transistor BC 245
Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
Text: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the
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2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM
Abstract: 8 pin IC 34063 44xx INA-10386 HP RF TRANSISTOR GUIDE ATF 26886 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM Rf detector HSMS 8202 ina series 305xx
Text: guide HP Wireless Communications Products, Markets Part-to-Market Quick Guide, Version 4.0 Table of Contents Abbreviations of Wireless Terms . i Receivers, Transmitters Receivers . 1
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5965-7732E
5968-2348E
2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM
8 pin IC 34063
44xx
INA-10386
HP RF TRANSISTOR GUIDE
ATF 26886
2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM
Rf detector HSMS 8202
ina series
305xx
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Untitled
Abstract: No abstract text available
Text: TQP0104 DC to 4 GHz, 30 W, Discrete PA Applications • • • • • • W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Final Stage Active Antenna General Purpose Applications 20 Pin 3x4mm QFN Product Features • • • •
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TQP0104
TQP0104
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microwave transistor siemens bfp 420
Abstract: RF Transistors smd transistor chart smd transistor NJ transistor R 405 doppler radar SMX-1 AG SMD TRANSISTOR Siemens transistors rf SIEMENS MICROWAVE RADIO 8 GHz
Text: APPLICATIONS DISCRETE SEMICONDUCTORS Kurt Brenndörfer ● Gerhard Lohninger ● Lothar Musiol ● Jakob Huber Fourth-generation bipolar RF transistors with 25 GHz transit frequency: SIEGET heads the pack Since the very beginning of RF transistor development,
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MRF553T
Abstract: MRF517
Text: MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB typ @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA • Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz
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MRF517
To-39
MRF545
MRF544
MRF553T
MRF517
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BF689
Abstract: BF689K transistor zs 35
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF689K NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BF689K PINNING NPN transistor in a plastic SOT54
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BF689K
MSB034
BF689
BF689K
transistor zs 35
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SCT598-Package
Abstract: stocko BGC420 BFP420 application notes 500R BFP420
Text: BGC 420 High Frequency Components A 1.85 GHz Low Noise Self-Biased Transistor Amplifier using BGC420 Features 8 • Gain=16dB / NF=1.65dB • Small SCT598-Package • Integrated Active Bias Circuit • Control Pin for Power-Down Mode • Current Easily Adjusted with an External Resistor
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BGC420
SCT598-Package
VPW05982
SCT598
BGC420
SCT598-Package
stocko
BFP420 application notes
500R
BFP420
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MRF586
Abstract: MRF517 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA
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MRF517
To-39
MRF571
BFR91
BFR90
MRF545
MRF544
MRF517
MRF586
low cost BFR90 transistor
2n2857 UHF transistor common base amplifier
2n5179
bfr90 equivalent
BFR91 transistor
BFR96
RF POWER TRANSISTOR NPN
MRF904
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transistor bfr96
Abstract: transistor BFR91 msc1302 2n2857 UHF transistor common base amplifier 2N4427 equivalent bfr91 2N5179 low cost BFR90 transistor RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR C 10-12 GHZ npn UHF transistor 2N5179
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA
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MRF517
To-39
MRF571
BFR91
BFR90
MRF545
MRF544
MSC1302
transistor bfr96
transistor BFR91
2n2857 UHF transistor common base amplifier
2N4427 equivalent bfr91
2N5179
low cost BFR90 transistor
RF POWER TRANSISTOR NPN vhf
RF NPN POWER TRANSISTOR C 10-12 GHZ
npn UHF transistor 2N5179
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MBG240
Abstract: BFS17 BFS17W
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 04 Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS
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BFS17W
OT323
BFS17W
BFS17.
