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    DIODE ZENER T 27A Search Results

    DIODE ZENER T 27A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE ZENER T 27A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    high voltage regulator

    Abstract: CN5281B
    Text: CN5281B SILICON ZENER DIODE 500mW, 200 VOLTS 5% TOLERANCE nt Ce w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CN5281B Zener Diode is a high voltage regulator for use in industrial and commercial applications. MARKING: FULL PART NUMBER


    Original     		PDF CN5281B 500mW, DO-41S 200mA 27-April high voltage regulator

    STW28NK60Z

    Abstract: W28NK60Z
    Text: STW28NK60Z N-CHANNEL 600 V - 0.155Ω - 27A TO-247 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID PW STW28NK60Z 600 V < 0.185 Ω 27 A 350 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.155 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STW28NK60Z O-247 STW28NK60Z W28NK60Z

    W28NK60Z

    Abstract: STW28NK60Z
    Text: STW28NK60Z N-CHANNEL 600 V - 0.155Ω - 27A TO-247 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID PW STW28NK60Z 600 V < 0.185 Ω 27 A 350 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.155 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STW28NK60Z O-247 W28NK60Z STW28NK60Z

    5a6 zener diode

    Abstract: SMD MARKING CODE 5a6 5a6 dual zener diode Bidirectional Zener Diode Glass 15v 6A8 SMD 6A8 DIODE SMD zener 5A6 ON ir 5a6 diode 5A6 smd sot23 5A6 t smd
    Text: Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS List List. 1 Package outline. 2


    Original     		PDF MMBZ33VA MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. 5a6 zener diode SMD MARKING CODE 5a6 5a6 dual zener diode Bidirectional Zener Diode Glass 15v 6A8 SMD 6A8 DIODE SMD zener 5A6 ON ir 5a6 diode 5A6 smd sot23 5A6 t smd

    SMD MARKING CODE 5a6

    Abstract: SMD 5A6 SOT-23 6A8 SMD ir 5a6 diode Zener diode smd marking code 12A 5A6 smd sot23 PK SMD mARKING marking 6a2 smd
    Text: Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS List List. 1 Package outline. 2


    Original     		PDF MMBZ33VA 125oC MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 METHOD-1038 SMD MARKING CODE 5a6 SMD 5A6 SOT-23 6A8 SMD ir 5a6 diode Zener diode smd marking code 12A 5A6 smd sot23 PK SMD mARKING marking 6a2 smd

    zener smd marking M1 sod-123

    Abstract: WT 7525 Zener diode smd marking code 39c smd diode z67 v9 TRANSISTOR SMD MARKING CODE t05 ZENER DIODE 6.2V bzx 85 c diode ZENER y8 sot23 zener BZX 55c 4v7 sod80 smd zener diode color band TRANSISTOR SMD MARKING CODE 3401
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book zener diodes and esd protection components vishay semiconductors vHN-db1103-0406 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vHN-db1103-0406 zener smd marking M1 sod-123 WT 7525 Zener diode smd marking code 39c smd diode z67 v9 TRANSISTOR SMD MARKING CODE t05 ZENER DIODE 6.2V bzx 85 c diode ZENER y8 sot23 zener BZX 55c 4v7 sod80 smd zener diode color band TRANSISTOR SMD MARKING CODE 3401

    GE Transient Voltage Suppression Manual

    Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
    Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF DL150/D May-2001 no422-3781 r14525 DL150/D GE Transient Voltage Suppression Manual diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code

    orient 817b

    Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
    Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF DL150/D May-2001 r14525 DLD601 orient 817b UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b

    UJT-2N2646 PIN DIAGRAM DETAILS

    Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
    Text: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets


    Original     		PDF

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    12n60b3d

    Abstract: HGTP12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D TA49188 TB334
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. HGT1S12N60B3DS 12n60b3d HGTP12N60B3D HGT1S12N60B3DS9A HGTG12N60B3D TA49188 TB334

    12n60b3d

    Abstract: HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. 12n60b3d HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334

    27a zener diode

    Abstract: diode zener t 27a Hitachi DSA00776 ADE 352 HZM27WA SC-59A
    Text: ADE-208-352 Z HZM27WA Silicon Epitaxial Planar Zener Diode for Surge Absorb Rev. 0 May.1995 Features Outline • HZM27WA has two devices, and can absorb external + and −surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF ADE-208-352 HZM27WA HZM27WA SC-59A 27a zener diode diode zener t 27a Hitachi DSA00776 ADE 352 SC-59A

    22-IB

    Abstract: 33A zener diode 27a zener diode 33a zener
    Text: Diodes 1 W Zener Diode PTZ Series l l External dimensions Units: mm Application.s l)Voltage regulatton and voltage limiting 2)Voltage surge absorption l Features 1 )Deslgned for mounting on small surface areas (PMDS) 2) 1 W of power can be obtained despite compact size


