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    DIODE TA9 Search Results

    DIODE TA9 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE TA9 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    G8060

    Abstract: ruru8060 RUR 0820 TB-01
    Text: [ /Title RUR G8060 /Subject (80A, 600V Ultrafa st Diode) /Autho r () /Keywords (80A, 600V Ultrafa st Diode, Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power Switch ing Cir- RURU8060 Data Sheet October 2001 File Number


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    G8060 RURU8060 RURU8060 G8060 RUR 0820 TB-01 PDF

    RURU5060

    Abstract: TA9909
    Text: RURU5060 Data Sheet January 2000 File Number 2940.3 50A, 600V Ultrafast Diode Features The RURU5060 is an ultrafast diode with soft recovery characteristics trr < 65ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial


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    RURU5060 RURU5060 TA9909 PDF

    RURU5060

    Abstract: No abstract text available
    Text: RURU5060 Data Sheet January 2000 File Number 2940.3 50A, 600V Ultrafast Diode Features The RURU5060 is an ultrafast diode with soft recovery characteristics trr < 65ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial


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    RURU5060 RURU5060 PDF

    013D3

    Abstract: RUR1560 UHC MOS Application of irf840 equivalent irf840 irf840 equivalent irf840 power supply mos 7121 power diode 600V 15A IRF840
    Text: RUR1S1560S September 2002 Data Sheet [ /Title HUF7 6013P 3, HUF76 013D3 S /Subject (20A, 20V, 0.022 Ohm, NChannel, Logic Level Power MOSFETs) /Autho r () /Keywords (Intersil, Semiconductor, NChannel, Logic Level UltraF ET Power MOS- 15A, 600V Ultrafast Diode


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    RUR1S1560S 6013P HUF76 013D3 RUR1S1560S 013D3 RUR1560 UHC MOS Application of irf840 equivalent irf840 irf840 equivalent irf840 power supply mos 7121 power diode 600V 15A IRF840 PDF

    UHC MOS

    Abstract: RUR1S1560S9A INTERSIL Cross Reference Search 013D3
    Text: RUR1S1560S September 2002 Data Sheet [ /Title HUF7 6013P 3, HUF76 013D3 S /Subject (20A, 20V, 0.022 Ohm, NChannel, Logic Level Power MOSFETs) /Autho r () /Keywords (Intersil, Semiconductor, NChannel, Logic Level UltraF ET Power MOS- 15A, 600V Ultrafast Diode


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    RUR1S1560S 6013P HUF76 013D3 RUR1S1560S O-263 UHC MOS RUR1S1560S9A INTERSIL Cross Reference Search PDF

    MCT thyristor

    Abstract: mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6
    Text: MCTV35P60F1D Semiconductor April 1999 AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor MCT OLET S OBS S PROCE Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC


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    MCTV35P60F1D -600V O-247 150oC factor/100) MCT thyristor mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6 PDF

    MCT thyristor

    Abstract: MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60
    Text: MCTV35P60F1D S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT with Anti-Parallel Diode March 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC • 800A Surge Current Capability A • 800A/µs di/dt Capability


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    MCTV35P60F1D -600V O-247 150oC factor/100) MCT thyristor MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60 PDF

    MCT thyristor

    Abstract: MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60
    Text: MCTV35P60F1D S E M I C O N D U C T O R April 1998 S DESIGN R NEW O F 2 F D E 35A, 600V ND P10 COMME CT3D65 NOT RE 3A65P100F2, M Thyristor MCT T See MC Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC


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    MCTV35P60F1D O-247 CT3D65 3A65P100F2, -600V 150oC factor/100) MCT thyristor MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60 PDF

    IRF620 application

    Abstract: TA9600 IRF620 TB334 transistor irf620
    Text: IRF620 Data Sheet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 5.0A, 200V Formerly developmental type TA9600. Ordering Information PACKAGE 1577.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


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    IRF620 TA9600. IRF620 application TA9600 IRF620 TB334 transistor irf620 PDF

    DF103B

    Abstract: DF378F NR231A alternator rectifier rectifier three phase 40a HRP2540 single phase half controlled rectifier
    Text: HRP2540 April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device


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    HRP2540 TA9673) O-220AB 25oC/W NR231A DF103B DF378F 09kgf DF103B DF378F NR231A alternator rectifier rectifier three phase 40a HRP2540 single phase half controlled rectifier PDF

    DF378F

    Abstract: DF103B HRP2540 NR231A
    Text: HRP2540 April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device


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    HRP2540 TA9673) O-220AB 25oC/W NR231A DF103B DF378F 09kgf DF378F DF103B HRP2540 NR231A PDF

    DF378F

    Abstract: DF103B HRP2540 NR231A single phase full controlled rectifier component list
    Text: HRP2540 December 2001 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device was designed for use as the output rectifier in the three


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    HRP2540 TA9673) DF378F DF103B HRP2540 NR231A single phase full controlled rectifier component list PDF

    NR231A

    Abstract: DF378F DF103B single phase full controlled rectifier component list HRP2540
    Text: HRP2540 April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device


