VPS05605
Abstract: BF 212 transistor TS1440
Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 For low current applications 4 For oscillators up to 12 GHz Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability
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VPS05605
OT-343
-j100
Dec-13-1999
VPS05605
BF 212 transistor
TS1440
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Infineon Technologies transistor 4 ghz
Abstract: No abstract text available
Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 For low current applications For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding Gms = 23 dB at 1.8 GHz Transition frequency fT = 25 GHz Gold metallization for high reliability
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VPS05605
OT-343
-j100
Nov-17-2000
Infineon Technologies transistor 4 ghz
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siemens rs 1003
Abstract: TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440
Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 • For low current applications 4 • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability
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VPS05605
Q62702-F1592
OT-343
-j100
Sep-09-1998
siemens rs 1003
TRANSISTOR BI 187
Q62702-F1592
VPS05605
TS1440
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a06 transistor
Abstract: TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405
Text: SIEGET 25 BFP405 NPN Silicon RF Transistor Low Current Applications l For Oscillators up to 12 GHz l For Noise Figure F = 1.15 dB at 1.8 GHz l Outstanding G = 22 dB at 1.8 GHz Transition Frequency f = 25 GHz l Gold metalization for high reliability l SIEGET 25-Line
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BFP405
1512dB
25-Line
OT343
Q62702-F-1592
a06 transistor
TRANSISTOR A06
Code "A06" RF Semiconductor
marking AAAA
marking A06
BF 184 transistor
BFP405
a06 transistor 165
chip diode 047
SIEMENS BFP405
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Untitled
Abstract: No abstract text available
Text: TSH511 Hi-fi stereo/mono infrared receiver and stereo sub-carrier demodulator Features • Supply voltage: 2.3V to 5.5V ■ Carriers frequency range: 0.4MHz to 11MHz ■ Two FM receivers for stereo ■ Integrated audio buffers ■ Audio outputs: 20mW into 16 ohms
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TSH511
11MHz
TQFP44
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audio limiter schematics
Abstract: FM audio transmitter 2.3MHz 2.8MHz 3 mm ir receiver audio squelch circuit 70mVrms hifi power amp schematic schematics for a PA amplifier RX-2 -G 1 Mhz fm demodulator
Text: TSH511 Hi-fi stereo/mono infrared receiver and stereo sub-carrier demodulator Features • Supply voltage: 2.3V to 5.5V ■ Carriers frequency range: 0.4MHz to 11MHz ■ Two FM receivers for stereo ■ Integrated audio buffers ■ Audio outputs: 20mW into 16 ohms
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TSH511
11MHz
TQFP44
audio limiter schematics
FM audio transmitter
2.3MHz 2.8MHz
3 mm ir receiver
audio squelch circuit
70mVrms
hifi power amp schematic
schematics for a PA amplifier
RX-2 -G
1 Mhz fm demodulator
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2.3MHz 2.8MHz
Abstract: hifi power amp schematic JESD97 TQFP44 TSH511 TSH511C TSH511CF TSH511CFT TSH512 2.3MHz 2.8MHz receiver
Text: TSH511 Hi-fi stereo/mono infrared receiver and stereo sub-carrier demodulator Features • Supply voltage: 2.3V to 5.5V ■ Carriers frequency range: 0.4MHz to 11MHz ■ Two FM receivers for stereo ■ Integrated audio buffers ■ Audio outputs: 20mW into 16 ohms
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TSH511
11MHz
TQFP44
2.3MHz 2.8MHz
hifi power amp schematic
JESD97
TQFP44
TSH511
TSH511C
TSH511CF
TSH511CFT
TSH512
2.3MHz 2.8MHz receiver
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transistor b 1238
Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1
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VPS05605
Q62702-F1794
OT-343
50Ohm
45GHz
-j100
Sep-09-1998
transistor b 1238
Q62702-F1794
transistor bf 520
transistor bfp 520
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HD74LV2G241A
Abstract: Hitachi DSA0015
