zener diode zg
Abstract: ZG zener E35A21VBR E35A21VBS
Text: SEMICONDUCTOR E35A21VBS, E35A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=35A. ・Zener Voltage : 21V Typ. POLARITY E35A21VBS (+ Type) : Mark : ZG E35A21VBR (- Type) : Mark : ZA
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E35A21VBS,
E35A21VBR
E35A21VBS
100mA,
100mS
zener diode zg
ZG zener
E35A21VBR
E35A21VBS
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semikron thyristor
Abstract: No abstract text available
Text: SKT Tabl. 15,2 Qu ZG bond. power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter Absolute Maximum Ratings Symbol Conditions Values Units +, +,( ! 0( $%& 1 ! +2( $% +3# * 1 ! +2( $%& +( &
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Untitled
Abstract: No abstract text available
Text: SKT Tabl. 15,2 Qu ZG bond.SEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions Values Units +, +,( ! 0( $%& 1 ! +2( $% +3# * 1 ! +2( $%& +( & 2"( * 1 ! +2( $%& +( &
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Untitled
Abstract: No abstract text available
Text: SKT 15,2 Qu ZG bond.SEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions Values Units +, +,( ! 0( $%& 1 ! +2( $% +3# * 1 ! +2( $%& +( & 2"( * 1 ! +2( $%& +( &
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Untitled
Abstract: No abstract text available
Text: SKT Tabl. 15,2 Qu ZG bond.SEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions Values Units +, +,( ! 0( $%& 1 ! +2( $% +3# * 1 ! +2( $%& +( & 2"( * 1 ! +2( $%& +( &
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skt 450
Abstract: semikron thyristor skt 16 diode skn 5/ 08 semikron Semikron SKN 12 /16 diode zg 21 SKR TABL 3,5 QU Semikron SKR 40 /12 TABL14 SKT-GSW semikron skt 600
Text: Section 15: SEMICELL Power Semiconductor Chips The following tables contain our standard types. Other types or selections are available on special request. Please contact your SEMIKRON office. SEMICELL® Rectifier Diode Chips Types 3 VRRM 100 4) SKN SKR
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D-68623
Abstract: HTZ260G14K HTZ260G16K HTZ260G19K HTZ260G22K
Text: HTZ260G Series High Voltage Diode Rectifier Module IF AV = 4.7 A VRRM = 22400 V Type Number Repetitive Peak Minimum Avalanche Voltage V(BR)R HTZ260G22K HTZ260G19K HTZ260G16K HTZ260G14K 22400 19600 16800 14000 23800 21000 18200 15400 CIRCUIT DIAGRAM LARONTROL
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HTZ260G
HTZ260G22K
HTZ260G19K
HTZ260G16K
HTZ260G14K
D-68623
HTZ260G14K
HTZ260G16K
HTZ260G19K
HTZ260G22K
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diode zg 36
Abstract: PTM V0 730 7-1415036-1 diode 366 nm diode red led a2 DIODE PT78704 varistor 741 tag 741 800 MINIATURE RELAY 110 VDC
Text: Accessories Miniature Relay PT and similar design: relay heights 29 / 34.6 / 35.2 / 36.6 / 37.6mm Features • • • • Easy replacement of relays on a densely packed DIN rail High quality rising clamp terminals Captive combination terminal screws No reduction of protection class or creepage/clearance
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F0233-A
F0134-A
diode zg 36
PTM V0 730
7-1415036-1
diode 366 nm
diode red led
a2 DIODE
PT78704
varistor 741
tag 741 800
MINIATURE RELAY 110 VDC
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diode zg 36
Abstract: PTM V0 730 relay miniature 110 vdc S0320 tag 741 800 MINIATURE RELAY 110 VDC PT78704 A2 DIODE varistor 741 1N4007
Text: Accessories Miniature Relay PT and similar design: relay heights 29 / 34.6 / 35.2 / 36.6 / 37.6mm Features • · · · Easy replacement of relays on a densely packed DIN rail High quality rising clamp terminals Captive combination terminal screws No reduction of protection class or creepage/clearance
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F0233-A
F0234-A
F0134-A
diode zg 36
PTM V0 730
relay miniature 110 vdc
S0320
tag 741 800
MINIATURE RELAY 110 VDC
PT78704
A2 DIODE
varistor 741
1N4007
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Relais ITT
Abstract: SDS Relais Rapa Relais feme relais Relais gruner 9059 Zettler relais az 421 Relais gruner 9066 ZG450024 haller relais sds relais rs-24 v
Text: Produktübersicht Relaiskoppler / Relaissockel Relaiskoppler mit 1 Schließer oder 1 Öffner Relaiskoppler mit 2,8 mm Flachsteckanschluß Seite 6-5/4 Relaiskoppler 1 Öffner / 1 Schließer Seite 6-5/5 Relaiskoppler mit 2 x 1 Wechsler oder 3 x 1 Schließer
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11polig
35x15
Relais ITT
SDS Relais
Rapa Relais
feme relais
Relais gruner 9059
Zettler relais az 421
Relais gruner 9066
ZG450024
haller relais
sds relais rs-24 v
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RD02MUS2
Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
Text: MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15
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RD02MUS2
175MHz
520MHz
RD02MUS2
rd02mus
TC 4863 DB
T112
D 1652 transistor
MOSFET RF POWER TRANSISTOR VHF
transistor 0882
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diode gp 434
Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
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RD07MVS2
175MHz
520MHz
RD07MVS2-101
diode gp 434
RD07MVS1
RD07MVS2
T112
07MVS1
PO520
zener gp 434
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em18
Abstract: schrack zg relay DATASHEET EM18 diode zg 36 EM01 PCB 4-pole 3.5mm Socket G-722
Text: General Purpose Relays Accessories Miniature Relay PT • Easy replacement of relays on a densely packed DIN rail ■ Socket with logical arrangement of control/load terminals ■ High quality rising clamp terminals ■ Captive combination terminal screws
