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    DIODE SMD MARKING CODE 6C Search Results

    DIODE SMD MARKING CODE 6C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SMD MARKING CODE 6C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd transistor w1a

    Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
    Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the


    Original     		CX-49G, CX-40F HC-49/U HC-49U-S 31-Dec-04 CX-49L smd transistor w1a smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor PDF

    3P03L04

    Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
    Text: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V


    Original     		IPI80P03P3L-04 IPP80P03P3L-04 IPB80P03P3L-04 IPP80P03P3L-04 3P03L04 BIPP80P03P3L-04, 3P03L04 ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 package to220 DIODE smd marking code UM 31 PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes PDF

    IPP25N06S3L-21

    Abstract: Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING
    Text: Target data sheet IPI25N06S3L-21 IPP25N06S3L-21,IPB25N06S3L-21 OptiMOS -T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • Logic Level • AEC Q101 qualified max. SMD version P- TO262 -3-1 P- TO263 -3-2 55 V


    Original     		IPI25N06S3L-21 IPP25N06S3L-21 IPB25N06S3L-21 IPP25N06S3L-21 3N06L21 BIPP25N06S3L-21, Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING PDF

    3N06L06

    Abstract: C4 diode ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 INFINEON smd PART MARKING IPI80N06S3L06
    Text: Target data sheet IPI80N06S3L-06 IPP80N06S3L-06,IPB80N06S3L-06 OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 5.6 mΩ ID 80 A P- TO262 -3-1


    Original     		IPI80N06S3L-06 IPP80N06S3L-06 IPB80N06S3L-06 IPP80N06S3L-06 3N06L06 BIPP80N06S3L-06, 3N06L06 C4 diode ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 INFINEON smd PART MARKING IPI80N06S3L06 PDF

    3pn06l03

    Abstract: ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING
    Text: Target data sheet IPI100N06S3L-03 IPP100N06S3L-03,IPB100N06S3L-03 OptiMOS-T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 2.7 mΩ ID 100 A P- TO262 -3-1


    Original     		IPI100N06S3L-03 IPP100N06S3L-03 IPB100N06S3L-03 IPP100N06S3L-03 3PN06L03 BIPP100N06S3L-03, 3pn06l03 ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING PDF

    3N0625

    Abstract: INFINEON PART MARKING 252 SMD marking code 1696 ANPS071E IPI25N06S3-25 IPP25N06S3-25 IPB25N06S3-25 INFINEON smd PART MARKING smd diode code marking 33A TO220 package infineon
    Text: Target data sheet OptiMOS -T Power-Transistor Product Summary VDS Feature • n-Channel 55 RDS on max. SMD version • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) IPI25N06S3-25 IPP25N06S3-25,IPB25N06S3-25 P- TO262 -3-1 V 24.9


    Original     		IPI25N06S3-25 IPP25N06S3-25 IPB25N06S3-25 IPP25N06S3-25 3N0625 BIPP25N06S3-25, 3N0625 INFINEON PART MARKING 252 SMD marking code 1696 ANPS071E IPI25N06S3-25 IPB25N06S3-25 INFINEON smd PART MARKING smd diode code marking 33A TO220 package infineon PDF

    3N0607

    Abstract: ANPS071E IPB80N06S3-07 IPI80N06S3-07 IPP80N06S3-07 DIODE 7387 smd diode code 102a c4 09 smd marking code
    Text: Target data sheet OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • AEC Q101 qualified • Low On-Resistance RDS on IPI80N06S3-07 IPP80N06S3-07,IPB80N06S3-07 Product Summary VDS 55 V RDS(on) max. SMD version 6.5 mΩ ID 80 A P- TO262 -3-1


    Original     		IPI80N06S3-07 IPP80N06S3-07 IPB80N06S3-07 IPP80N06S3-07 3N0607 BIPP80N06S3-07, 3N0607 ANPS071E IPB80N06S3-07 IPI80N06S3-07 DIODE 7387 smd diode code 102a c4 09 smd marking code PDF

    3PN0603

    Abstract: INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03
    Text: Target data sheet IPI100N06S3-03 IPP100N06S3-03,IPB100N06S3-03 OptiMOS-T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) max. SMD version P- TO262 -3-1 55 V


    Original     		IPI100N06S3-03 IPP100N06S3-03 IPB100N06S3-03 IPP100N06S3-03 3PN0603 BIPP100N06S3-03, 3PN0603 INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 PDF

    irf 940

    Abstract: smd diode marking code UJ
    Text: SDB20S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide 1 • No reverse recovery 2 3 • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23


    Original     		SDB20S30 P-TO220-3 S20S30 Q67040-S4374 irf 940 smd diode marking code UJ PDF

    Q62702-A1190

    Abstract: Q62702A
    Text: BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • For low-loss, fast recovery rectification, meter protection, bias isolation and clamping purposes • Miniature plastic package for surface mounting SMD ESD: ElectroStatic Discharge sensitive device, observe handling precautions!


