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    DLN10E Search Results

    DLN10E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DLN10E Sanyo Semiconductor Low-loss Rectifier Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN4729 DLN10 Silicon Diffused Junction Type Low-loss Rectifier Features Package Dimensions • Fast reverse recovery time, small switching loss. · Peak reverse voltage : VRM=200 to 400V. · Average rectified current : IO=1.0A. unit:mm 1264


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    PDF EN4729 DLN10 DLN10] DLN10C DLN10E DLN10C] DLN10E]

    EQUIVALENT BYD33D

    Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
    Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and


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    PDF PBYR3045WT BYD73D CTB34M BYD73G SB1035 PBYR1040 1N5059 SB1040 EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent

    DLN10

    Abstract: DLN10C DLN10E
    Text: Ordering number:EN4729 DLN10 Silicon Diffused Junction Type Low-loss Rectifier Features Package Dimensions • Fast reverse recovery time, small switching loss. · Peak reverse voltage : VRM=200 to 400V. · Average rectified current : IO=1.0A. unit:mm 1264


    Original
    PDF EN4729 DLN10 DLN10] DLN10C DLN10E DLN10C] DLN10E] DLN10 DLN10C DLN10E

    DLN10

    Abstract: DLN10C DLN10E jkoe
    Text: KNo. N4729 SANYO -^ N O . 4729 1 21894 : VRM= 200-400V : Io = 1.0A 16 Jl 3e!t& Absol ute Maximum Ratings / Ta = 25°C Vrm Io Ifsm « JD 0 M [DLN10CI Ta = 25°C [DLNIOE] Ta = 25°C T€=137°C 50H ziE ?i^ IM fe'Jj& L r’M ^ A,sS-fS Tj Tstg DLN10C DLN10E 200


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    PDF N4729 DLN10C] DLN10E] DLN10C DLN10CJ, -400V DLN10E 21894YH^ AX-8450 DLN10 jkoe

    DLN10

    Abstract: DLN10C DLN10E AX-8450 EN4729 AX84
    Text: Ordering number: EN 47 2 9 Features •Fast reverse recovery time,small switching loss. • Peak reverse voltage : Vrm —200 to 400V. • Average rectified current : Io = 1.0A DLN10C DLN10E A bsolute Maximum Ratings at Ta =:25°C 200 400 Peak Reverse Voltage


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    PDF DLN10 200to400V. DLN10C DLN10E DLN10C1 DLN10E] DLN10C] DLN10 AX-8450 EN4729 AX84

    DBB08G

    Abstract: D0201AD DFJ106 SS2018 DLC20C sb30 09 SCHOTTKY BARRIER BRIDGE RECTIFIERS
    Text: High-speed Rectifiers Super fast-recovery diodes v a i(v ) 10(A) me . 1.0 DFJ10C DFJ10E DFJ10G 1.5 DFD15C DFD15E DFD15G 3.0 DFE30C 0FE3Œ DFE30G Package type br(ns) 600 <00 too too too DO-41 SS, 5 mm pitch D 0 -15L DO-201AD Ultrahigh-speed Rectifiers (Low-loss diodes)


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    PDF DFJ10C DFJ10E DFJ106 DO-41SS, DFD15C DFD15E DFD15G D0-15L DFE30C DFE30G DBB08G D0201AD SS2018 DLC20C sb30 09 SCHOTTKY BARRIER BRIDGE RECTIFIERS

    DBF60B

    Abstract: DBA40C DD50F oba3 DBB10C
    Text: High-speed Rectifiers Super fast recovery diodes Vrm 00 400 »0 10 » . OFJIOC DFJ10G 100 DO-41 SS 5 r m 15 DFD15C DFD15E DFD15G 100 DO-15L 3.0 DFE30C DFE30E DFE30G 100 00-201 AD 1.0 .DFJ1DE. " Package type


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    PDF DFD15C DFE30C DFD15E DFE30E DFJ10G DFD15G DFE30G DO-41 DO-15L DLE30B DBF60B DBA40C DD50F oba3 DBB10C

    DFJ10E

    Abstract: DBF60B DBB08B DLC20C DBF60E DBA150E DO-41SS
    Text: High-speed Rectifiers Super fast-recovery diodes V rm (V) lo (A) 1.0 DFJ10C DFJ10E DFJ10G 1.5 DFD15C DFD15E DFD15G 3.0 DFE30C DFE30E DFE30G Package type trr (ns} 600 200 100 y - .il DO-41 SS, 5 mm pitch 100 DO-15L 100 DO-201 AD Very High-speed Rectifiers (Low-loss diodes)


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    PDF DFJ10C DFJ10E DFJ10G DO-41SS, DFD15C DFD15E DFD15G DO-15L DFE30C DFE30E DBF60B DBB08B DLC20C DBF60E DBA150E DO-41SS