T589N
Abstract: TO41 TO-50 TO57 disc thyristor TO100 D1029N D1049N D2209N D2659N
Text: Anpreßkraft Scheibenbauelemente Clamping Force Disc-Components Diagramm: Federsäulenkurven 1 - 8 für Komplettsätze for complete stacks Diode Diode D428N D448N D660N D748N D758N D798N D1029N D1049N D2209N D2228N D2659N D5809N D8019N Anpreßkraft [kN] Clamping Force [kN]
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D428N
D448N
D660N
D748N
D758N
D798N
D1029N
D1049N
D2209N
D2228N
T589N
TO41
TO-50
TO57
disc thyristor
TO100
D1029N
D1049N
D2209N
D2659N
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T1081N
Abstract: T553N eupec igbt EUPEC T1503N kuka-2003-inhalt.qxd T2351N T2563 T1049 T1601 T1869N
Text: kuka-2003-inhalt.qxd 24.04.2003 IGBT 10:22 Uhr Seite 34 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 34 Overview Phase Control Thyristors in Disc Housings VDRM - Concept 8000 V T201N 7000 V 5200 V 5000 V 4800 V T501N T551N T553N
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kuka-2003-inhalt
T1901N
T1503N
T201N
T1081N
T1201N
T501N
T551N
T553N
T739N
T1081N
T553N
eupec igbt
EUPEC T1503N
kuka-2003-inhalt.qxd
T2351N
T2563
T1049
T1601
T1869N
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new bright R288-2
Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
Text: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark ＊:no stuff P@:with PR stuff ＊@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz
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200/266/333MHZ
Y1-27MHz
Y2-14
318MHz
ICS950405
M10/M11
K8T800
Y5-32
768MHz
266/533MB/s
new bright R288-2
24c08an
new bright R288
ac14g
ICS950405
CADIN14
K8T800
y532
quanta
PHD108NQ03LT
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PDF
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smd diode 106a
Abstract: smd 106a SOD106A diode t37 BYG90-90 philips Schottky diode very high current schottky diode diode package outline schottky barrier rectifier diode 15 A schottky barrier
Text: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 FEATURES DESCRIPTION • Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD
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BYG90-90
BYG90-90
OD106A
7110fl2b
711002b
D1G3223
smd diode 106a
smd 106a
SOD106A
diode t37
philips Schottky diode
very high current schottky diode
diode package outline
schottky barrier rectifier diode 15 A
schottky barrier
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PDF
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smd diode 106a
Abstract: DIODE MARKING B85 smd diode byg SOD106A smd 106a byg 100 diode smd diode 1S BYG90-90 B85 diode smd diode byg 20
Text: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 FEATURES DESCRIPTION • Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD
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OCR Scan
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BYG90-90
BYG90-90
OD106A
b-100
7110fl2b
711002b
01032B3
smd diode 106a
DIODE MARKING B85
smd diode byg
SOD106A
smd 106a
byg 100 diode
smd diode 1S
B85 diode
smd diode byg 20
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PDF
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Untitled
Abstract: No abstract text available
Text: P D - 917 0 5 International l R Rectifier IRF7322D1 PRELIMINARY FETKY MOSFET/ Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low V F Schottky Rectifier Generation 5 Technology
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OCR Scan
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IRF7322D1
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PDF
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ITT DIODE
Abstract: 1n4151 ITT 150D 1N4151 500D LL4151 INTERMETALL
Text: ITT SEHICOND/ INTERHETALL blE T> Mt Mbfl2711 QGQ31Sb 040 * i s i LL4151 Silicon Epitaxial Planar Diode Cathode Mark -1 5 * 0 .1 -H fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JE D E C 1N4151
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OCR Scan
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4bfl2711
QGQ31Sb
LL4151
1N4151
DDD31SÃ
ITT DIODE
1n4151 ITT
150D
1N4151
500D
LL4151
INTERMETALL
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PDF
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kdi 64537 switch
Abstract: 64537
Text: ULTRA-BROADBAND DROP-IN REMOVABLE CONNECTORS REFLECTIVE SP4T DIODE SWITCH MODEL SWM-1400 0.5-18.0 GHz GENERAL INFORMATION The Model SW M -1400 SP4T PIN Diode switch operates over the full fre quency range 0 .5 -1 8 .0 G H z in a single unit. KDI/Triangle has integrated
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OCR Scan
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MIL-STD-883.
