diode sv 03
Abstract: 1ss388
Text: 1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 SV Top View Marking Code: "SV" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value
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1SS388
OD-523
OD-523
diode sv 03
1ss388
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Untitled
Abstract: No abstract text available
Text: SKKT 27, SKKT 27B, SKKH 27 THYRISTOR SEMIPACK 1 Thyristor / Diode Modules NOMP NOOP= NDOP QJOPM R BS I G1&321.1 K&0.% +- 5- '2).-.* -7%(&'2-)H N YSS UASS UBSS UTSS N VSS UCSS U]SS U@SS QJIN R CT I G*2)> UVSW J5 R VC XEH MZZJ CT[SV? MZZJ CT¥SV? MZZ$ CT[SV?
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Sj Schottky Rectifier
Abstract: No abstract text available
Text: SENSITRON 1N6660, 1N6660R SJ, SX, SV SEMICONDUCTOR TECHNICAL DATA DATASHEET 4300, Rev- HERMETIC POWER SCHOTTKY RECTIFIER Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • •
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1N6660,
1N6660R
SJ6660,
SX6660
SV6660
Sj Schottky Rectifier
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1N4475
Abstract: 1N4465 1N4469 1N4474 1N4464 Zener diode zener diode 1N4464 1N4478 1N4477 1N4471 1N4479
Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev SJ SX SV Zener 1.5W DIODE • Ultra-low reverse leakage current • Zener voltage available from 36V to 160V • Sharp Zener knee • Metallurgically bonded
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1N4464
1N4494
1N4464US
1N4494US
1N4475
1N4465
1N4469
1N4474
1N4464 Zener diode
zener diode 1N4464
1N4478
1N4477
1N4471
1N4479
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C 5074 transistor
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1N6102A/US thru 1N6137A/US TECHNICAL DATA DATA SHEET 5074, REV. – SJ SX SV Transient Voltage Suppressor Diode, 500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N6102A/US
1N6137A/US
1N6102A/US
1N6103A/US
1N6104A/US
1N6105A/US
1N6106A/US
1N6107A/US
1N6108A/US
1N6109A/US
C 5074 transistor
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d 5072 transistor
Abstract: d 5072 1N6171AUS
Text: SENSITRON SEMICONDUCTOR 1N6138A/US thru 1N6173A/US TECHNICAL DATA DATA SHEET 5072, REV. – SJ SX SV Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N6138A/US
1N6173A/US
1N6138A/US
1N6139A/US
1N6140A/US
1N6141A/US
1N6142A/US
1N6143A/US
1N6144A/US
1N6145A/US
d 5072 transistor
d 5072
1N6171AUS
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1N4465
Abstract: 1N4475 1N4474 1N4464 1N4464US 1N4494 1N4494US SN63 zener diode 1N4464 1N4477
Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev A SJ/ SX /SV SS Zener 1.5W DIODE • • • • • • Ultra-low reverse leakage current Zener voltage available from 9.1V to 160V Sharp Zener knee Metallurgically bonded
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1N4464
1N4494
1N4464US
1N4494US
1N4464/US
1N4465/US
1N4466/US
1N4467/US
1N4468/US
1N4469/US
1N4465
1N4475
1N4474
1N4494
1N4494US
SN63
zener diode 1N4464
1N4477
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Untitled
Abstract: No abstract text available
Text: 1N6108A thru 1N6136A Standard 500W Bi-directional TVS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5074, REV. C AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Bi-directional Transient Voltage Suppressor Diode, 500W
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1N6108A
1N6136A
MIL-PRF-19500/516
1N6108A/US
1N6109A/UStasheet
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Untitled
Abstract: No abstract text available
Text: 19-0186; Rev 0; 10/93 Low-Voltage Input, 3V /3.3V /SV/ A djustable Output, Step-Up DC-DC Converters _ Features ♦ 1V to 6.2V Input Guarantees Start-Up Under Load The devices include an Active Rectifier that eliminates the need for an external catch diode, and permits regulation even
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MAX777/MAX778/MAX779â
150kHz)
MAX778EPA
MAX778ESA
MAX778MJA
MAX779CSA
MAX779C/D
MAX779EPA
MAX779CPA
MAX779ESA
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M109
