Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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ltc4352iddpbf
Abstract: TRANSISTOR mosfet 9V LTC4352I LTC4352 LTC4352IMS Schottky Diode 80V 6A 12-PIN LTC4352C LTC4352CDD LTC4352IDD
Text: LTC4352 Low Voltage Ideal Diode Controller with Monitoring FEATURES DESCRIPTION n The LTC 4352 creates a near-ideal diode using an external N-channel MOSFET. It replaces a high power Schottky diode and the associated heat sink, saving power and board area. The ideal diode function permits low loss
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LTC4352
12-Pin
1TC4412HV
8V/36V,
TSOT-23
LTC4413/LTC4413-1
DFN-10
LTC4414
LTC4416/LTC4416-1
ltc4352iddpbf
TRANSISTOR mosfet 9V
LTC4352I
LTC4352
LTC4352IMS
Schottky Diode 80V 6A
LTC4352C
LTC4352CDD
LTC4352IDD
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MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
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Untitled
Abstract: No abstract text available
Text: LTC4229 Ideal Diode and Hot Swap Controller Features Description Ideal Diode and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diode n Protects Output Voltage from Input Brownouts n Allows Safe Hot Swapping from a Live Backplane
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LTC4229
24-Lead
MSOP-16
DFN-16
LTC4353
LTC4355
SO-16,
DFN-14
MSOP-16
LTC4357
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MMAD1108
Abstract: No abstract text available
Text: MMAD1108 Switching Diode Array Steering Diode TVS ArrayTM SCOTTSDALE DIVISION PRODUCT PREVIEW W W W. Microsemi .COM SWITCHING AND STEERING ARRAY DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in an SOIC package for use in
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MMAD1108
MSC0900
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LTC4416
Abstract: No abstract text available
Text: LTC4353 Dual Low Voltage Ideal Diode Controller FEATURES n n n n n n n DESCRIPTION The LTC 4353 controls external N-channel MOSFETs to implement an ideal diode function. It replaces two high power Schottky diodes and their associated heat sinks, saving power and board area. The ideal diode function
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LTC4353
16-Lead
LTC4353
DFN-10
DFN-10
LTC4414
LTC4415
MSOP-16
DFN-16
LTC4416/LTC4416-1
LTC4416
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Untitled
Abstract: No abstract text available
Text: iC-VJ, iC-VJZ LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Transmitter for laser light barriers from 1 to 200kHz ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ◊ ◊ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode
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200kHz
250mA
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diode 107 10K 501
Abstract: G103 G003 G101 G102 32MHz quartz RESONATOR amd IC amplifier G701 11nQ
Text: iC-VJ, iC-VJZ LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Transmitter for laser light barriers from 1 to 200kHz ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ◊ ◊ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode
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200kHz
250mA
exter9-6135-9292-0
diode 107 10K 501
G103
G003
G101
G102
32MHz quartz RESONATOR
amd IC amplifier
G701
11nQ
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marking dp sot363
Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
marking dp sot363
BC237
transistor BF245 A
marking A5 sot363
2N2222A plastic
bc849
bf245 equivalent
marking code a5 sot363
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2N301
Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2N301
BC237
5111 sot-23
BC547 sot package sot-23
2N5670 equivalent
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4B2 diode
Abstract: S1 DIODE schottky CS3257 CBTS3257 CBTS3257D CBTS3257DB CBTS3257DS CBTS3257PW JESD22-A114 JESD22-A115
Text: INTEGRATED CIRCUITS CBTS3257 Quad 1-of-2 multiplexer/demultiplexer with Schottky diode Product data Philips Semiconductors 2002 Sep 27 Philips Semiconductors Product data Quad 1-of-2 multiplexer/demultiplexer with Schottky diode FEATURES CBTS3257 PIN CONFIGURATION
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CBTS3257
JESD78
JESD22-A114,
JESD22-A115
4B2 diode
S1 DIODE schottky
CS3257
CBTS3257
CBTS3257D
CBTS3257DB
CBTS3257DS
CBTS3257PW
JESD22-A114
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS CBTS3253 Dual 1-of-4 FET multiplexer/demultiplexer with Schottky diode Preliminary data Philips Semiconductors 2002 Sep 09 Philips Semiconductors Preliminary data Dual 1-of-4 FET multiplexer/demultiplexer with Schottky diode FEATURES CBTS3253
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CBTS3253
