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    Dawin Electronics Co Ltd DM2G150SH6NE

    High Power Rugged Type IGBT Module Insulated Gate Bipolar Transistor, 175A I(C), 600V V(BR)CES, N-Channel
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    ComSIT USA DM2G150SH6NE 24
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    dw DM2G150SH6N

    Electronic Component
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    ComSIT USA DM2G150SH6N 12
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    DM2G150SH6N

    Abstract: DM2G150SH6NE
    Text: D W DAWIN Electronics TM DM2G150SH6NE Nov. 2010 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN’S IGBT module devices are optim ized to reduce losses and switching noise in high frequency power conditioning electrical systems.


    Original     		PDF DM2G150SH6NE DM2G150SH6N DM2G150SH6NE

    DM2G150SH6N

    Abstract: No abstract text available
    Text: D W DAWIN Electronics TM DM2G150SH6N Aug. 2009 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN’S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems.


    Original     		PDF DM2G150SH6N DM2G150SH6N