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2002/95/EC)
F0263-B
F0264-A
S0489-AAE
em18
schrack zg relay
DATASHEET EM18
diode zg 36
EM01
PCB 4-pole 3.5mm Socket
G-722
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Varistor, 6-24Vdc
Abstract: A2 DIODE diode A2 9 datasheet for 10A 120VAC relay VARISTOR 440VAC relay 5vDC 2 C/O PTM V0 730 transistor zg ac relay diode A2 12
Text: General Purpose Relay PT series PT Faston 2 pole 15A, DC or AC Coil 2 C/O contacts 15A Rated Current Relay Height 29mm Cadmium-free contact material Mechanical Indicator Universal use in control and automation. Mounting options include socket, PCB, and top flange
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E58304,
6-60Vac
110-230Vac
24Vac
230Vac
6-24Vdc/Vac
6-24Vdc,
Varistor, 6-24Vdc
A2 DIODE
diode A2 9
datasheet for 10A 120VAC relay
VARISTOR 440VAC
relay 5vDC 2 C/O
PTM V0 730
transistor zg
ac relay
diode A2 12
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xaar
Abstract: No abstract text available
Text: SK150GD066T =' S BR TIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PI:9 =U S BR TI <I =U S @YR TI <IZ; SEMITOP 4 IGBT Module .5'( WXX P @R@ J =' S YX TI @B@ J CXX J [ BX P =U S @BR TI W _' =' S BR TI @`a J =' S YX TI @RB J BXX
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SK150GD066T
b9-00&
xaar
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schrack zg relay
Abstract: PCB 4-pole 3.5mm Socket em18 EM01 PT78730 diode zg 36 s0427b
Text: General Purpose Relays Accessories Miniature Relay PT Q Easy replacement of relays on a densely packed DIN rail Q Socket with logical arrangement of control/load terminals Q High quality rising clamp terminals Q Captive combination terminal screws Q No reduction of protection class or creepage/clearance with
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F0263-B
F0264-A
S0489-AAE
schrack zg relay
PCB 4-pole 3.5mm Socket
em18
EM01
PT78730
diode zg 36
s0427b
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RD02MUS2
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 0.2+/-0.05 (0.22) RD02MUS2 is a MOS FET type transistor 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 specifically designed for VHF/UHF RF power
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RD02MUS2
175MHz
520MHz
RD02MUS2
175MHz,
520MHz
175MHz)
520MHz)
Oct2011
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 0.2+/-0.05 (0.22) RD02MUS2 is a MOS FET type transistor 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 specifically designed for VHF/UHF RF power
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RD02MUS2
175MHz
520MHz
RD02MUS2
175MHz,
520MHz
175MHz)
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)
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RD07MVS2
175MHz
520MHz
RD07MVS2
520MHz
175MHz)
520MHz)
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3M Touch Systems
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05
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RD07MVS2
175MHz
520MHz
RD07MVS2
175MHz)
520MHz)
3M Touch Systems
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ZENER B02
Abstract: ZGP10-200 zgp10 160b ZGP10-100 ZGP10-110 ZGP10-120 ZGP10-130
Text: 3ÔE D 6ENL INSTR/ POWER • 30^0137 GOQMMM? 1 « G I C T-fl-AT ZG P 10-100 T H R U 10-200 ZG P MINIATURE GLASS PASSIVATED JUNCTION PLASTIC ZENER REGULATOR DIODE Voltage -100 to 200 Volts Power Rating -1. 5 Watts FEATURES ♦ High temperature metallurgically bonded con
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ZGP1Q-100
ZGP10-200
DO-41
DO-41
MIL-S-19500
ZENER B02
ZGP10-200
zgp10 160b
ZGP10-100
ZGP10-110
ZGP10-120
ZGP10-130
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zener diode zg
Abstract: 3808A diode zener zg 22 3809B zener diode 493 diode DO214 zener diode chip SMZG3791A
Text: ^ ^ SMZG AND SMZJ 3789 THRU 3809B ^ SURFACE MOUNT ZENER DIODE Zener Voltage-10 to 68 Volts Steady State Power - 1.5 Watts DO-214AA MODIFIED J-BEND DO-215AA D im e n s io n s in in c h e s a n d m illim e te rs l FEATURES MECHANICAL DATA ♦ Plastic package has Underwriters Laboratory Flammability
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DO-214AA
3809B
DO-215AA
DO-214/D0215AA
STD-750,
J3789
J3809B
zener diode zg
3808A
diode zener zg 22
3809B
zener diode 493
diode DO214
zener diode chip
SMZG3791A
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diode SKN molybdenum
Abstract: No abstract text available
Text: s e m ik r d n Section 15: SEMICELL Power Semiconductor Chips The following tables contain our standard types. Other types or selections are available on special request. Please contact your SEMIKRON office. SEMICELL® Rectifier Diode Chips , T^ es $ Y s k n 3
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GMCL03
GMCL04
CD47E405
GMCL06
fll3bb71
diode SKN molybdenum
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093.266
Abstract: pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502
Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Prelim inary data • For high power amplifiers • Compression point P_1dB = 26.5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency ^ > 1 7 GHz • Gold metalization for high reliability
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Q62702-F1721
SCT-595
200mA
093.266
pin diagram of bf 494 transistor
b 595 transistor schematic
PA 1515 transistor
transistor BF 502
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