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    HRP2540 TA9673) NR231A DF378F DF103B single phase full controlled rectifier component list HRP2540 PDF

    germanium

    Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
    Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014


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    I815/KTN 10I5/KTP 1923/KTN 380TM/KTN germanium kia 7208 KIA 7313 germanium transistor speaker protector PDF

    uncooled laser butterfly

    Abstract: lucent laser module Laser Diode sdh butterfly D370-Type lucent laser module D370 dfb laser diode high power TA-983
    Text: Uncooled D370/D371-Type Mini-DIL Laser Modules Lucent's uncooled m ultiquantum -well D370-type FabryPerot and uncooled DFB D371-type laser modules consist of a laser diode coupled to a single-mode fiber pigtail. The devices are packaged in a standard 8-pin


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    D370/D371-Type D370-type D371-type 14-pin TA-983 uncooled laser butterfly lucent laser module Laser Diode sdh butterfly lucent laser module D370 dfb laser diode high power TA-983 PDF

    Untitled

    Abstract: No abstract text available
    Text: H ^ r tm ^ s • « / < S e m ico n d ucto r mm M m m T 3 5 P 6 F 1 D \ 35A, 600V P-Type MOS Controlled hyristor MCT with Anti-Parallel Diode W tH O B ^ o E S IG N S - ApriM99n V r r : ^ S S OBSOLi ! i - - — 1 Package Featuw§ • 35A ,-6 00V JEDEC STYLE TO-247


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    ApriM99n O-247 factor/100) PDF

    Untitled

    Abstract: No abstract text available
    Text: HRP2540 S em iconductor April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device


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    HRP2540 TA9673) O-22QAB 1-25OC/W NR231A DF103B DF378F 09kgf PDF

    Untitled

    Abstract: No abstract text available
    Text: m i c r o e l e c t r o n i c s gr oup Advance Data Sheet February 1997 Lucent Technologies Bell Labs Innovations D371-Type Digital Uncooled DFB Mini-DIL Laser Module a High output power: typical 2.0 mW peak power coupled into single-mode fiber • Hermetically sealed active components


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    D371-Type TA-983 OC-3/OC-12 14-pin DS97-043LWP PDF

    lucent laser module

    Abstract: Lucent Laser 2000 lucent laser module D370 D370 D370-10F
    Text: Advance Data Sheet September 1997 microelectronics group Lucent Technologies Bell Labs Innovations D370-Type Digital Uncooled Mini-DIL Laser Module • High output power: typically 1.0 mW peak power coupled into single-mode fiber; 0.2 mW and 2.0 mW versions available


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    D370-Type TA-983 OC-3/OC-12 DS97-323LWP DS97-112LWP) lucent laser module Lucent Laser 2000 lucent laser module D370 D370 D370-10F PDF

    lucent laser module

    Abstract: Lucent Laser 2000 Laser Components
    Text: Advance Data Sheet September 1997 microelectronics group Lucent Technologies Bell Labs Innovations D373-Type Digital Uncooled 2.5 Gbits/s Mini-DIL Laser Module • High output power: typically 1.0 mW peak power coupled into single-mode fiber; 0.2 mW and 2.0 mW versions available


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    D373-Type TA-983 OC-48 STM-16 14-pin PS97-013LW lucent laser module Lucent Laser 2000 Laser Components PDF

    D370

    Abstract: No abstract text available
    Text: Advance Data Sheet February 1997 microelectronics group Lucent Technologies Bell Labs Innovations D370-Type Digital Uncooled Mini-DIL Laser Module • High output power: typically 1.0 mW peak power coupled into single-mode fiber. 0.2 mW and 2.0 mW versions available


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    D370-Type TA-983 OC-3/OC-12 OC-48 STM-1/STM-4/STM-16 DS97-1 PS96-002LWP-4) D370 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet January 1999 group Lucent Technologies Bell Labs Innovations D371-Type Digital Uncooled DFB FastLight Laser Module Hermetically sealed active components Internal back-facet monitor Qualification program: Bellcore TA-983 Applications • Long-reach SONET OC-3/OC-12 systems


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    D371-Type TA-983 OC-3/OC-12 14-pin 371-Type reduce344 99-022LW S98-283LW PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Data Sheet August 1998 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations D371-Type Digital Uncooled DFB FastLight Laser Module • Hermetically sealed active components ■ Internal back-facet monitor ■ Qualification program: Bellcore TA-983


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    D371-Type TA-983 OC-3/OC-12 14-pin 371-Type S98-283LW DS97-043LW PDF

    lucent DFB laser application

    Abstract: No abstract text available
    Text: Advance Data Sheet August 1997 microelectronics group Lucent Technologies Bell Labs Innovations A371-Type Analog Uncooled Isolated DFB Mini-DIL Laser Module • High output power: typically 2.0 mW peak power coupled into single-mode fiber ■ Hermetically sealed active components


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    A371-Type TA-983 DS97-316LW PS97-008LW lucent DFB laser application PDF