Text: HD74LV2G241A Dual Bus Buffer Noninverted with 3–state Output ADE-205-350 Z 1st. Edition June 2000 Description The HD74LV2G241A has dual bus buffer noninverted with 3–state output in a 8 pin package. Two noninverters are included in one circuit. Each circuit can be independently controlled by the enable signal
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HD74LV2G241A
ADE-205-350
HD74LV2G241A
Operati2100
Hitachi DSA0015
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Hitachi DSA0076
Abstract: HD74LV240A HD74LV2G240A
Text: HD74LV2G240A Dual Bus Buffer Inverted with 3–state Output ADE-205-349 Z 1st. Edition May 2000 Description The HD74LV2G240A has dual bus buffer inverted with 3–state output in a 8 pin package. Two inverters are included in one circuit. Each circuit can be independently controlled by the enable signal 1OE or 2OE,
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HD74LV2G240A
ADE-205-349
HD74LV2G240A
HD74LV242100
Hitachi DSA0076
HD74LV240A
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ADE-205-354
Abstract: Hitachi DSA0076 HD74LV245A HD74LV2G245A
Text: HD74LV2G245A Dual Bus Transceivers with 3–state Outputs ADE-205-354 Z 1st. Edition May 2000 Description The HD74LV2G245A has two buffers with three state output in a 8 pin package. When DIR is high, data is transferred from the A inputs to the B outputs, and when DIR is low, data is transferred from the B inputs
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HD74LV2G245A
ADE-205-354
HD74LV2G245A
char2100
ADE-205-354
Hitachi DSA0076
HD74LV245A
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zener diode, zl 33
Abstract: diode zener ZL 20 diode zener ZL 8 diode zener ZL 27 1n5524 diode zener ZL 12
Text: 1N5518B thru 1N5546B-1 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV Low Voltage Avalanche 500 mW Zener Diodes DO-35 Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518 thru 1N5546 series of 0.5 watt axial-leaded glass Zener Voltage Regulators
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1N5518B
1N5546B-1
DO-35
MIL-PRF-19500/437
1N5518
1N5546
DO-35
T4-LDS-0037-1,
zener diode, zl 33
diode zener ZL 20
diode zener ZL 8
diode zener ZL 27
1n5524
diode zener ZL 12
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diode zener ZL 27
Abstract: diode zener ZL 15 zener diode, zl 33 diode zener ZL 8 1N5522B1 JANTXV diode zener ZL 30 diode zener ZL 10
Text: 1N5518B-1 thru 1N5546B-1 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV Low Voltage Avalanche 500 mW Zener Diodes DO-35 Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518-1 thru 1N5546-1 series of 0.5 watt axial-leaded glass Zener Voltage Regulators
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1N5518B-1
1N5546B-1
DO-35
MIL-PRF-19500/437
1N5518-1
1N5546-1
DO-35
T4-LDS-0037-1,
diode zener ZL 27
diode zener ZL 15
zener diode, zl 33
diode zener ZL 8
1N5522B1 JANTXV
diode zener ZL 30
diode zener ZL 10
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diode zl 82
Abstract: diode SMD MARKING CODE SAW diode zl 8.2 BCR22 smd marking VB SCT-598 smd marking gc smd marking GI 20 5 pin ZL smd diode
Text: GaAs MMIC CMY 800 Target Data Sheet • Bipolar RF amplifier and GaAs mixer with integrated IF-amplifier for mobile communication i.e. AMPS • typical overall performance (operation conditions 2.7 V, 8 mA; fRF = 881 MHz; fLO = 997 Mhz): Gain 22 dB (incl. 3 dB loss of SAW), Input P– 1 dB
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SCT-598
SCT-598
GPW09182
diode zl 82
diode SMD MARKING CODE SAW
diode zl 8.2
BCR22
smd marking VB
smd marking gc
smd marking GI 20 5 pin
ZL smd diode
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TFF3866
Abstract: rc 3866 TFF3866DP ZT1000 RHP 305 TFF3866N Megaxess frankfurt RX634
Text: Technical Data TFF3866N M EMegaxess G AGmbH X Deutschland ESS Edition 10/00 Subscriber Line Interface Circuit SLIC Short Description Features This circuit replaces the conventional transformer based analogue line interfaces in PABX and other telecommunications equipment with a modern
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TFF3866N
TFF3866
rc 3866
TFF3866DP
ZT1000
RHP 305
TFF3866N
Megaxess
frankfurt
RX634
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PDF
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TFF3866DP
Abstract: TFF3866 diode sg 01 Megaxess ZT1000 RSG20 frankfurt