MBC870
MBG240
BFS17
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npn UHF transistor 2N5179
Abstract: No abstract text available
Text: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters
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2N5179
npn UHF transistor 2N5179
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2N5179
Abstract: ic 741 datasheet pdf of 741 ic IC 741 MSC1305 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc
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2N5179
MSC1305
2N5179
ic 741 datasheet
pdf of 741 ic
IC 741
transistor 2N5179
datasheet of ic 741
ic 741 equivalent
uA 741 IC data sheet
npn UHF transistor 2N5179
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2N5179
Abstract: transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc
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2N5179
2N5179
transistor 2N5179
pdf of 741 ic
420 NPN Silicon RF Transistor
npn UHF transistor 2N5179
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MRF517
Abstract: VK200 mrf559 mrf559 vk200 nf c4 npn MRF5812 RF Transistor Selection 2N4427 2N5179 2N6255 MRF4427
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product @ 60mA
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MRF517
To-39
MRF517
MRF4427,
2N4427
MRF553
MRF553T
MRF607
2N6255
2N5179
VK200 mrf559
mrf559 vk200
nf c4 npn
MRF5812
RF Transistor Selection
2N4427
2N5179
2N6255
MRF4427
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RF2422
Abstract: No abstract text available
Text: TA0007 TA0007 Systems RF2422: A Direct Quadrature Modulator for 0.9GHz to 2.5GHz Wireless As wireless system designs have moved from carrier frequencies at approximately 900 MHz to wider bandwidth applications like Personal Communication System PCS phones at 1.8 GHz and wireless local area
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TA0007
RF2422:
DCS1800
RF2422
RF2422
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MB87S
Abstract: No abstract text available
Text: • bbS3R31 0 0 2 ^ 5 b 7bS « A P X “ N AUER PHILIPS/DISCRETE b7E D NPN 8 GHz wideband transistor DKT c ^ Philips Semiconductors DESCRIPTION Product specification BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications.
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bbS3R31
BFG198
OT223
MB87S
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transistor 1431a
Abstract: 1431A transistor
Text: N AMER PHILIPS/DISCRETE bb53131 oom*!? *i ObE D LTE42012R A T -3 3-g^r MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to a frequency of 4,2 GHz in c.w. conditions in military and professional applications.
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bb53131
LTE42012R
transistor 1431a
1431A transistor
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Untitled
Abstract: No abstract text available
Text: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband
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BFG135
OT223
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BFG134
Abstract: BJE 247
Text: b t . 5 3 ^3 1 Philips Semiconductors D D 3131S 36 □ M A P X Product specification NPN 7 GHz wideband transistor ^ BFG134 N AUER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for
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3131S
BFG134
OT103
OT103.
BFG134
BJE 247
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Untitled
Abstract: No abstract text available
Text: bb53^31 Philips Semiconductors QQgMflgg 335 WAPX Product specification NPN 4 GHz wideband transistor ^ BFG35 M APIER PHILIPS/DISCRETE b7E D DESCRIPTION PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features
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BFG35
OT223
BFG55.
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PHILIPS MOSFET MARKING
Abstract: BF998 TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate mcb351
Text: • ^53^31 aG23b34 Mbl ■ APX N AMER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification date of issue April 1991 FEATURES • Short channel transistor with high ratio |YfS I/C* • Low noise gain controlled amplifier to 1 GHz.
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BF998
OT143
PHILIPS MOSFET MARKING
BF998
TRANSISTOR mosfet BF998
dual gate mosfet
n-channel dual gate
mcb351
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PHILIPS MOSFET MARKING
Abstract: BF998R UBB087
Text: 00E3tM3 474 • Philips Semiconductors Data sheet status Product specification date of issue O ctob e r 1990 FEATURES • Short channel transistor with high ratio lYfs |/C S. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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00Z3fc
BF998R
OT143R
PHILIPS MOSFET MARKING
UBB087
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Untitled
Abstract: No abstract text available
Text: • P hilips Sem iconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfSI/C15. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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0023k.
BF998R
lYfSI/C15.
OT143R
bbS3T31
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transistor 20107
Abstract: transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier
Text: TARGET SYSTEMS PRODUCTS Function Type Description Cellular N AMPS /{E> TACS IS-54/-136 TDMA IS—95 CDMA Cordless GSM DCS1800 PCS PDC RF Amplifiers { SA5200 CTO CT1 SS X X Wireless Data DECT PHS 802.11 CDPD X X Gain block-1 GHZ PAGERS RF Front End SA611 1 GHz low voli LNA and mixer
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SA5200
SA611
SA2420
SA621
SA1620
SA1921
UAA2073
UAA2077AM
UAA2077BM
UAA2077CM
transistor 20107
transistor dk 50
PCD5042
bfg520w vco application note
BFG591 Application Notes
DK 51* transistor
bfg520 antenna preamplifier
BP547
bfg135 application note
MPSH10 small amplifier
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