Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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marking dp sot363
Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
marking dp sot363
BC237
transistor BF245 A
marking A5 sot363
2N2222A plastic
bc849
bf245 equivalent
marking code a5 sot363
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2N301
Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2N301
BC237
5111 sot-23
BC547 sot package sot-23
2N5670 equivalent
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BC237
Abstract: sot23 transistor marking JY
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV199LT1 This switching diode has the following features: • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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BAV199LT1
BAV199LT3
inch/10
BAV199LT1
236AB)
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
sot23 transistor marking JY
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BC237
Abstract: 2N2904 bf245b equivalent SOT23 Marking JX
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAV170LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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BAV170LT1
BAV170LT3
inch/10
BAV170LT1
236AB)
t218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
2N2904
bf245b equivalent
SOT23 Marking JX
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BC237
Abstract: TRANSISTOR bc177b
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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BAW156LT1
BAW156LT3
inch/10
BAW156LT1
236AB)
Junc218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
TRANSISTOR bc177b
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BC237
Abstract: marking code N9 8-pin
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode DAN222 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90
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416/SC
DAN222
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
marking code N9 8-pin
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BC237
Abstract: 2n2222a SOT223 5161 common anode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for
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OT-223
MV7005T1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
2n2222a SOT223
5161 common anode
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BC237
Abstract: DUAL GENERAL PURPOSE TRANSISTORS marking code D3 SOT23 component marking code mt
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package
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M1MA141/2WKT1
inch/3000
M1MA141/2WKT3
inch/10
M1MA141WKT1
M1MA142WKT1
70/SOT
M1218A
MSC1621T1
BC237
DUAL GENERAL PURPOSE TRANSISTORS marking code D3
SOT23 component marking code mt
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MV104 "direct replacement"
Abstract: 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning.
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MV104)
MV104
226AA)
Curren218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV104 "direct replacement"
2N3819 Application Note
BF245 application note
K 2056 transistor
MV104 equivalent
BC237
BSS89 APPLICATION
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Cathode BAV70LT1 Motorola Preferred Device ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge)
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BAV70LT1
236AB)
Uni218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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diode l 0607
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
M1MA141KT1
M1MA142KT1
70/SOT
M1MA142KT1
MSC1621T1
diode l 0607
BC237
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BC237
Abstract: 16 pin dip with heat sink
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which
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M1MA141/2WAT1
inch/3000
M1MA141/2WAT3
inch/10
M1MA141WAT1
M1MA142WAT1
70/SOT
M1MA142WAT218A
MSC1621T1
BC237
16 pin dip with heat sink
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BC237
Abstract: bc547 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode MMBD7000LT1 Motorola Preferred Device 1 ANODE 3 CATHODE/ANODE 2 CATHODE 3 1 2 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM(surge)
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MMBD7000LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
bc547 equivalent
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MR2835SK
Abstract: No abstract text available
Text: MR2835SK Overvoltage Transient Suppressor …designed for applications requiring a diode with reverse avalanche characteristics for use as reverse power transient suppressor. Developed to suppress transients in the automotive system, this device operates in reverse mode as power zener diode and will protect
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MR2835SK
MR2835S
MR2835SK/D
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MR2835S
Abstract: MR2835S equivalent MR2835SK load dump pulse load dump test
Text: MR2835S, MR2835SK Overvoltage Transient Suppressor …designed for applications requiring a diode with reverse avalanche characteristics for use as reverse power transient suppressor. Developed to suppress transients in the automotive system, this device operates in reverse mode as power zener diode and will protect
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MR2835S,
MR2835SK
MR2835S
MR2835S/D
MR2835S
MR2835S equivalent
MR2835SK
load dump pulse
load dump test
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BC237
Abstract: diode H5
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode MMSD914T1 The switching diode has the following features: Motorola Preferred Device • SOD–123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time 1 Cathode 2 2 Anode 1 CASE 425–04, STYLE 1
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MMSD914T1
Ambient218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
diode H5
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BC237
Abstract: SOT-223 number code book FREE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7404T1 Silicon Hyper-Abrupt Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for high capacitance and a tuning ratio of greater than 10 times over a bias range of 2.0 to 10 volts. It provides tuning over a
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OT-223
solder218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
SOT-223 number code book FREE
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BC237
Abstract: msc2295 MPS2369 equivalent BC547 sot package sot-23 MMBD1000
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
msc2295
MPS2369 equivalent
BC547 sot package sot-23
MMBD1000
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BC237
Abstract: BC547
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS116LT1 Switching Diode This switching diode has the following features: Motorola Preferred Device • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel
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BAS116LT1
BAS116LT3
inch/10
BAS116LT1
236AB)
Total218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
BC547
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transistor 5BM
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode MMBD6100LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 2 CASE 318 – 08, STYLE 9 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current
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MMBD6100LT1
236AB)
DEVICE218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
transistor 5BM
BC237
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