Untitled
Abstract: No abstract text available
Text: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the
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1N4151W-V
DO-35
1N4151,
LL4151.
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
1N4151W-V
1N4151W-V-GS18
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Thyristor ABB ys 150
Abstract: No abstract text available
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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Diode BAV99 SOT23
Abstract: No abstract text available
Text: BAW56-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a dual anode to
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BAW56-V
BAL99,
BAV99,
BAV70.
AEC-Q101
2002/95/EC
2002/96/EC
OT-23
BAW56-V
BAW56-V-GS18
Diode BAV99 SOT23
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Untitled
Abstract: No abstract text available
Text: 1N4448W-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the
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1N4448W-V
DO-35
1N4448,
LL4448,
OT-23
IMBD4448
AEC-Q101
OD-123
GS18/10K
10K/box
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PDF
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85721
Abstract: 1N4151 1N4151W-V 1N4151W-V-GS08 1N4151W-V-GS18 LL4151
Text: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case with the
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1N4151W-V
DO-35
1N4151,
LL4151.
2002/95/EC
2002/96/EC
OD-123
1N4151W-V-GS18
1N4151W-V-GS08
85721
1N4151
1N4151W-V
1N4151W-V-GS08
LL4151
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PDF
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Untitled
Abstract: No abstract text available
Text: BAW56-V Vishay Semiconductors Small Signal Switching Diode, Dual Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common e3 anode • This diode is also available in other configurations including: a single with type designation BAL99, a dual anode to cathode with type
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BAW56-V
BAL99,
BAV99,
BAV70.
2002/95/EC
2002/96/EC
OT-23
BAW56-V
BAW56-GS18
BAW56-GS0s
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PDF
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Untitled
Abstract: No abstract text available
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBD914 SMALL SIGNAL SWITCHING DIODE SOT-23 _FEATURES ♦ Silicon Epitaxial Planar Diode ♦ Fast switching diode in case SOT-23, especially suited for automatic insertion. _MECHANICAL DATA Case: SOT-23 Plastic Package
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MMBD914
OT-23
OT-23,
OT-23
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Untitled
Abstract: No abstract text available
Text: GSD2004A-V Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual common-anode e3 diode, especially suited for applications requiring high voltage capability • Lead Pb -free component
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GSD2004A-V
2002/95/EC
2002/96/EC
OT-23
O-236AB)
GSD2004A-V-GS18
GSD2004A-V-GS08
08-Apr-05
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MAD1104
Abstract: 628-200
Text: MAD1104 and MAD1104e3 Switching Diode Array Steering Diode TVS Array SCOTTSDALE DIVISION APPEARANCE WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package
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MAD1104
MAD1104e3
14-PIN
MAD1104,
628-200
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1N4148G
Abstract: No abstract text available
Text: 1N4148G SMALL-SIGNAL DIODE Reverse Voltage 100 Volts Peak Forward Current - 150mA DO-35 FEATURES .022 0.56 .018 (0.46) 1.02 (26.0) MIN. * Silicon Epitaxial Planar Diode * Fast switching diode. .165 (4.2) MAX. * Lead free product .079 (2.0) DIA. MAX. 1.02 (26.0)
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1N4148G
150mA
DO-35
DO-35
1N4148G
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UM9701
Abstract: No abstract text available
Text: UM9701 PIN DIODE Low Resistance, Low Distortion, RF Switching Diode Features Description • • • • • • The UM9701 PIN diode was designed for low resistance at low forward bias current and low reverse bias capacitance. This unique Microsemi design
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UM9701
UM9701
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Untitled
Abstract: No abstract text available
Text: 1N4150W-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • For general purpose and switching • This diode is also available in other case styles including the DO-35 case with the type
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1N4150W-V
DO-35
1N4150,
LL4150.
