Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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Untitled
Abstract: No abstract text available
Text: 3.4mm SURFACE MOUNT LED W1387QMP/EGW HIGH EFFICIENCY RED GREEN Features Description zI.C. COMPATIBLE. The High Efficiency Red source color devices are zWIDE VIEWING ANGLE. Phosphide Orange Light Emitting Diode. zPACKAGE: 1000PCS / REEL. Phosphide Green Light Emitting Diode.
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W1387QMP/EGW
1000PCS
DSAD1352
MAR/01/2005
W1387QMP/EGW
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Untitled
Abstract: No abstract text available
Text: SMD Switching Diode CDSSC4148N-G Voltage: 75 V Current: 150mA RoHS Device 0805 Features 0.087 2.20 0.071(1.80) -Designed for mounting on small surface. -Silicon Epitaxial Planar Diode. 0.057(1.45) 0.041(1.05) -Fast switching diode. -Lead free 0.037(0.95)
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CDSSC4148N-G
150mA
QW-B0049
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MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
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Untitled
Abstract: No abstract text available
Text: AOZ8211 0ne-line TVS Diode General Description Features The AOZ8211 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. This device incorporates one TVS diode in an ultra-small
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AOZ8211
AOZ8211
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AOZ8211NI-12L
Abstract: AOZ8211 AOZ8211NI-05L MARKING 05L
Text: AOZ8211 One-line TVS Diode General Description Features The AOZ8211 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ● This device incorporates one TVS diode in an ultra-small
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AOZ8211
AOZ8211
OD923
OD923
AOZ8211NI-12L
AOZ8211NI-05L
MARKING 05L
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Untitled
Abstract: No abstract text available
Text: AOZ8211 One-line TVS Diode General Description Features The AOZ8211 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ● This device incorporates one TVS diode in an ultra-small
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AOZ8211
AOZ8211
OD923
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Untitled
Abstract: No abstract text available
Text: SMD Switching Diode SMD Diodes Specialist CDSSC4148N-G Voltage: 75 V Current: 150mA RoHS Device 0805 Features 0.087 2.20 0.071(1.80) Designed for mounting on small surface. Silicon Epitaxial Planar Diode. 0.057(1.45) 0.041(1.05) Fast switching diode. Lead free
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CDSSC4148N-G
150mA
QW-B0049
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marking code W1
Abstract: MARKING CODE diode sod123 W1 diode sod123 W1 "MARKING CODE W1*" MARKING W1 w1 marking SOD 123 diode sod-123 marking code 26 diode marking w1 1N4448W
Text: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast Switching Diode PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W1 Top View Marking Code: "W1" Simplified outline SOD-123 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Reverse Voltage
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1N4448W
OD-123
OD-123
marking code W1
MARKING CODE diode sod123 W1
diode sod123 W1
"MARKING CODE W1*"
MARKING W1
w1 marking SOD 123
diode sod-123 marking code 26
diode marking w1
1N4448W
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CDSNC4148
Abstract: DIODE SMD 1206
Text: SMD Switching Diode SMD Diodes Specialist CDSNC4148 High Speed Features 1206 Designed for mounting on small surface. Silicon Epitaxial Planar Diode. 0.134 3.40 0.118(3.00) Fast switching diode. Use in sensitive electronics protection against voltage transients induced by inductive load
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CDSNC4148
NC/1206
QW-B0019
CDSNC4148
DIODE SMD 1206
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SOD523 land pattern
Abstract: alpha date code System MARK BE diode SOD523 general MARKING ESd SOD523 AOZ8221 AOZ8221NI-05L
Text: AOZ8221 One-line Bi-directional TVS Diode General Description Features The AOZ8221 is a one-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ● This device incorporates one TVS diode in an ultra-small
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AOZ8221
AOZ8221
OD523
OD523
SOD523 land pattern
alpha date code System
MARK BE diode SOD523 general
MARKING ESd SOD523
AOZ8221NI-05L
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AOZ8231NI-05L
Abstract: AOZ8231 alpha date code System sod923
Text: AOZ8231 One-line Bi-directional TVS Diode General Description Features The AOZ8231 is a one-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ● This device incorporates one TVS diode in an ultra-small
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AOZ8231
AOZ8231
OD923
OD923
AOZ8231NI-05L
alpha date code System
sod923
