KDZ2.4EV
Abstract: KDZ10EV KDZ11EV KDZ12EV KDZ13EV KDZ15EV KDZ16EV KDZ18EV KDZ20EV KDZ22EV
Text: SEMICONDUCTOR TECHNICAL DATA KDZ2.0EV~24EV ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. ᴌNominal Voltage Tolerance About ᴦ6%. 1 A ᴌSmall Package : ESC E C B CATHODE MARK FEATURES 2
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KDZ24EV
KDZ10EV
KDZ11EV
KDZ13EV
KDZ22EV
KDZ20EV
KDZ18EV
KDZ15EV
KDZ16EV
KDZ2.4EV
KDZ10EV
KDZ11EV
KDZ12EV
KDZ13EV
KDZ15EV
KDZ16EV
KDZ18EV
KDZ20EV
KDZ22EV
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KTX411T
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTX411T EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES 1 ᴌIncluding two TR, Diode devices in TSV. DIM MILLIMETERS _ 0.2 A
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KTX411T
KTX411T
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24v zener diode
Abstract: KDZ10V KDZ11V KDZ12V KDZ13V KDZ15V KDZ16V KDZ18V KDZ20V KDZ22V
Text: SEMICONDUCTOR TECHNICAL DATA KDZ2.0V~24V ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK L K H F ᴌNominal Voltage Tolerance About ᴦ6%. A ᴌSmall Package : USC 1 E FEATURES
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15KDZ20V
KDZ22V
KDZ24V
KDZ20V
KDZ18V
KDZ15V
KDZ16V
KDZ12V
24v zener diode
KDZ10V
KDZ11V
KDZ12V
KDZ13V
KDZ15V
KDZ16V
KDZ18V
KDZ20V
KDZ22V
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C25V
Abstract: KDV262E
Text: SEMICONDUCTOR TECHNICAL DATA KDV262E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. FEATURES ᴌExcellent C-V Characteristics, and Small Tracking Error. ᴌUseful for Small Size Tuner. 1 A ᴌLow Series Resistance : rS=0.6ή Typ.
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KDV262E
C2V/C25V
1000p
470MHz
C25V
KDV262E
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alternator diode 35a
Abstract: alternator diode E35A23VDR E35A23VDS
Text: SEMICONDUCTOR E35A23VDS, E35A23VDR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. E F FEATURES ᴌAverage Forward Current : IO=35A. L2 ᴌZener Voltage : 23V Typ. POLARITY E35A23VDS (+ Type) G C L1 D E35A23VDR (- Type)
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E35A23VDS,
E35A23VDR
E35A23VDS
alternator diode 35a
alternator diode
E35A23VDR
E35A23VDS
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KTX311T
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTX311T EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES 1 ᴌIncluding two TR, Diode devices in TSV. DIM MILLIMETERS _ 0.2 A
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KTX311T
KTX311T
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C25V
Abstract: KDV269E
Text: SEMICONDUCTOR TECHNICAL DATA KDV269E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. FEATURES ᴌExcellent C-V Characteristics, and Small Tracking Error. ᴌUseful for Small Size Tuner. 1 A ᴌLow Series Resistance : rS=0.55ή Typ.
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KDV269E
C2V/C25V
1000p
470MHz
C25V
KDV269E
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E25A2CPS, E25A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ᴌAverage Forward Current : IO=25A. ᴌReverse Voltage : 200V Min. POLARITY L2 E F1 E25A2CPS (+ Type) B L1 G E25A2CPR (- Type)
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E25A2CPS,
E25A2CPR
E25A2CPS
100mA
100mA,
100mS
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32V zener
Abstract: alternator diode 50a alternator diode zener diode application E50A37VBR E50A37VBS
Text: SEMICONDUCTOR E50A37VBS, E50A37VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ᴌAverage Forward Current : IO=50A. ᴌZener Voltage : 37V Typ. POLARITY E50A37VBS (+ Type) E50A37VBR (- Type) K H MAXIMUM RATING (Ta=25ᴱ)
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E50A37VBS,
E50A37VBR
E50A37VBS
100mA,
100mS
32V zener
alternator diode 50a
alternator diode
zener diode application
E50A37VBR
E50A37VBS
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E30A2CPR
Abstract: E30A2CPS
Text: SEMICONDUCTOR E30A2CPS, E30A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ᴌAverage Forward Current : IO=30A. ᴌReverse Voltage : 200V Min. E POLARITY L2 F1 E30A2CPS (+ Type) B L1 G E30A2CPR (- Type)
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E30A2CPS,
E30A2CPR
E30A2CPS
100mA
100mA,
100mS
E30A2CPR
E30A2CPS
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alternator diode 35a
Abstract: 32V zener alternator diode E35A37VBR E35A37VBS
Text: SEMICONDUCTOR E35A37VBS, E35A37VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ᴌAverage Forward Current : IO=35A. ᴌZener Voltage : 37V Typ. POLARITY E35A37VBS (+ Type) E35A37VBR (- Type) K H MAXIMUM RATING (Ta=25ᴱ)
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E35A37VBS,
E35A37VBR
E35A37VBS
100mA,
100mS
alternator diode 35a
32V zener
alternator diode
E35A37VBR
E35A37VBS
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E25A2CPR
Abstract: E25A2CPS
Text: SEMICONDUCTOR E25A2CPS, E25A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ᴌAverage Forward Current : IO=25A. ᴌReverse Voltage : 200V Min. E POLARITY L2 F1 E25A2CPS (+ Type) B L1 G E25A2CPR (- Type)
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E25A2CPS,
E25A2CPR
E25A2CPS
100mA
100mA,
100mS
E25A2CPR
E25A2CPS
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KDV287E
Abstract: VARIABLE CAPACITANCE DIODE C25V
Text: SEMICONDUCTOR TECHNICAL DATA KDV287E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE UHF SHF TUNING. FEATURES ᴌExcellent C-V Characteristics, and Small Tracking Error. ᴌUseful for Small Size Tuner. 1 A ᴌLow Series Resistance : rS=1.9ή Typ.