SWM-1400
50GHz
400GH?
000GH/
400GHz
kdi 64537 switch
64537
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PDF
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OLD222
Abstract: Infrared Emitting Diode OLP222 Light Emitting Diodes diode t37
Text: O K I electronic OLP222 components GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD222 is a high-output GaAl A s infrared light em ission diode sealed with a glass lens in a To18 case. Its light em ission w ave is peaks at 910 nm. Because of its sharp directivity, multiple units
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OLP222_
OLD222
To-18
OLD222
2i42i4D
D01flÃ
Infrared Emitting Diode
OLP222
Light Emitting Diodes
diode t37
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PDF
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CHN 952
Abstract: TD100
Text: vtS H A Y ▼ _TSML3700 Vishay Telefunken GaAs/GaAIAs Infrared Emitting Diode in SMT Package Description T S M L3700 is an infrared em itting diode in G aAIAs on G aAs te chn olo gy in a m iniature P L -C C -2 SM D package. It has been designed to m eet the increasing dem and
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OCR Scan
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TSML3700
L3700
D-74025
20-May-99
CHN 952
TD100
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PDF
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Untitled
Abstract: No abstract text available
Text: Temic TSMS3700 S t m i c o n d u c i u r s GaAs Infrared Emitting Diode in SMT Package Description T SM S 3700 is a standard G aA s infrared em itting diode in a m iniature P L -C C -2 package. Its fiat w indow provides a w ide aperture, m aking it ideal for use w ith external optics.
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OCR Scan
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TSMS3700
15-Jul-96
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PDF
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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OCR Scan
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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PDF
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Schaffner IU 1237
Abstract: Schaffner 1237 NSG506C 7R2R23
Text: C T SG S-THO M SO N LDP24M TRANSIL LOAD DUMP PROTECTION PRELIMINARY DATASHEET • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION . HIGH SURGE CURRENT CAPABILITY: 30 A / 40 ms EXPONENTIAL WAVE a COMPLIANT WITH MAIN STANDARDS
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OCR Scan
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LDP24M
-SAEJ1113A.
S0-10TM
Schaffner IU 1237
Schaffner 1237
NSG506C
7R2R23
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PDF
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Untitled
Abstract: No abstract text available
Text: TRM7934AN OC-48 Transmitter Description The TRM7934AN is a lightwave transmitter for OC-48. Features • Complied with SONET/SDH standard • MQW-DFB laser diode • Operation from 52Mb/s to 2488.32Mb/s at 1.55 wavelength • 50£2, AC-coupled interface •
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TRM7934AN
OC-48
TRM7934AN
OC-48.
