Untitled
Abstract: No abstract text available
Text: AP6900GSM-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 S1/D2 G1 ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching Performance ▼ RoHS Compliant SO-8 S2/A G2
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AP6900GSM-HF
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Untitled
Abstract: No abstract text available
Text: AP6900GSM Pb Free Plating Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE S1/D2 S1/D2 S1/D2 G1 Simple Drive Requirement DC-DC Converter Suitable CH-1 BVDSS Fast Switching Performance S2/A G2 SO-8 CH-2 D1 D1 Description 30V
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AP6900GSM
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ap6900gsm
Abstract: No abstract text available
Text: AP6900GSM Pb Free Plating Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 S1/D2 G1 ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching Performance S2/A G2 SO-8 CH-2 D1 D1 Description
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AP6900GSM
ap6900gsm
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Untitled
Abstract: No abstract text available
Text: STANDARD SPST SWITCHES The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible
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10MHz
18GHz
26GHz
/-12V,
/-15V
S1-0205
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Untitled
Abstract: No abstract text available
Text: SINGLE-POLE, SINGLE-THROW SWITCHES The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible
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10MHz
18GHz
/-12V
-12-RC"
MIL-C-22750
26GHz
S1-1209
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S1H3
Abstract: M103 M105 S1X2
Text: SINGLE-POLE, SINGLE-THROW SWITCHES The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible
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10MHz
18GHz
/-12V
-12-RC"
MIL-C-22750
26GHz
S1-0109
S1H3
M103
M105
S1X2
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61-1230.0
Abstract: 6192 kaba key pcb DC-13 russian diode 611-100 kaba
Text: EAO – Your Expert Partner for Human Machine Interfaces EAO Product Information Series 61 Switches and Indicators 61 Contents 61 Description . 3 Product Assembly . 4
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61-1230.0
Abstract: IEC 60947-5-1 switch 10-2J09 DC-13 lamp t1 102J12 10-2J12
Text: Switches- and Indicators 61 Contents 61 Description . 3 Product Assembly . 4
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K61-999
61-1230.0
IEC 60947-5-1 switch
10-2J09
DC-13
lamp t1
102J12
10-2J12
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10-2J12
Abstract: DC-13 N 4007 diode
Text: Switches- and Indicators 61 Contents 61 Description . 5 Product Assembly . 6
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Si4816DY
Abstract: Si4816DY-T1-E3
Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21
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Si4816DY
2002/95/EC
11-Mar-11
Si4816DY-T1-E3
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Si4816DY
Abstract: Si4816DY-T1-E3 Si4816D
Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21
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Si4816DY
2002/95/EC
18-Jul-08
Si4816DY-T1-E3
Si4816D
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Untitled
Abstract: No abstract text available
Text: Si1965DH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 12 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) a
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Si1965DH
2002/95/EC
OT-363
SC-70
Si1965DH-T1-E3
Si1965DH-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Si1958DH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a Qg (Typ.) a 0.205 at VGS = 4.5 V 1.3 0.340 at VGS = 2.5 V 1.3a 1.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si1958DH
2002/95/EC
OT-363
SC-70
Si1958DH-T1-E3
Si1958DH-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Si1967DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.3a 0.640 at VGS = - 2.5 V - 1.2 0.790 at VGS = - 1.8 V - 1.0 • Halogen-free According to IEC 61249-2-21 Definition
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Si1967DH
2002/95/EC
OT-363
SC-70
Si1967DH-T1-E3electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Si1970DH Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.225 at VGS = 4.5 V 1.3a 0.345 at VGS = 2.5 V 1.3a VDS (V) 30 Qg (Typ.) 1.15 nC APPLICATIONS SOT-363 SC-70 (6-LEADS) S1 1 6 • Halogen-free According to IEC 61249-2-21
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Si1970DH
OT-363
SC-70
2002/95/EC
Si1970DH-T1-E3
Si1970DH-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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diode d2 6pin
Abstract: SI1922EDH-T1-GE3 SI1922EDH marking 43 6pin
Text: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21
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Si1922EDH
2002/95/EC
OT-363
SC-70
Si1922EDH-T1-GE3
11-Mar-11
diode d2 6pin
marking 43 6pin
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Si4340DY-T1-E3
Abstract: Si4340DY
Text: Si4340DY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
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Si4340DY
2002/95/EC
SO-14
18-Jul-08
Si4340DY-T1-E3
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marking code vishay soic
Abstract: No abstract text available
Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21
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Si4816DY
2002/95/EC
Si4816DY-T1-E3
Si4816DY-T1-GE3
11-Mar-11
marking code vishay soic
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si1922
Abstract: SI1922EDH
Text: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21
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Si1922EDH
2002/95/EC
OT-363
SC-70
Si1922EDH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si1922
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Untitled
Abstract: No abstract text available
Text: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21
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Si1922EDH
2002/95/EC
OT-363
SC-70
Si192electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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SI1922EDH-T1-GE3
Abstract: No abstract text available
Text: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21
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Si1922EDH
2002/95/EC
OT-363
SC-70
Si19emarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI1922EDH-T1-GE3
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Untitled
Abstract: No abstract text available
Text: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21
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Si1922EDH
2002/95/EC
OT-363
SC-70
Si1922EDH-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SPST SWITCHES Advanced c o n tro l C o m m o n «« The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of
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10MHz
18GHz
L-STD-202F,
MIL-STD-202F,
M105C,
26GHz
MIL-STD-883
/-12V,
/-15V
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ISQL5
Abstract: No abstract text available
Text: *3 7 S C S -T H O M S O N L L V # 6 1 14 6115 QUAD 100 V, DMOS SWITCH DUTPUT VOLTAGE TO 100 V 3 .7 n R d s O N MultiPower BCD Technology SUPPLY VOLTAGE UP TO 60 V -O W INPUT CURRENT FTLVCMOS COMPATIBLE INPUTS HIGH SW ITCHING FREQUENCY (200 KHz) S C R IP T IO N
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L6114/15
L6114age.
L6114/L6115
ISQL5
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