Text: Technical Data TFF3866DP M EMegaxess G AGmbH X Deutschland ESS Edition 10/00 Subscriber Line Interface Circuit SLIC Short Description Features This circuit replaces the conventional transformer based analogue line interfaces in PABX and other telecommunications equipment with a modern
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TFF3866DP
TFF3866DP
TFF3866
diode sg 01
Megaxess
ZT1000
RSG20
frankfurt
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PDF
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TFF3866DP
Abstract: TFF3866 ZT1000 Megaxess frankfurt
Text: Technical Data TFF3866DP M EMegaxess G AGmbH X Deutschland ESS Edition 10/00 Subscriber Line Interface Circuit SLIC Short Description Features This circuit replaces the conventional transformer based analogue line interfaces in PABX and other telecommunications equipment with a modern
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TFF3866DP
TFF3866DP
TFF3866
ZT1000
Megaxess
frankfurt
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PDF
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RW300
Abstract: MV3010-1
Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS SL377 ADVANCE INFORMATION DS2098-2.2 SL377 SUBSCRIBER LINE INTERFACE CIRCUIT The SL377 is a Subscriber Line Interface Circuit SLIC for use at the telephone exchange or PABX end of a telephone
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SL377
DS2098-2
SL377
RW300
MV3010-1
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HD74LVCR2245A
Abstract: Hitachi DSA00395
Text: HD74LVCR2245A Octal Bidirectional Transceivers with 3–state Outputs ADE-205-235A Z Preliminary 2nd. Edition January 1999 Description The HD74LVCR2245A has eight buffers with three state outputs in a 20 pin package. When (T / R) is high, data flows from the A inputs to the B outputs, and when (T / R) is low, data flows from the B inputs
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HD74LVCR2245A
ADE-205-235A
HD74LVCR2245A
Hitachi DSA00395
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HD74LVCR2245A
Abstract: Hitachi DSA0015
Text: HD74LVCR2245A Octal Bidirectional Transceivers with 3–state Outputs ADE-205-235A Z Preliminary 2nd. Edition January 1999 Description The HD74LVCR2245A has eight buffers with three state outputs in a 20 pin package. When (T / R) is high, data flows from the A inputs to the B outputs, and when (T / R) is low, data flows from the B inputs to the A
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HD74LVCR2245A
ADE-205-235A
HD74LVCR2245A
Hitachi DSA0015
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AN82
Abstract: SL376 SL377
Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS SL377 ADVANCE INFORMATION DS2098-2.2 SL377 SUBSCRIBER LINE INTERFACE CIRCUIT The SL377 is a Subscriber Line Interface Circuit SLIC for use at the telephone exchange or PABX end of a telephone
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SL377
DS2098-2
SL377
AN82
SL376
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Siemens DIODE E 1240
Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
Text: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability
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BFP420
25-Line
Transistor25
Q62702-F1591
OT343
Siemens DIODE E 1240
AMS 3630
Code "A06" RF Semiconductor
SIEMENS BFP420
Transistor MJE 540
HA 12432
SOT343-3
BFP420 application notes
BFP420 A06
ff 0401 transistor
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diode BY239
Abstract: bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor LXE15450X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R amplifier. • Interdigitated common-emitter
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LXE15450X
MLC446
OT439A.
diode BY239
bd239 equivalent
Transistor Equivalent list
MLC446
copper permittivity
43081
BD239
BY239
LXE15450X
SC15
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ve32
Abstract: LSL4 SL4 diode
Text: DM10900 wvftàtâ-fffé.¡i.'* i f e i f ¥>•t. Test Temperature o°c Symbol -0.840 V|H max ViHAmln V|Lm ln Il V|LAm ax V ee - 1 .1 4 5 -1.95 -1.490 -5.2 I> —3 Recommended Operating Conditions + 2 5 °C + 7 0 °C -0.810 -1.105 -1.95 -1.475 -5.2 -0.730
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DM10900
68VDCto-5
72VDC
50Sto-2
ve32
LSL4
SL4 diode
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