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Vishay Siliconix SI4816DY-T1-E3 MOSFET 2N-CH 30V 5.3A/7.7A 8SOIC
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DigiKey	SI4816DY-T1-E3	Digi-Reel			1	1 $2.44 10 $2.44 100 $2.44 1000 $2.44 10000 $2.44	Buy Now
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Quest Components	SI4816DY-T1-E3		77			1 $4 10 $4 100 $2 1000 $2 10000 $2	Buy Now
	SI4816DY-T1-E3		77			1 $4 10 $4 100 $2 1000 $2 10000 $2	Buy Now
Vishay Siliconix SI4816DY-T1-GE3 MOSFET 2N-CH 30V 5.3A/7.7A 8SOIC
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DigiKey	SI4816DY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4816DY
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Bristol Electronics	SI4816DY		642			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI4816DY TRANSISTOR,MOSFET,HALF BRIDGE,N-CHANNEL,30V V(BR)DSS,5.3A I(D),SO
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Quest Components	SI4816DY		92			1 $2.275 10 $2.275 100 $1.365 1000 $1.365 10000 $1.365	Buy Now
Velocity Electronics	SI4816DY		44			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI2365EDS-T1-GE3 MOSFETs -20V Vds 8V Vgs SOT-23
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TTI	SI2365EDS-T1-GE3	Reel	15,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.06	Buy Now

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SI4816D Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
Si4816DY	Vishay Intertechnology	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode	Original	PDF
SI4816DY	Vishay Siliconix	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode	Original	PDF
SI4816DY-E3	Vishay Siliconix	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode	Original	PDF
Si4816DY SPICE Device Model	Vishay	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode	Original	PDF
SI4816DY-T1	Vishay Intertechnology	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode	Original	PDF
SI4816DY-T1	Vishay Siliconix	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode	Original	PDF
SI4816DY-T1-E3	Vishay Siliconix	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode	Original	PDF
SI4816DY-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5.3A 8-SOIC	Original	PDF
SI4816DY-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5.3A 8-SOIC	Original	PDF

SI4816D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si4816DY Abstract: Si4816DY-T1-E3 Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21	Original	Si4816DY 2002/95/EC 11-Mar-11 Si4816DY-T1-E3	PDF
tp181 Abstract: toshiba hdd schematic board cbf 493 TP223 mt2 tEac CBF 423 diode ba39 toshiba 1,8 hdd schematic board TP182 keyboard and touchpad schematic Text: 4-148 KBC3_SUSPWR 1% R11 10K 1% R18 6.65K P1.5V_AUX VDC C20 10nF TP192 TP193 R7 TP? 2.5V AL C6 330uF 7 6 5 TP194 Q57 SI4816DY IHLP-2525CZ-01 L1 4.7uH 25V C14 4700nF 3 8 2 D1 4 G2 1 G1 TP217 TP216 R1 1K TP196 25V C15 220nF TP191 5% TP190 R17 6.8K 1% R15 330K	Original	4700nF TP197 TP208 TP198 220nF ISL6225CA-T TP199 tp181 toshiba hdd schematic board cbf 493 TP223 mt2 tEac CBF 423 diode ba39 toshiba 1,8 hdd schematic board TP182 keyboard and touchpad schematic	PDF
Untitled Abstract: No abstract text available Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6	Original	Si4816DY Si4816DY-T1 S-03951--Rev. 26-May-03	PDF
Untitled Abstract: No abstract text available Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6	Original	Si4816DY Si4816DY-T1 S-31726--Rev. 18-Aug-03	PDF
SI4816BDY Abstract: MOSFET SPECIFICATIONS Si4816BDY-T1-E3 Si4816DY-T1-E3 PD1.4 Si4816DY Si4816DY-T1 73294 Text: Specification Comparison Vishay Siliconix Si4816BDY vs. Si4816DY Description: Dual N-Channel, 30 V D-S MOSFET with Schottky Diode Package: SO-8 Pin Out: Identical Part Number Replacements: Si4816BDY-T1-E3 Replaces Si4816DY-T1-E3 Si4816BDY-T1 Replaces Si4816DY-T1	Original	Si4816BDY Si4816DY Si4816BDY-T1-E3 Si4816DY-T1-E3 Si4816BDY-T1 Si4816DY-T1 10-Nov-06 MOSFET SPECIFICATIONS PD1.4 73294	PDF
Si4816DY Abstract: No abstract text available Text: SPICE Device Model Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4816DY 0-to-10V 28-Jun-01	PDF
Untitled Abstract: No abstract text available Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6	Original	Si4816DY Si4816DY-T1 Vol10 S-31726--Rev. 18-Aug-03	PDF
Untitled Abstract: No abstract text available Text: Si4816DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6 SCHOTTKY PRODUCT SUMMARY	Original	Si4816DY S-00043--Rev. 24-Jan-00	PDF
Si4816DY Abstract: No abstract text available Text: Si4816DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6 SCHOTTKY PRODUCT SUMMARY	Original	Si4816DY S-00043--Rev. 24-Jan-00	PDF
Untitled Abstract: No abstract text available Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21	Original	Si4816DY 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
52015 datasheet Abstract: Si4816DY Text: SPICE Device Model Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4816DY 18-Jul-08 52015 datasheet	PDF
Si4816DY-T1-E3 Abstract: No abstract text available Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6	Original	Si4816DY Si4816DY-T1 Si4816DY--E3 Si4816DY-T1--E3 S-51414--Rev. 01-Aug-05 Si4816DY-T1-E3	PDF
52015 Abstract: Si4816DY Text: SPICE Device Model Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4816DY S-52015Rev. 03-Oct-05 52015	PDF
Untitled Abstract: No abstract text available Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21	Original	Si4816DY 2002/95/EC Si4816DY-T1-E3 Si4816DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF