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KDV287E
C2V/C25V
C2V/C25V
470MHz
KDV287E
VARIABLE CAPACITANCE DIODE
C25V
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KTX301U
Abstract: TRANSISTOR A1 TR
Text: SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ᴌIncluding two TR, Diode devices in USV. C A A1 2 C ᴌSimplify circuit design.
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KTX301U
100mA
KTX301U
TRANSISTOR A1 TR
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Z02W20VY
Abstract: tms3451 Z02W7.5V 682 MARKING SOT-23 Z02W10V Z02W11V C 2120 Y 9.1v zener diode 24v 2a zener diode 2188 zener diode
Text: SEMICONDUCTOR Z02W2.0V~24V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES E B L L ᴌSmall Package : SOT-23 3 G H A 2 D ᴌNormal Voltage Tolerance About ᴦ2.5%. 1
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Z02W2
OT-23
Z02W20V
Z02W18V
Z02W16V
Z02W15V
Z02W13V
Z02W24V
Z02W22V
Z02W20VY
tms3451
Z02W7.5V
682 MARKING SOT-23
Z02W10V
Z02W11V
C 2120 Y
9.1v zener diode
24v 2a zener diode
2188 zener diode
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KTX401U
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTX401U EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ᴌIncluding two TR, Diode devices in USV. 5 1 A 2 C ᴌSimplify circuit design.
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KTX401U
100mA
KTX401U
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KTX301U
Abstract: diode d1
Text: SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ᴌIncluding two TR, Diode devices in USV. 5 1 A 2 C ᴌSimplify circuit design.
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KTX301U
100mA
KTX301U
diode d1
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV350E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. FEATURES 1 A ᴌSmall Package. ESC Package E C B CATHODE MARK ᴌLow Series Resistance : rS=0.50ή(Max.) 2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC D F SYMBOL
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KDV350E
470MHz
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F15030
Abstract: c5v diode KDV1472
Text: SEMICONDUCTOR TECHNICAL DATA KDV1472 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. L K H F ᴌVariations of Capacitance Values is Little. A ᴌExcellent C-V Characteristics. 1 E ᴌHigh Capacitance Ratio : C1V/C5V=5.0 Min.
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KDV1472
F15030
c5v diode
KDV1472
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C10V
Abstract: KDV239E
Text: SEMICONDUCTOR TECHNICAL DATA KDV239E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF RADIO. FEATURES 1 A ᴌSmall Package. ESC Package E C B CATHODE MARK ᴌUltra Low Series Resistance : rS=0.44ή(Typ.) 2 MAXIMUM RATING (Ta=25ᴱ)
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KDV239E
100MHz
C10V
KDV239E
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c5v diode
Abstract: KDV1471
Text: KDV1471 SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES ᴌHigh Capacitance Ratio : C1V/C5V=5.0 Min. E B L L ᴌExcellent C-V Characteristics. 2 3 G H A ᴌSmall Package. D
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KDV1471
c5v diode
KDV1471
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KDV350E
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KDV350E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. FEATURES 1 A ᴌSmall Package. ESC Package E C B CATHODE MARK ᴌLow Series Resistance : rS=0.50ή(Max.) 2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC D F SYMBOL
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KDV350E
470MHz
KDV350E
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alternator diode
Abstract: a3 6 zener B2 Zener E35A23VR E35A23VS
Text: SEMICONDUCTOR E35A23VS, E35A23VR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 FEATURES A1 D3 B1 B2 D2 ᴌZener Voltage : 23V Typ. D1 ᴌAverage Forward Current : IO=35A. POLARITY C1 E MAXIMUM RATING (Ta=25ᴱ)
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E35A23VS,
E35A23VR
100mS
100mA,
100mA
alternator diode
a3 6 zener
B2 Zener
E35A23VR
E35A23VS
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KDV257E
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KDV257E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC A 1 2 SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150
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KDV257E
470MHz
KDV257E
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