Abstract: 5M470
Text: 1DI4O O M -O 5O 400 a POWER TRANSISTOR MODULE Features • hFE*'“ ^ High DC Current Gain • High speed sw itching ing Free W heeling Diode • Insulated Type •Applications • ^ 1 8 'hT A 'vT 'sV Power S w itching • A C i— AC M o to r Controls
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E82988
I95t/R89
Shl50
M109
5M470
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301L
Abstract: 2FI50F T151 T460 T760 1fm5
Text: 2 R 5 F 2 x 5 0 A FAST RECOVERY DIODE MODULE • * ttS : Features • i6ls]iIB$IH)#r$Sv,' • £ IM I8 i0 < « Short Reverse Recovery Time Variety of Connection Menu • #fiH&M Insulated Type ■ f f lii : Applications • Arc-W elders • 7 >;•— — Kffl
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2R50FC2X50A)
2FI50F
-060i
50/60HZ
11S19
l95t/R89
301L
2FI50F
T151
T460
T760
1fm5
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Untitled
Abstract: No abstract text available
Text: 2DI50M -120 50A IW & ’+ jä I Outline Drawings / ' 7 — h 7 POWER TRANSISTOR MODULE Features • • L' High Arm Short Circuit Capability • hFE*''Sv.' High DC Current Gain • ~7X) x) ' s W A K F*93R Including Freewheeling Diode • i f e t I n s u l a t e d Type
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2DI50M
E82988
95t/R
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transistor w4
Abstract: KL9A 2DI50M-120 csr rf
Text: 2DI50M -120 50A / ' 7 — IW & ’+ jä I Outline Drawings h 7 POWER TRANSISTOR MODULE Features • • L' High Arm Short Circuit Capability • hFE*''Sv.' High DC Current Gain • ~7X ) x) 's W A K F*93R Including Freewheeling Diode • i f e t I n s u l a t e d Type
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2DI50M-120
E82988
OOOOOC30000
transistor w4
KL9A
csr rf
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ESAE83-004
Abstract: P460 SC-65 T151 T760
Text: ESAE83-004 6oa IW H N ii : Outline Drawings » a y | > * - / < i J 7 r S r' f » - K S C H O T T K Y B A R R IE R DIODE ^ 3.2 to. I V 5 *».i 2.0 7.2«# • # £ : Features • <sv, JEDEC EIAJ Low VF SC-65 Super high speed switching. Connection Diagram High reliability by planer design
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ESAE83-004I60A)
SC-65
500ns
l95t/R89
ESAE83-004
P460
SC-65
T151
T760
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SV-03 diode
Abstract: diode sv 03
Text: SKM 200GB176D .0 2 ME N8? * 5 + %41(/:-+( +;(0-=-(D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 ME N8 B8 .O 2 QEH N8 QFHH 7 M@H C .0 2 RH N8 QRH C UHH C W MH 7 QH [+ .0 2 ME N8 MQH C .0 2 RH N8 Q]H C UHH C .O 2 QEH N8 QQHH C .03+( 2 ME N8 MQH
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200GB176D
SV-03 diode
diode sv 03
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Untitled
Abstract: No abstract text available
Text: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)
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AG01A
AG01Y
AG01Z
FMB-29
FMB-29L
FMB-32
EL02Z
SFPB-66
SFPB-69
SFPB-72
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fmi switch driver
Abstract: DDF2311 5S53 dd450 DD212 DD620 DD211 DD211B DD311A HP5082-0001
Text: FILM AVNET INC/ FILM MELEC M IC R O ELE C TR O N IC S The Ultimate h M iaoelearortc and Intefconnect Technology IN C . Packaging .M E H S 'iö b G J> DODOlHb T • AVNT 7= y z - z i Microwave PIN Diode Drivers 108 Centennial Drive, Peabody, MA 01960. USA • TÉL.' 508 531-8901, FA X 1508) S32-9954
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FAX-1508)
S32-9954
MILSTD-1772
DD212)
28-channel
DD2850)
MIL-STD-1772
fmi switch driver
DDF2311
5S53
dd450
DD212
DD620
DD211
DD211B
DD311A
HP5082-0001
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ST134W
Abstract: st-1187
Text: e * SLOTTED OPTICAL SWITCH q D Pïm m m ics H22A4/5/6 SYMBOL h ir íiT l 1 " tL 4b ! bi SECTION X - X LEAD PROFILE ST134WH A A, b fa. □, 0, e 9> “ JfllUMETERS MAX, UN. 50.7 11.0 3.0 3.2 ,750 .600 .50 NOM. 11.6 1Í1.0 3.0 S3 7.5 6.S 2.3 2.8 I s s, r 6.1$
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H22A4/5/6
ST134W
ST1187
st-1187
