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    DM2G100SH12A Price and Stock

    Dawin Electronics Co Ltd DM2G100SH12AE

    High Power SPT+ and Lugged Type IGBT Module Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
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    ComSIT USA DM2G100SH12AE 18
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    DM2G100SH12A Datasheets Context Search

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    DM2G100SH12A

    Abstract: DM2G100
    Text: DM2G100SH12A May. 2009 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		DM2G100SH12A DM2G100SH12A DM2G100 PDF

    DM2G100SH12AE

    Abstract: DM2G100SH12A
    Text: DM2G100SH12AE May. 2009 High Power SPT+ & Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN’S IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		DM2G100SH12AE Moto250 DM2G100SH12AE DM2G100SH12A PDF

    dm2g100sh12al

    Abstract: DM2G100 dm2g100sh12a dm2g100sh
    Text: DM2G100SH12AL May. 2009 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		DM2G100SH12AL dm2g100sh12al DM2G100 dm2g100sh12a dm2g100sh PDF