AEC-Q101
OD-123
GS18/10K
10K/box
GS08/3K
15K/box
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS16D-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC
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BAS16D-V
OT-23
BAS16
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
BAS16D-V
BAS16D-V-GS18
BAS16D-V-GS08
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DKR200AB60
Abstract: No abstract text available
Text: DIODE MODULE（NON-ISOLATED TYPE） DKR200AB60 DKR200AB60 is a high speed fast recovery dual diode module designed for high power switching application. DKR200AB60 is suitable for high frequency application requiring low loss and high speed control. ● High Speed Diode trr≦200ns
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DKR200AB60
DKR200AB60
trr200ns
100Aeach
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BAT63-07W
Abstract: No abstract text available
Text: BAT63-07W Silicon Schottky Diode 3 Low barrier diode for detectors up to GHz 4 frequencies For high-speed switching applications Zero bias detector diode 2 1 4 1 3 2 VPS05605 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT63-07W
VPS05605
EHA07008
OT343
Jul-06-2001
BAT63-07W
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100V 60A Mosfet
Abstract: mosfet 50v 30a LTP60N10
Text: LTP60N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application • DC to DC converter • For high-frequency switching
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LTP60N10
to175
100V 60A Mosfet
mosfet 50v 30a
LTP60N10
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Untitled
Abstract: No abstract text available
Text: 1N4448 Small Signal Diodes FEATURES DO-35 << max. 0.0 7 9 2.0 ♦ Silicon Epitaxial Planar Diode ♦ Fast switching diode. ♦ This diode is also available in other case styles including: the SOD-123 case with the type designation 1N4448W, the MiniMELF case with the ^
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1N4448
DO-35
OD-123
1N4448W,
LL4448,
IMBD4448.
DO-35
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PDF
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5SLA 3600E170300
Abstract: 5SYA2039 3600E170300
Text: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 HiPak Single DIODE Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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3600E170300
C9113
CH-5600
5SLA 3600E170300
5SYA2039
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diode
Abstract: Diode MarkING N smd diode UM smd diode UM 09 smd diode "marking n" smd rf transistor marking BAR65-02W marking V diode smd diode UM 08
Text: Diodes SMD Type Silicon RF Switching Diode BAR65-02W SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Low loss, low capacitance PIN-diode Band switch for TV-tuners +0.1 1.6-0.1 0.77max +0.05 0.1-0.02 0.07max Series diode for mobile communication transmit-receiver switch
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BAR65-02W
OD-523
77max
07max
diode
Diode MarkING N
smd diode UM
smd diode UM 09
smd diode "marking n"
smd rf transistor marking
BAR65-02W
marking V diode
smd diode UM 08
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eft303
Abstract: jSw Diode diode b29 T460 ERE74 diode JSW JSW 70 ERE24 P930 T151
Text: E R E 2 4 ' E R E 7 4 2 o a X ± ' < T? - 9 4 * - Y FAST RECOVERY DIODE Features • H7 7 * • a Glass passivated chip Stud mounted *. Applications • Switching power supplies • ft' fJi' Free-wheel diode • ' <7— Snubber diode • Others. Maximum Ratings and Characteristics
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ERE24-ERE74
ERE24
ERE74
50HzIE
Mftl80\
Eft30
19S24
I95t/R89)
eft303
jSw Diode
diode b29
T460
ERE74
diode JSW
JSW 70
ERE24
P930
T151
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a12 SOT363
Abstract: W1 sot 363
Text: MBD4448HAQW/HADW/HCDW/HSDW/HTW Switching Diode Preliminaty Small Signal Diode SOT-363 Features Fast switching speed Surface device type mounting Moisture sensitivity level 1 High Conductance Power Dissipation For General Purpose Switching Applications
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MBD4448HAQW/HADW/HCDW/HSDW/HTW
OT-363
OT-363
MIL-STD-202,
C/10s
051BSC
083BV
a12 SOT363
W1 sot 363
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Untitled
Abstract: No abstract text available
Text: SUB610 SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature
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SUB610
OT-363
06-JAN-14
KSD-D5S004-002
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Untitled
Abstract: No abstract text available
Text: LS4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • High forward current capability • QuadroMELF package • AEC-Q101 qualified • Material categorization:
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LS4150
AEC-Q101
OD-80
GS18/10K
10K/box
GS08/2
LS4150
LS4150GS18
LS4150GS08
2011/65/EU
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PDF
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MMBD4448W
Abstract: SOT-323 MARKING M sot323 marking K MARKING K SOT323
Text: WEITRON MMBD4448W Surface Mount Switching Diode SWITCHING DIODE 250mAMPERS 100VOLTS Features: * High Speed 4ns * Low Rever Leakage Current * Surface Mount Package Ideally Suited for Automatic Insertion 3 Mechanical Data: 1 2 * Case: SOT-323, Molded Plastic
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MMBD4448W
250mAMPERS
100VOLTS
OT-323,
MIL-STD-202
OT-323
SC-70)
OT-323
100mA
MMBD4448W
SOT-323 MARKING M
sot323 marking K
MARKING K SOT323
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