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aoz8231
Abstract: AOZ8221 AOZ8221NI-05L SOD523 land pattern MARKING CODE AOZ AOS date code System
Text: AOZ8221 One-line Bi-directional TVS Diode General Description Features The AOZ8221 is a one-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ● This device incorporates one TVS diode in an ultra-small
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AOZ8221
AOZ8221
OD523
OD523
aoz8231
AOZ8221NI-05L
SOD523 land pattern
MARKING CODE AOZ
AOS date code System
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Untitled
Abstract: No abstract text available
Text: SMD Zener Diode CZRSC55C2V0-G Thru CZRSC55C36-G Voltage: 2.0 to 36 Volts Power: 0.5 Watts RoHS Device Features 0805 - This diode is also available in other case styles including the 1206 case with the type designation. - Sillcon Planar Power Zener Diode. 0.086 2.20
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CZRSC55C2V0-G
CZRSC55C36-G
QW-BZ023
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Untitled
Abstract: No abstract text available
Text: UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 DUAL SCHOTTKY DIODE BRIDGE FEATURES D Monolithic Eight-Diode Array D Exceptional Efficiency D Low Forward Voltage D Fast Recovery Time D High Peak Current D Small Size DESCRIPTION This eight-diode array is designed for
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UC1610
UC3610
SLUS339B
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semiconductor
Abstract: hirect H507CH Hirect diode H400TB
Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5
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Untitled
Abstract: No abstract text available
Text: UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 DUAL SCHOTTKY DIODE BRIDGE FEATURES D Monolithic Eight-Diode Array D Exceptional Efficiency D Low Forward Voltage D Fast Recovery Time D High Peak Current D Small Size DESCRIPTION This eight-diode array is designed for
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UC1610
UC3610
SLUS339B
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PIN Diode Basics
Abstract: PIN DIODE DRIVER CIRCUITS 2n2222 transistor pin b c e 2N2894A 2N2222 application note 2n2222 transistor datasheet depletion mode current limiter LATTICE 3000 SERIES Microwave PIN diode Switching diode 0.5
Text: APPLICATION NOTE PIN Diode Basics Introduction Basic Theory—Variable Resistance A PIN diode is essentially a variable resistor. To determine the value of this resistance, consider a volume comparable to a typical PIN diode chip, say 20 mil diameter and 2 mils thick. This chip has a
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UC1610
Abstract: UC1610DW UC1610J UC2610 UC2610DW UC2610J UC3610 UC3610DW UC3610J
Text: UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 DUAL SCHOTTKY DIODE BRIDGE FEATURES D Monolithic Eight-Diode Array D Exceptional Efficiency D Low Forward Voltage D Fast Recovery Time D High Peak Current D Small Size DESCRIPTION This eight-diode array is designed for
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UC1610
UC3610
SLUS339B
UC1610
UC1610DW
UC1610J
UC2610
UC2610DW
UC2610J
UC3610
UC3610DW
UC3610J
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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25-12io8
Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-Module d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z5-Z3 Phase control Thyristor-Diode-Modules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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K21-0120
K21-01S0
K21-0180
K21-0265
K41-0150C
25-12io8
MDC 1200
DIODE mdc 40-14
MCO 1510
MCd 25-04
ABB thyristor modules
ASEA thyristor
mdc 55-04
hs 50 abb
E72873
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Thyristor MCD
Abstract: mdc 90-12 ABB thyristor modules 90-08io8 DIODE REDRESSEMENT mcd 132
Text: A S E A BROüJN/ABB ~fl3 FI Dcmfl30ó QQoans E F SEMICON • Netz-Thyristor-Diode-Module _ _ 1 T— 25-23 S 3 f£ v ~ : B ES Phase control Thyristor-Diode-Modules Daten pro Diode Oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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K21-0120
K21-0180
K41-0150
K41-0150
Thyristor MCD
mdc 90-12
ABB thyristor modules
90-08io8
DIODE REDRESSEMENT
mcd 132
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Untitled
Abstract: No abstract text available
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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laser diode Spectral Width 1 nm, 1550 nm, power 2
Abstract: No abstract text available
Text: DATA SH E E T LASER DIODE NDL7553P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7553P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode fiber.
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NDL7553P
1550nm
NDL7553P1
bMS752S
L427525
laser diode Spectral Width 1 nm, 1550 nm, power 2
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