DM9926
Abstract: SDM9926A
Text: S DM9926A S amHop Microelectronics C orp. November , 2002 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) TYP R ugged and reliable.
|
Original
|
DM9926A
300us
DM9926
SDM9926A
|
PDF
|
dm99
Abstract: SDM9926
Text: S DM9926 S amHop Microelectronics C orp. Augus t , 2002 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 30 @ V G S = 4.5V
|
Original
|
DM9926
300us
dm99
SDM9926
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S DM9926 S amHop Microelectronics C orp. Apr,27 2005 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.
|
Original
|
DM9926
|
PDF
|
SDM9926
Abstract: No abstract text available
Text: DM9926 SamHop Microelectronics Corp. May. 2004 ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m W ) Max Rugged and reliable. 30 @ VGS = 4.0V 20V 5A Surface Mount Package.
|
Original
|
SDM9926
DM9926
SDM9926
|
PDF
|