Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DM2G150SH6NE Search Results

    SF Impression Pixel

    DM2G150SH6NE Price and Stock

    Dawin Electronics Co Ltd DM2G150SH6NE

    High Power Rugged Type IGBT Module Insulated Gate Bipolar Transistor, 175A I(C), 600V V(BR)CES, N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA DM2G150SH6NE 24
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    DM2G150SH6NE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DM2G150SH6N

    Abstract: DM2G150SH6NE
    Text: D W DAWIN Electronics TM DM2G150SH6NE Nov. 2010 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN’S IGBT module devices are optim ized to reduce losses and switching noise in high frequency power conditioning electrical systems.


    Original     		PDF DM2G150SH6NE DM2G150SH6N DM2G150SH6NE