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    SDB10S30 Search Results

    SDB10S30 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDB10S30 Infineon Technologies SMD, Schottky Diode, 300V, 10A, Silicon Diode, Stamping Code:D10S30 Original PDF
    SDB10S30 Infineon Technologies Silicon Carbide Schottky Diode Original PDF
    SDB10S30 SMD Infineon Technologies 10A diode in TO-220 SMD package Original PDF
    SDB10S30SMD Infineon Technologies Silicon Carbide Schottky Diodes - 10A diode in TO263 package Original PDF

    SDB10S30 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D10S30

    Abstract: SDB10S30 SDP10S30 SDT10S30 Q67040-S4372 Q67040-S4373 Q67040-S4447 P-TO220-2-2
    Text: SDP10S30, SDB10S30 SDT10S30 Preliminary data Silicon Carbide Schottky Diode  Revolutionary semiconductor Product Summary V VRRM 300 material - Silicon Carbide  Switching behavior benchmark  No reverse recovery  No temperature influence on P-TO220-2-2.


    Original     		SDP10S30, SDB10S30 SDT10S30 P-TO220-2-2. P-TO220-3 P-TO220-3-1. SDP10S30 Q67040-S4372 D10S30 D10S30 SDB10S30 SDP10S30 SDT10S30 Q67040-S4372 Q67040-S4373 Q67040-S4447 P-TO220-2-2 PDF

    P-TO220SMD

    Abstract: No abstract text available
    Text: SDB10S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide • No reverse recovery • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23 nC IF


    Original     		SDB10S30 P-TO220-3 Q67040-S4373 D10S30 P-TO220SMD PDF

    D10S30

    Abstract: 300V Schottky Diode smd Q67040-S4373 SDB10S30 SDP10S30 2t smd
    Text: SDB10S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide • No reverse recovery • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23 nC IF 10


    Original     		SDB10S30 P-TO220-3 Q67040-S4373 D10S30 D10S30 300V Schottky Diode smd Q67040-S4373 SDB10S30 SDP10S30 2t smd PDF

    Untitled

    Abstract: No abstract text available
    Text: SDP10S30 SDB10S30 Preliminary data Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 • Switching behavior benchmark VRRM • No reverse recovery Qc 23 nC • No temperature influence on IF 10


    Original     		SDP10S30 SDB10S30 P-TO220-3 P-TO220-3-1 Q67040-S4372 D10S30 PDF

    D10S30

    Abstract: Q67040-S4372 Q67040-S4373 SDB10S30 SDP10S30 SDT10S30
    Text: SDP10S30, SDB10S30 SDT10S30 Preliminary data Silicon Carbide Schottky Diode  Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 VRRM  Switching behavior benchmark  No reverse recovery Qc 23 nC  No temperature influence on IF 10


    Original     		SDP10S30, SDB10S30 SDT10S30 P-TO220-2-21. P-TO220-3 P-TO220-3-1. SDP10S30 Q67040-S4372 D10S30 D10S30 Q67040-S4372 Q67040-S4373 SDB10S30 SDP10S30 SDT10S30 PDF

    SIPC69N60C3

    Abstract: SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822
    Text: File name Products Silicon Carbide Diodes thinQ 300V / 600V SDP06S60 SDP04S60 SDB10S30 SiC_Pspice.zip Smart High Side Switches High-Current PROFET BTS555 BTS550P BTS650P PROFET_Pspice.exe Smart Low Side Switches TEMPFET / Speed TEMPFET HITFET BTS114A BSP78


    Original     		SDP06S60 SDP04S60 SDB10S30 BTS555 BTS550P BTS650P BTS114A BSP78 BTS115A BTS134D SIPC69N60C3 SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822 PDF

    D10S30

    Abstract: diode smd marking code 435 Q67040-S4372 Q67040-S4373 Q67040-S4447 SDB10S30 SDP10S30 SDT10S30 P-TO220-3-1
    Text: SDP10S30, SDB10S30 SDT10S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide • No reverse recovery • No temperature influence on P-TO220-2-2. the switching behavior V


    Original     		SDP10S30, SDB10S30 SDT10S30 P-TO220-2-2. P-TO220-3 P-TO220-3-1. SDP10S30 Q67040-S4372 D10S30 D10S30 diode smd marking code 435 Q67040-S4372 Q67040-S4373 Q67040-S4447 SDB10S30 SDP10S30 SDT10S30 P-TO220-3-1 PDF

    TCA 700 y

    Abstract: BTS 7930 ICE1PS02 igbt eupec TDA16846 equivalent tda16846 TLE72xx ICE1PS01 tda16846 p tca 765
    Text: ООО «ЭФО» ОФИЦИАЛЬНЫЙ ДИСТРИБЬЮТОР Infineon Technologies Силовые полупроводниковые компоненты Инфинеон от производителя №1 в мире w w w. i n f i n e o n . c o m


    Original     		SDB06S60 SDB02S60 SDB04S60 SDB05S60 SDB12S60 SDB08S60 SDB10S60 TCA 700 y BTS 7930 ICE1PS02 igbt eupec TDA16846 equivalent tda16846 TLE72xx ICE1PS01 tda16846 p tca 765 PDF

    TDA 16822

    Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
    Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as


    Original     		B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3 PDF