51414 Abstract: No abstract text available Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6	Original	Si4816DY Si4816DY-T1 Si4816DY--E3 Si4816DY-T1--E3 08-Apr-05 51414	PDF
Si4816DY Abstract: Si4816DY-T1-E3 Si4816D Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21	Original	Si4816DY 2002/95/EC 18-Jul-08 Si4816DY-T1-E3 Si4816D	PDF
W46BAA Abstract: Si4816DY Si4816DY-T1 Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (Ω) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6 FEATURES	Original	Si4816DY Si4816DY-T1 Si4816Dre S-41697--Rev. 20-Sep-04 W46BAA	PDF
marking code vishay soic Abstract: No abstract text available Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21	Original	Si4816DY 2002/95/EC Si4816DY-T1-E3 Si4816DY-T1-GE3 11-Mar-11 marking code vishay soic	PDF
Untitled Abstract: No abstract text available Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6	Original	Si4816DY Si4816DY-T1 Si4816DY--E3 Si4816DY-T1--E3 S-41425--Rev. 26-Jul-04	PDF
71917 Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller	Original	AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds	PDF
BA41-00727A Abstract: LE88CLGM 82801 hbm IDTCV179 20D2G q231 samsung lcd tv power supply schematic NH82801HEM NB8M-SE RB1 Wlan Cardbus Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D TORINO 2 g n l u a s i t m	Original	965GM BA41-00727A TP17351 7SZ08 TP16469 TP16470 LTST-C193TBKT-AC A3212ELH/HED55XXU12 MT539 TP16471 LE88CLGM 82801 hbm IDTCV179 20D2G q231 samsung lcd tv power supply schematic NH82801HEM NB8M-SE RB1 Wlan Cardbus	PDF
Bluetooth Energy Meter ckt diagram Abstract: 94vo r29 Batteries Varta 500 rst 124 Touch pad synaptics Realistic sa-150 rotary encoder EC11 VT82C694X UB133X01 ALC200 humidity temperature sensor sh11 Text: SERVICE MANUAL & TROUBLESHOOTING GUIDE FOR 7170 BY： Richard Wang TESTING TECHNOLOGY DEPARTMENT / TSSC JUL. 2001 7170 N/B MAINTENANCE CONTENTS 1. Hardware Engineering Specification- 3	Original	FD501 FD504 FD502 FD503 Bluetooth Energy Meter ckt diagram 94vo r29 Batteries Varta 500 rst 124 Touch pad synaptics Realistic sa-150 rotary encoder EC11 VT82C694X UB133X01 ALC200 humidity temperature sensor sh11	PDF
AR5212 Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516 Text: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X05 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)	Original	ISL6225VCC AR5212 ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516	PDF
smd code wKX Abstract: samsung nc110 samsung nc108 AR5112 TP2322 ELM7S08WS TP2320 smd zG sot 23 TP2323 GND194 Text: [ Z zhtz\|unGwyvwypl{hy Y X {opzGkvj\|tlu{Gjvu{hpuzGjvumpklu{phs wyvwypl{hyGpumvyth{pvuG{oh{Gpz zhtz\|unGlslj{yvupjzGjvNzGwyvwly{U kvGuv{GkpzjsvzlG{vGvyGk\|wspjh{lGmvyGv{olyz ljlw{GhzGh\|{ovyplkGiGzhtz\|unU k k jpjospk j i jw\|GGGGGGaG ihuphzVkv{ohu jGzGaG tjoTtGvkltR	Original	wziG2893-3017F ELM7S08WS 100nF MMBD41 PGB001 smd code wKX samsung nc110 samsung nc108 AR5112 TP2322 ELM7S08WS TP2320 smd zG sot 23 TP2323 GND194	PDF

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SI4816D Price and Stock

Vishay Siliconix SI4816DY-T1-E3

Vishay Siliconix SI4816DY-T1-GE3

Vishay Intertechnologies SI4816DY

Vishay Siliconix SI4816DY

Vishay Intertechnologies SI2365EDS-T1-GE3

SI4816D Datasheets (9)

SI4816D Datasheets Context Search

Si4816DY

tp181

Untitled

Untitled

SI4816BDY

Si4816DY

Untitled

Untitled

Si4816DY

Untitled

52015 datasheet

Si4816DY-T1-E3

52015

Untitled

51414

Si4816DY

W46BAA

marking code vishay soic

Untitled

71917

BA41-00727A

Bluetooth Energy Meter ckt diagram

AR5212

smd code wKX