52Mb/s
32Mb/s
44Sb2G5
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: GEC S i PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4315 -1.2 ITE15F12/ITE15C12 POWERLINE N-CHANNELIGBT WITH OPTIONAL ULTRAFAST DIODE The ITE15X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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OCR Scan
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DS4315
ITE15F12/ITE15C12
ITE15X12
bflS22
002b42b
ITE15X12
37bfi52B
DD2bM27
DD2b42fl
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PDF
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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OCR Scan
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PDF
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ITE15F12
Abstract: No abstract text available
Text: 5Ü GEC PLESS EY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4315-1.2 ITE15F12/ITE15C12 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE15X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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OCR Scan
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DS4315-1
ITE15F12/ITE15C12
ITE15X12
Each11
002biÂ
37bfi522
ITE15F12
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PDF
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Untitled
Abstract: No abstract text available
Text: OPTO DIODE CORP SSE D • kflOmfl 000013Ü TTO ■ O P D / - y / - /J> HIGH-POWER GaAIAs T-1V 4 IR EMITTERS OD-8812 FEATURES .217 • Cost effective plastic package .055 ir • 880nm peak emission • Wide angle of emission MIN 0 20 SQ .060 MIN • High reliability LPE IRLED chips
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OCR Scan
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OD-8812
880nm
OD-8812
T-13/4
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PDF
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T3B diode
Abstract: 1SV160 t37s
Text: TO SHIBA ÍDIS CRE TE /OP TO} b7 9097250 TOSHIBA DISCRETE/OPTO I a i i j ^ • DE I TDTTESO □□□T37S ñ . Q 67C 0937 5 Silicon Epitaxial Planar Type ■ w w Variable Capacitance Diode Unit in mm AFC APPLICATION FOR FM RECEIVER. + Û 5 2 .5 -0 1 3 +CL2 5
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OCR Scan
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1SV160
OT-23MOD
L5-CL15
---1SV160
T3B diode
1SV160
t37s
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PDF
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TD-220AB
Abstract: ESAB33
Text: ESAB33 CS i5A) K FAST RECOVERY DIODE ‘ Features • . ® & 6 L m * v 7 W h e b / 4 x /j '- f s o Soft recovery, low noise. m mm&m High reliability C o n n e ctio n D iagram : A p p lica tio n s High speed power sw itching. M a xim u m Ratings and C haracteristics
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OCR Scan
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ESAB33
TD-220AB
SC-46
0Q0bG31
Tj-125
000b033
TD-220AB
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PDF
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2N4949
Abstract: 2N4948
Text: MO TO R O L A SC DIODE S/ OPT O 2SE D b3t72-SS 0000=130 4 • _ T -3 2N4948 2N4949 PN Unijunction Transistors Silicon PN Unijunction Transistors , . . d e s ig n e d fo r m ilita ry a n d in d u s tria l u s e in p u lse , tim in g , trig g e rin g , se n sin g ,
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OCR Scan
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b3t72-SS
2N4948
2N4949
2N4949
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PDF
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TRF 530
Abstract: 317 lz K122 ST Low Forward Voltage Schottky Diode 2G21 FCQ10A03L TEG 105
Text: SCHOTTKY BARRIER DIODE 10A/30V fcqioao3l 3. K . 122 FEATURES MAX o S im ila r to T 0 -2 2 0 A B C ase 'MAXi 10. 3 .4051 3. 4( . 1M )„ . MAX "I/ Ä H « A ~W O F u lly M olded Iso latio n o E x tre m e ly L ow F o rw a rd V o ltag e D rop o D u a l D iodes—C athode C om m on
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OCR Scan
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FCQ10A03L
O-220AB
035IMA
FCQ10A.
bbl5123
bbl5123
0002Q22
TRF 530
317 lz
K122
ST Low Forward Voltage Schottky Diode
2G21
FCQ10A03L
TEG 105
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PDF
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1RF9640
Abstract: IRF9640
Text: International |g»i Rectifier HEXFET P o w e r M O S F E T • • • • • • • 4855455 0Ql4 2 t37 - 1NR PD9422B IRF9640 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements
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OCR Scan
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IRF9640
-200V
1RF9640
IRF9640
|
PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCED POIilER T EC H N O L OGY b lE •K W/<m w POWER MOS IV D ■ OS ST TO T 000076«} T37 M A V P A d v a n ced po w er Te c h n o l o g y APT1004RCN 1000V 3.6A APT904RCN 900V 3.6A APT1004R2CN 1000V 3.3A APT904R2CN 900V 3.3A 4.00Q 4.00Q 4.20Q 4.20Q
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OCR Scan
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APT1004RCN
APT904RCN
APT1004R2CN
APT904R2CN
904RCN
1004RCN
904R2CN
1004R2CN
APT1004R/1
004R2GN
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PDF
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