Q62702-A1190
Abstract: No abstract text available
Text: BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface 2 mounting SMD 1 VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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VPS05176
Q62702-A1190
OD-323
50/60Hz,
temper998
Sep-04-1998
Q62702-A1190
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B20200G
Abstract: B20200G AKA B20200 5M MARKING CODE SCHOTTKY DIODE 1505C 221D MBRF20200CT MBRF20200CTG
Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF20200CT
MBRF20200CT/D
B20200G
B20200G AKA
B20200
5M MARKING CODE SCHOTTKY DIODE
1505C
221D
MBRF20200CT
MBRF20200CTG
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B20100G
Abstract: B20100G diode MBRF20100CTG AKA B20100G b20100 b20100 g B20100G AKA B20100G on aka AKA B20100 B20100G diode AKA
Text: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF20100CT
MBRF20100CT/D
B20100G
B20100G diode
MBRF20100CTG
AKA B20100G
b20100
b20100 g
B20100G AKA
B20100G on aka
AKA B20100
B20100G diode AKA
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b2060
Abstract: 221D-03
Text: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF2060CT
MBRF2060CT/D
b2060
221D-03
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B20200G
Abstract: B20200G AKA b20200 b20200 diode B2020 221D-03 1505C 221D MBRF20200CT MBRF20200CTG
Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF20200CT
MBRF20200CT/D
B20200G
B20200G AKA
b20200
b20200 diode
B2020
221D-03
1505C
221D
MBRF20200CT
MBRF20200CTG
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PDF
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B20200G AKA
Abstract: B20200G
Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF20200CT
MBRF20200CT/D
B20200G AKA
B20200G
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b20100
Abstract: MBRF20100CTG
Text: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF20100CT
MBRF20100CT/D
b20100
MBRF20100CTG
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b20100
Abstract: MBRF20100CTG 221D-03 B20100 diode
Text: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF20100CT
MBRF20100CT/D
b20100
MBRF20100CTG
221D-03
B20100 diode
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b2060
Abstract: B2060A
Text: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF2060CT
MBRF2060CT/D
b2060
B2060A
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B2060g
Abstract: *B2060G SCHOTTKY BARRIER RECTIFIER aka
Text: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF2060CT
MBRF2060CT/D
B2060g
*B2060G
SCHOTTKY BARRIER RECTIFIER aka
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221D-03
Abstract: No abstract text available
Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF20200CT
MBRF20200CT/D
221D-03
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b20100
Abstract: b20100 transistor b20100 32 b20100 g B20100 diode 221D AN1040 MBRF20100CT MBRF20100CT-D
Text: MBRF20100CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide
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MBRF20100CT
r14525
MBRF20100CT/D
b20100
b20100 transistor
b20100 32
b20100 g
B20100 diode
221D
AN1040
MBRF20100CT
MBRF20100CT-D
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b20200
Abstract: b20200 diode 221D AN1040 MBRF20200CT 2-2-1D
Text: MBRF20200CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide
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MBRF20200CT
r14525
MBRF20200CT/D
b20200
b20200 diode
221D
AN1040
MBRF20200CT
2-2-1D
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b2545g
Abstract: B2545 AKA b2545 b2545 transistor manual B2545G diode b2545G AKA MBRF2545CTG Silicon Controlled Rectifier Manual transistor manual B2545 221D
Text: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF2545CT
MBRF2545CT/D
b2545g
B2545 AKA
b2545
b2545 transistor manual
B2545G diode
b2545G AKA
MBRF2545CTG
Silicon Controlled Rectifier Manual
transistor manual B2545
221D
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B2545 AKA
Abstract: b2545g B2545 b2545g aka B2545G diode mbrf2545ctg
Text: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF2545CT
MBRF2545CT/D
B2545 AKA
b2545g
B2545
b2545g aka
B2545G diode
mbrf2545ctg
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PDF
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b2545
Abstract: 221D AN1040 MBRF2545CT
Text: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide
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MBRF2545CT
r14525
MBRF2545CT/D
b2545
221D
AN1040
MBRF2545CT
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PDF
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b2060
Abstract: 221D AN1040 MBRF2060CT "Rectifier Tube" 678
Text: MBRF2060CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide
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MBRF2060CT
r14525
MBRF2060CT/D
b2060
221D
AN1040
MBRF2060CT
"Rectifier Tube" 678
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode CDBV0140-G IO=0.1A VR=30V RoHS Device SOD-323 Features -High current rectifier Schottky diode. -Low voltage, low inductance. 0.071 1.80 0.063 (1.60) -For power supply. 0.055 (1.40) 0.047 (1.20) 0.014 (0.35) 0.010 (0.25) Mechanical data
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CDBV0140-G
OD-323
OD-323,
MIL-STD-202,
QW-BA014
CDBV0140-G)
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b10 45g
Abstract: ON B10 45G 940 b10 45g b1045g SBRD81045 MBRD1045G 838 b10 45g SBRD81045T4G B1045 SBRB1045T4G
Text: MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G Preferred Device SWITCHMODE Schottky Power Rectifier http://onsemi.com Surface Mount Power Package SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 45 VOLTS This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art
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MBRB1045G,
MBRD1045G,
SBRB1045G,
SBRD81045T4G
MBRB1045/D
b10 45g
ON B10 45G
940 b10 45g
b1045g
SBRD81045
MBRD1045G
838 b10 45g
SBRD81045T4G
B1045
SBRB1045T4G
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting SMD ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OCR Scan
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Q62702-A1190
OD-323
50/60Hz,
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PDF
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smd diode code WP
Abstract: diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode
Text: SIEMENS BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting SMD ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OCR Scan
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Q62702-A1190
OD-323
50/60Hz,
smd diode code WP
diode smd marking WP
140KW
diode smd marking code WP
diode SMD CODE s 2A
schottky rectifier diode
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AB marking code smd schottky diode
Abstract: AB marking code smd diode SMD DIODE marking AB smd diode marking code 2a
Text: Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • For low-loss, fast recovery rectification, meter protection, bias isolation and clamping purposes • Miniature plastic package for surface mounting SMD ESP: Electrostatic Discharge sensitive device, observe handling precautions!
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OCR Scan
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Q62702-A1190
OD-323
50/60Hz,
Resista5-1997
Apr-25-1997
AB marking code smd schottky diode
AB marking code smd diode
SMD DIODE marking AB
smd diode marking code 2a
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marking 4Ms
Abstract: No abstract text available
Text: SIEMENS BAT 240A Silicon Schottky Diode Preliminary data • Rectifier Schottky diode for modern applications • High reverse voltage • For power supply • For clamping and protection in all high voltage applications ESD: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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Q62702-A1234
OT-23
marking 4Ms
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAT 240A Silicon Schottky Diode Preliminary data • Rectifier Schottky diode for modem applications • High reverse voltage • For power supply • For clamping and protection in all high voltage applications ESD: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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Q62702-A1234
OT-23
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PDF
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