    Original     		PDF 500bv PTZ27-PTZ36 2-PTZ18 22-IB 33A zener diode 27a zener diode 33a zener

    Diode Marking ZM Motorola

    Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
    Text: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:


    OCR Scan     		PDF 1SMB5913A/D 1SMB5913A, 1SMB5956A, 1SMB5913A 241Sb C6459& Diode Marking ZM Motorola DIODE MOTOROLA 39A ZENER 18-2 5t

    Zener diode 18A

    Abstract: ZENER 18A 27a zener diode diode zener t 27a
    Text: SILICON DIFFUSED TYPE ZENER DIODE 2Z16A/18A/27A Unit in m m TRANSIENT SUPPRESSOR FEATURES : . Peak Reverse • Power Dissipation P R S M = 6 0 0 W / l m s e c expo. . Zener Voltage : V ^ = 1 6 — 27V . Plastic Mold Package MAXIMUM RATINGS CHARACTERISTIC SYMBOL


    OCR Scan     		PDF 2Z16A/18A/27A 2Z16A 2Z27A Zener diode 18A ZENER 18A 27a zener diode diode zener t 27a

    12n60b3d

    Abstract: 12N60B3 Zener Diode LT 432 12N60 TA49188 HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TB334
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS in t e r r ii J a n u a ry . Data Sheet 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar


    OCR Scan     		PDF 12N60B3D, HGT1S12N60B3DS TA49171. TA49188. 12n60b3d 12N60B3 Zener Diode LT 432 12N60 TA49188 HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TB334

    Untitled

    Abstract: No abstract text available
    Text: ALA501 High-Voltage, Sem icustom Linear/D igital Array Description The ALA501 High-Voltage, Semicustom Linear/Digital Array is a versatile, smart-power IC consisting of user-configurable, high-voltage, linear devices and CMOS logic. Users can design their own proprietary


    OCR Scan     		PDF ALA501 breakdow-7495, DS90-081HVIC DS89-116LBC)

    G12N60b3

    Abstract: G12N60B HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ
    Text: in t e HGTP12N60B3, HGT1S12N60B3S r r ii J a n u a ry . m Data Sheet 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    OCR Scan     		PDF HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S TA49171ration G12N60b3 G12N60B HGT1S12N60B3S9A HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ

    1S1618

    Abstract: IN987B do-7 diode iss IN987 IN9778 ic 957B SJ 76 A DIODE EMI
    Text: niCROSEMI CORP 25E D bllSäbS QGOQTbfl fl 1N957B thru 1N992B DO-7 emi Corp. Th§'0KX/^9M0trtS SCOTTSDALE, AZ SANTA ANA, CA For more information calk 602 941-6300 FEATURES T - t h t f SILICON 400 mW ZENER DIODES • 6.8 TO 200V ZENER VOLTAGE RANGE • 1N962B THRU 1N992B HAVE JAN, JANTX AND JANTXV QUALIFICATIONS


    OCR Scan     		PDF 1N957B 1N992B 1N962B MIL-S-195Q0/117 1N973B 1NJ57Í 1N93I« 1N9S08 1H961B 1S1618 IN987B do-7 diode iss IN987 IN9778 ic 957B SJ 76 A DIODE EMI

    1N821-1N829

    Abstract: 250ca 1N SERIES DIODE zener diode 1n 1NS21 zener 7.5 B 48 Zener Diodes series 1N
    Text: AM ER I C A N PO WE R D E V I C E S S'JE » • 07373.3S O O O D G S b 777 * A P » T V / - 1N821-1N829 1N821A-1N829A americani S E M IC O N D U C T O R S power devices, inc. 500 mW temperature compensated zener reference diodes MECHANICAL CHARACTERISTICS


    OCR Scan     		PDF 1N821-1N829 1N821A-1N829A 500mW 1NS21 1N821A 250ca 1N SERIES DIODE zener diode 1n zener 7.5 B 48 Zener Diodes series 1N

    Untitled

    Abstract: No abstract text available
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS uADQie rw o S E M I C rtru O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Description Features This fam ily of MOS gated high voltage switching devices


    OCR Scan     		PDF HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS TA49171. TA49188. 1-800-4-HARRIS

    Zener 21V

    Abstract: zener diode 182 27a zener diode diode zener t 27a
    Text: HZM27WA-Silicon Epitaxial Planar Zener Diode for Surge Absorb Features Outline s • HZM27WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly. g -3


    OCR Scan     		PDF HZM27WA------------------Silicon HZM27WA HZM27WA 150pF, Zener 21V zener diode 182 27a zener diode diode zener t 27a

    diode zener t 27a

    Abstract: Zener 21V 27a zener diode
    Text: ADE-208-352 Z HZM27WA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI Rev. 0 May. 1995 Outline Features • HZM27WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		PDF HZM27WA ADE-208-352 HZM27WA SC-59A diode zener t 27a Zener 21V 27a zener diode