CBTS3253
JESD22-A114,
JESD22-A115
JESD22-C101
JESD78
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BC237
Abstract: sot23 transistor marking JY
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV199LT1 This switching diode has the following features: • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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BAV199LT1
BAV199LT3
inch/10
BAV199LT1
236AB)
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
sot23 transistor marking JY
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BC237
Abstract: 2N2904 bf245b equivalent SOT23 Marking JX
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAV170LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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BAV170LT1
BAV170LT3
inch/10
BAV170LT1
236AB)
t218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
2N2904
bf245b equivalent
SOT23 Marking JX
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BC237
Abstract: TRANSISTOR bc177b
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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BAW156LT1
BAW156LT3
inch/10
BAW156LT1
236AB)
Junc218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
TRANSISTOR bc177b
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BC237
Abstract: marking code N9 8-pin
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode DAN222 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90
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416/SC
DAN222
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
marking code N9 8-pin
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BC237
Abstract: 2n2222a SOT223 5161 common anode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for
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OT-223
MV7005T1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
2n2222a SOT223
5161 common anode
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BC237
Abstract: DUAL GENERAL PURPOSE TRANSISTORS marking code D3 SOT23 component marking code mt
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package
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M1MA141/2WKT1
inch/3000
M1MA141/2WKT3
inch/10
M1MA141WKT1
M1MA142WKT1
70/SOT
M1218A
MSC1621T1
BC237
DUAL GENERAL PURPOSE TRANSISTORS marking code D3
SOT23 component marking code mt
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ad130
Abstract: D1103 d1105 MMAD1109 AD1107
Text: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching
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MMAD130/D
AD1105
AD1107
ad130
D1103
d1105
MMAD1109
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AD130
Abstract: D1107 AD1105
Text: M OTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode A rray s Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching
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MMAD130/D
0EH0b32
AD130
D1107
AD1105
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MMAD1107
Abstract: mmad1103 MMAD1105 MMAD1109 Ad1103
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-sw itching core-driver applications. These arrays offer many of the advantages of integrated
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MMAD130
MAD1105
MMAD1107
mmad1103
MMAD1105
MMAD1109
Ad1103
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D1109
Abstract: D1103 6 PIN TRANSISTORS 566
Text: SURFACE MOUNT DIODE ARRAYS MMAD130 MMAD1103 These diode arrays are m ultiple diode junctions fabricated by a planar pro cess and m ounted in integrated circuit packages fo r use in high-current, fast-sw itching core-driver applications. These arrays offer many o f the
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MMAD130
Abstract: MMAD1103 MMAD1107 MONOLITHIC DIODE ARRAYS MMAD1105 MMAD1109
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA bV M M A m 3 o/"d M o n o lith ic D io de A rra y s Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-sw itching
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MMAD130/D
51A-03
MMAD130
MMAD1103
MMAD1107
MONOLITHIC DIODE ARRAYS
MMAD1105
MMAD1109
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TVS Diode
Abstract: diode array S020L SO 273 tvs diode 225
Text: SECTION 2 Transient Voltage Suppressor Arrays Page Quick Reference Guide 8 Pin DIP TVS Diode Array - 4 and 6 Line DA Series: DA Series: 16 Pin DIP TVS Diode Array - 8 and 12 Line 16 Pin Hermetic DIP TVS Diode Array -1 5 Line DLZ Series: EMC Series: 16 Pin S0-16L TVS/Low Pass L/C Filter Array
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S0-16L
PLC01-6:
PLC03-6:
OT-143
OT-23
PSM712
S52B2
B02-431-81Q1
BQ2-431-228S
TVS Diode
diode array
S020L
SO 273
tvs diode 225
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