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MOC3023SM
Abstract: MOC3023SR2M MOC30* inductive triac analog control for inductive loads
Text: 6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT 250/400 VOLT PEAK MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M MOC3023M DESCRIPTION The MOC301XM and MOC302XM series are optically isolated triac driver devices. These devices contain a AlGaAs infrared emitting diode and a light activated silicon bilateral switch, which functions like a triac. They
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MOC3010M
MOC3011M
MOC3012M
MOC3020M
MOC3021M
MOC3022M
MOC3023M
MOC301XM
MOC302XM
E90700
MOC3023SM
MOC3023SR2M
MOC30* inductive
triac analog control for inductive loads
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diode SV 0356
Abstract: motor driver IRFZ44 IRFZ44 equivalent IRFZ44 pwm pv charge controller circuit diagram LT1160 77548 gate drive for mosfet irfz44 IRFZ44 LT1162 IRFZ44 mosfet
Text: Final Electrical Specifications LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers July 1995 U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can
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LT1160/LT1162
1160/LT1162
180ns
000pF
SOL24
LT1158
diode SV 0356
motor driver IRFZ44
IRFZ44 equivalent
IRFZ44 pwm pv charge controller circuit diagram
LT1160
77548
gate drive for mosfet irfz44
IRFZ44
LT1162
IRFZ44 mosfet
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sensor hall 95A
Abstract: 95A sensor hall 95A hall effect sensor D41A3100L hall current sensor 95A 5.1 home theatre assembling Celduc Relais 95A magnetic sensor HALL 95A HALL EFFECT SENSOR 95A
Text: www.celduc.com Selection Guide ED G E T H AT CO M P E TIVE TI PRO SOLID STATE RELAYS OU U D TO S E RV E Y MAGNETIC SENSORS . REED RELAYS AND SWITCHES elais Word of Introduction Dear Customers, dear Readers, T IV E ED Keep our customers satisfied !! This “selection guide” catalogue is a picture of the products that are available
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GUIDCR02
sensor hall 95A
95A sensor hall
95A hall effect sensor
D41A3100L
hall current sensor 95A
5.1 home theatre assembling
Celduc Relais
95A magnetic sensor
HALL 95A
HALL EFFECT SENSOR 95A
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brushless DC motor 200w
Abstract: LT3526
Text: LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off
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LT1160/LT1162
1160/LT1162
180ns
000pF
LT1910
LTC1922-1
LTC1923
28-Pin
11602fb
brushless DC motor 200w
LT3526
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n channel a type irfz44 mosfet
Abstract: IRFZ44 pwm pv charge controller circuit diagram IRFZ44 parallel Application irfz44 DIODE 1336 COMPLEMENT OF IRFZ44 IRFZ44 mosfet motor driver IRFZ44 LT3526 RCR-664D-221KC
Text: LT1336 Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator Features n n n n n n n n n n Description Floating Top Driver Switches Up to 60V Internal Boost Regulator for DC Operation 180ns Transition Times Driving 10,000pF Adaptive Nonoverlapping Gate Drives Prevent
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LT1336
180ns
000pF
LT1158
LT1160
LTC4446
1336fa
n channel a type irfz44 mosfet
IRFZ44 pwm pv charge controller circuit diagram
IRFZ44 parallel
Application irfz44
DIODE 1336
COMPLEMENT OF IRFZ44
IRFZ44 mosfet
motor driver IRFZ44
LT3526
RCR-664D-221KC
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12v 10A dc driver motor control mosfet
Abstract: LT3526 motor driver IRFZ44 IRFZ44 pwm 55585-A2 LT1160 LT1162 IRFZ44 equivalent IRFZ44 mosfet voltage regulator 48V
Text: LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off
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LT1160/LT1162
1160/LT1162
180ns
000pF
LT1910
LTC1922-1
LTC1923
28-Pin
11602fb
12v 10A dc driver motor control mosfet
LT3526
motor driver IRFZ44
IRFZ44 pwm
55585-A2
LT1160
LT1162
IRFZ44 equivalent
IRFZ44 mosfet
voltage regulator 48V
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