    Original     		OD-323 Q62702-A1190 50/60Hz, Apr-25-1997 Q62702-A1190 Q62702A PDF

    Untitled

    Abstract: No abstract text available
    Text: SDB20S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide 1 • No reverse recovery 2 3 • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23 IF


    Original     		SDB20S30 P-TO220-3 Q67040-S4374 S20S30 PDF

    D10S30

    Abstract: 300V Schottky Diode smd Q67040-S4373 SDB10S30 SDP10S30 2t smd
    Text: SDB10S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide • No reverse recovery • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23 nC IF 10


    Original     		SDB10S30 P-TO220-3 Q67040-S4373 D10S30 D10S30 300V Schottky Diode smd Q67040-S4373 SDB10S30 SDP10S30 2t smd PDF

    P-TO220SMD

    Abstract: No abstract text available
    Text: SDB10S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide • No reverse recovery • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23 nC IF


    Original     		SDB10S30 P-TO220-3 Q67040-S4373 D10S30 P-TO220SMD PDF

    smd diode marking code UJ

    Abstract: Q67040-S4370
    Text: SDB06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original     		SDB06S60 P-TO220-3 D06S60 Q67040-S4370 smd diode marking code UJ Q67040-S4370 PDF

    2N04L03

    Abstract: SPB80N04S2L-03 SPP80N04S2L-03
    Text: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1


    Original     		SPP80N04S2L-03 SPB80N04S2L-03 P-TO263-3-2 P-TO220-3-1 Q67040-S4261 Q67040-S4262 2N04L03 SPB80N04S2L-03 SPP80N04S2L-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP100N08S2L-07 SPB100N08S2L-07 OptiMOS Power-Transistor Product Summary Feature 75 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID  Logic Level P- TO263 -3-2 175°C operating temperature V 6.5 m 100 A P- TO220 -3-1  Avalanche rated  dv/dt rated


    Original     		SPP100N08S2L-07 SPB100N08S2L-07 SPP100N08S2L-07 Q67060-S6045 SPB100N08S2L-07 Q67060-S6047 PN08L07 BSPP100N08S2L-07 BSPB100N08S2L-07, PDF

    10n03l

    Abstract: 10N03 smd diode 36A IPB10N03L diode 73a IPP10N03L IPB10N03L SMD Q67042-S4040
    Text: IPP10N03L IPB10N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 RDS(on) max. SMD version 8.9 m ID 73 A P-TO263-3-2


    Original     		IPP10N03L IPB10N03L P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67042-S4040 10N03L P-TO263-3-2 10n03l 10N03 smd diode 36A IPB10N03L diode 73a IPP10N03L IPB10N03L SMD Q67042-S4040 PDF

    2n08l07

    Abstract: 67a smd 2N08L07 POWER "2N08L07" smd diode 67A smd code "67A" 2n08l07 marking diode um 67A Q67060-S6016 smd 67a
    Text: SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS =Power-Transistor Product Summary Feature 75 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID  Logic Level P- TO263 -3-2 175°C operating temperature V 6.8 m 80 A P- TO220 -3-1  Avalanche rated  dv/dt rated


    Original     		SPP80N08S2L-07 SPB80N08S2L-07 Q67060-S6015 Q67060-S6016 2N08L07 BSPP80N08S2L-07 BSPB80N08S2L-07, 67a smd 2N08L07 POWER "2N08L07" smd diode 67A smd code "67A" 2n08l07 marking diode um 67A Q67060-S6016 smd 67a PDF

    pn06l05

    Abstract: marking code br 37 SMD
    Text: SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID  Logic Level P- TO263 -3-2 175°C operating temperature V 4.4 m 100 A P- TO220 -3-1  Avalanche rated  dv/dt rated


    Original     		SPP100N06S2L-05 SPB100N06S2L-05 Q67060-S6043 Q67060-S6042 PN06L05 BSPP100N06S2L-05 BSPB100N06S2L-05, marking code br 37 SMD PDF

    67a smd

    Abstract: 2n08l07 2N08L07 POWER SPP80N08S2L-07 "2N08L07" smd diode 67A BR 303 2n08l07 marking s6016 smd 67a
    Text: SPP80N08S2L-07 SPB80N08S2L-07 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 75 V RDS on max. SMD version 6.8 mΩ ID 80 A P-TO263-3-2 •=175°C operating temperature P-TO220-3-1


    Original     		SPP80N08S2L-07 SPB80N08S2L-07 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6015 2N08L07 P-TO263-3-2 67a smd 2n08l07 2N08L07 POWER SPP80N08S2L-07 "2N08L07" smd diode 67A BR 303 2n08l07 marking s6016 smd 67a PDF

    2N04L04

    Abstract: No abstract text available
    Text: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 40 V RDS on max. SMD version 3.1 mΩ • Logic Level ID 80 A •=175°C operating temperature P-TO263-3-2 • Enhancement mode P-TO220-3-1


    Original     		SPP80N04S2L-03 SPB80N04S2L-03 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4261 2N04L04 P-TO263-3-2 2N04L04 PDF

    D20S30

    Abstract: SDP20S30 Q67040-S4374 Q67040-S4419 S20S30 SDB20S30 smd diode marking code UJ diode smd marking code 435 300V Schottky Diode smd
    Text: SDP20S30 SDB20S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide 1 • No reverse recovery 2 3 • No temperature influence on Qc 23 IF 2x10 P-TO220-3.SMD the switching behavior


    Original     		SDP20S30 SDB20S30 P-TO220-3 P-TO220-3-1. Q67040-S4419 Q67040-S4374 D20S30 SDP20S30 Q67040-S4374 Q67040-S4419 S20S30 SDB20S30 smd diode marking code UJ diode smd marking code 435 300V Schottky Diode smd PDF

    AB marking code smd schottky diode

    Abstract: AB marking code smd diode SMD DIODE marking AB smd diode marking code 2a
    Text: Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • For low-loss, fast recovery rectification, meter protection, bias isolation and clamping purposes • Miniature plastic package for surface mounting SMD ESP: Electrostatic Discharge sensitive device, observe handling precautions!


    OCR Scan     		Q62702-A1190 OD-323 50/60Hz, Resista5-1997 Apr-25-1997 AB marking code smd schottky diode AB marking code smd diode SMD DIODE marking AB smd diode marking code 2a PDF