B20200G AKA
Abstract: B20200G
Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF20200CT
MBRF20200CT/D
B20200G AKA
B20200G
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b10 45g
Abstract: ON B10 45G 940 b10 45g b1045g SBRD81045 MBRD1045G 838 b10 45g SBRD81045T4G B1045 SBRB1045T4G
Text: MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G Preferred Device SWITCHMODE Schottky Power Rectifier http://onsemi.com Surface Mount Power Package SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 45 VOLTS This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art
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MBRB1045G,
MBRD1045G,
SBRB1045G,
SBRD81045T4G
MBRB1045/D
b10 45g
ON B10 45G
940 b10 45g
b1045g
SBRD81045
MBRD1045G
838 b10 45g
SBRD81045T4G
B1045
SBRB1045T4G
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Untitled
Abstract: No abstract text available
Text: STPS2045CH Power Schottky rectifier Datasheet − production data Features A1 • Very small conduction losses K A2 ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation Description This device is a dual diode Schottky rectifier, suited to high frequency switch mode power
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STPS2045CH
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SBRS8120T3G
Abstract: MBRS120T3G
Text: MBRS120T3G, SBRS8120T3G Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS120T3G,
SBRS8120T3G
MBRS120T3/D
SBRS8120T3G
MBRS120T3G
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Untitled
Abstract: No abstract text available
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction —
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MBRP60035CTL
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Untitled
Abstract: No abstract text available
Text: MBRP20030CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: • Dual Diode Construction —
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MBRP20030CTL
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Untitled
Abstract: No abstract text available
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction —
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MBRP60035CTL
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B40030
Abstract: No abstract text available
Text: MBRP40030CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction −
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MBRP40030CTL
B40030
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Untitled
Abstract: No abstract text available
Text: MBRP20030CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction —
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MBRP20030CTL
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powertap
Abstract: No abstract text available
Text: MBRP40030CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction •
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MBRP40030CTL
powertap
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MBRS140T3G
Abstract: onsemi SMB Schottky diode B14 b14 smb diode MBRS140T3
Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRS140T3
MBRS140T3/D
MBRS140T3G
onsemi SMB Schottky diode B14
b14 smb diode
MBRS140T3
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MBRS140T3G
Abstract: SBRS8140T3G B14A schottky diode SMB marking code 120 b14 smb diode smb marking code B14
Text: MBRS140T3G, SBRS8140T3G Preferred Device Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRS140T3G,
SBRS8140T3G
MBRS140T3/D
MBRS140T3G
SBRS8140T3G
B14A
schottky diode SMB marking code 120
b14 smb diode
smb marking code B14
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MBR120
Abstract: No abstract text available
Text: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high
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MBR120ESFT1G,
NRVB120ESFT1G,
MBR120ESFT3G,
NRVB120ESFT3G
OD-123
MBR120ESFT1/D
MBR120
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MBR140SFT1G
Abstract: nrvb140s nrvb14 NRVB140SFT1G Diode SOd-123 marking cu l4fm
Text: MBR140SFT1G, NRVB140SFT1G, MBR140SFT3G, NRVB140SFT3G, Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high
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MBR140SFT1G,
NRVB140SFT1G,
MBR140SFT3G,
NRVB140SFT3G,
OD-123
MBR140SFT1/D
MBR140SFT1G
nrvb140s
nrvb14
NRVB140SFT1G
Diode SOd-123 marking cu
l4fm
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Untitled
Abstract: No abstract text available
Text: MBR120LSFT1G, NRVB120LSFT1G, MBR120LSFT3G Surface Mount Schottky Power Rectifier http://onsemi.com Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high
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MBR120LSFT1G,
NRVB120LSFT1G,
MBR120LSFT3G
MBR120LSFT1/D
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marking B12 diode SCHOTTKY
Abstract: b12 marking MBRS120T3 B12 DIODE marking B12
Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS120T3
marking B12 diode SCHOTTKY
b12 marking
MBRS120T3
B12 DIODE
marking B12
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B320
Abstract: MBRS3200T3 MBRS3200T3G
Text: MBRS3200T3 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS3200T3
MBRS3200T3/D
B320
MBRS3200T3
MBRS3200T3G
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marking B12 diode SCHOTTKY
Abstract: MBRS120T3
Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS120T3
r14525
MBRS120T3/D
marking B12 diode SCHOTTKY
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MBR120
Abstract: L2L SOD-123FL
Text: MBR120LSFT1G, NRVB120LSFT1G, MBR120LSFT3G Surface Mount Schottky Power Rectifier http://onsemi.com Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high
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MBR120LSFT1G,
NRVB120LSFT1G,
MBR120LSFT3G
OD-123
MBR120LSFT1/D
MBR120
L2L SOD-123FL
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Untitled
Abstract: No abstract text available
Text: MBRAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRAF360T3G
MBRAF360/D
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smd diode code WP
Abstract: diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode
Text: SIEMENS BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting SMD ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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Q62702-A1190
OD-323
50/60Hz,
smd diode code WP
diode smd marking WP
140KW
diode smd marking code WP
diode SMD CODE s 2A
schottky rectifier diode
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AB marking code smd schottky diode
Abstract: AB marking code smd diode SMD DIODE marking AB smd diode marking code 2a
Text: Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • For low-loss, fast recovery rectification, meter protection, bias isolation and clamping purposes • Miniature plastic package for surface mounting SMD ESP: Electrostatic Discharge sensitive device, observe handling precautions!
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Q62702-A1190
OD-323
50/60Hz,
Resista5-1997
Apr-25-1997
AB marking code smd schottky diode
AB marking code smd diode
SMD DIODE marking AB
smd diode marking code 2a
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A1189
Abstract: 1350T
Text: Silicon Schottky Diode Prelim inary data • Rectifier Schottky diode for mobile communication • Low voltage high inductance • For power supply • For clamping and protection in low voltage applications • For detection and step-up-conversion ESD: E lectrostatic Discharge sensitive device, observe handling precautions!
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62702-A1189
OD-323
Jun-03-1997
A1189
1350T
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A1188
Abstract: No abstract text available
Text: Silicon Schottky Diode Prelim inary data • Rectifier Schottky diode with extreme low VF drop for mobile com munication • For power supply • For clamping and protection in low voltage applications • For detection and step-up-conversion ESD: E lectrostatic Discharge sensitive device, observe handling precautions!
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62702-A1188
OD-323
Jun-03-1997
A1188
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