstract: diode T-71
Text: Technische Information / technical information FF200R12KT4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und optimierter EmCon Diode 62mm C-series module with fast trench/fieldstop IGBT4 and optimized EmCon diode IGBT-Wechselrichter / IGBT-inverter
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FF200R12KT4
FF200R12KT4
diode T-71
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SC-89
Abstract: diode marking N9 DAN222 n923 diode N9
Text: WEITRON WAN222 Surface Mount Switching Diode SWITCHING DIODE 100m AMPERRES 80 VOLTS Features: *Extremely High Switching Speedff *Low Reverse Leakage Current *Small Outline Surface Mount SC-89 Package *High Reliability SC-89 SOT-523F Applications: Ultra High Speed Switching
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WAN222
SC-89
SC-89
OT-523F)
50BSC
10-Jul-09
DAN222
diode marking N9
DAN222
n923
diode N9
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MV104
Abstract: 150L max3742 semiconductor mv104
Text: MOTOROLA SEMICONDUCTOR o TECHNICAL Silicon ~ning Order this document bv MV104~ DATA F Diode — This device is designed for FM tuning, general frequency control and tuning, or any top–of–theline application requiring back–to–back diode configurations for minimum
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MV104~
140W1
602-2H609
MV1041D
MV104
150L
max3742
semiconductor mv104
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ZENER DIODE M5
Abstract: zener diode n8 Diode marking m7 zener n7 diode 24 M7 zener marking of m7 diodes N6 marking code zener diode M7 n2 Diode Zener
Text: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. ULTRAmini LOW LEVEL ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded
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CMOZ43L
350mW,
OD-523
CMOZ20L
CMOZ22L
CMOZ24L
CMOZ27L
CMOZ30L
CMOZ33L
CMOZ36L
ZENER DIODE M5
zener diode n8
Diode marking m7
zener n7
diode 24
M7 zener
marking of m7 diodes
N6 marking code
zener diode M7
n2 Diode Zener
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DAN222M3T5G
Abstract: m1n9
Text: DAN222M3T5G Product Preview Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−723 package which is designed for low
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DAN222M3T5G
OT-723
DAN222M3/D
DAN222M3T5G
m1n9
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NSDEMN11XV6T1
Abstract: NSDEMN11XV6T1G NSDEMN11XV6T5 NSDEMN11XV6T5G diode N9
Text: NSDEMN11XV6T1, NSDEMN11XV6T5 Common Cathode Quad Array Switching Diode This Common Cathode Epitaxial Planar Quad Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−563 package which is designed for low power surface mount
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NSDEMN11XV6T1,
NSDEMN11XV6T5
OT-563
NSDEMN11XV6T1/D
NSDEMN11XV6T1
NSDEMN11XV6T1G
NSDEMN11XV6T5
NSDEMN11XV6T5G
diode N9
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NSDEMN11XV6T1
Abstract: No abstract text available
Text: NSDEMN11XV6T1, NSDEMN11XV6T5 Common Cathode Quad Array Switching Diode This Common Cathode Epitaxial Planar Quad Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−563 package which is designed for low power surface mount
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NSDEMN11XV6T1,
NSDEMN11XV6T5
NSDEMN11XV6T1/D
NSDEMN11XV6T1
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476A diode
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low
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LDAN222T1
SC-89
476A diode
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SOT-563
Abstract: NSDEMN11XV6T1
Text: NSDEMN11XV6T1, NSDEMN11XV6T5 Common Cathode Quad Array Switching Diode This Common Cathode Epitaxial Planar Quad Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−563 package which is designed for low power surface mount
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NSDEMN11XV6T1,
NSDEMN11XV6T5
OT-563
SOT-563
NSDEMN11XV6T1
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SVC333
Abstract: C25V Ne935-2 ACM 944 1096-11 c30 diode
Text: Ordering number : EN935B _ S VC 33 3 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode works at high tuning voltage and has the high Q and the sufficiently high capacitance ratio and
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EN935B
SVC333
Ne935-4/4
C25V
Ne935-2
ACM 944
1096-11
c30 diode
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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Zener Diode SOD523 24v
Abstract: marking code zener diode A SOD523 sod marking m7 zener diode n8 M7 marking diode sod m7 M7 zener diode diode marking N9
Text: Central" CMOZ2L4 THRU CMOZ43L Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an
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CMOZ43L
250mW,
OD-523
OD-523
11-August
Zener Diode SOD523 24v
marking code zener diode A SOD523
sod marking m7
zener diode n8
M7 marking diode
sod m7
M7 zener diode
diode marking N9
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p6 code marking for diode
Abstract: diode MARKING CODE P9 Diode marking m7 n1 a marking cmoz4l7 zener diode n8
Text: Central" MOZ2L4 THRU CMOZ43L Semiconductor Corp. SURFACE MOUNT ULTRAmini“ LOW LEVEL SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator
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CMOZ43L
350mW,
IMPE50
OD-523
13-November
p6 code marking for diode
diode MARKING CODE P9
Diode marking m7
n1 a marking
cmoz4l7
zener diode n8
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