FT-82

Abstract: 064R DMD1006 DMD1006-A 20swg
Contextual Info: TetraFET DMD1006 DMD1006-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D 2 1 E 2 pls A B 3 C GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED G( 2 pls) F K M H J L D2 SOURCE GATE • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET DMD1006 DMD1006-A METAL GATE RF SILICON FET MECHANICAL DATA D 2 1 E 2 pls A B 3 C GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED G( 2 pls) F K M H J L D2 SOURCE GATE • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET DMD1006 DMD1006-A METAL GATE RF SILICON FET MECHANICAL DATA D 2 1 E 2 pls A B 3 C GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED G( 2 pls) F K M H FEATURES • SUITABLE FOR BROAD BAND APPLICATIONS J L • SIMPLE BIAS CIRCUITS

Contextual Info: TetraFET DMD1006 DMD1006-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D 2 1 E 2 pls A B 3 C GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED G( 2 pls) F K M H J L D2 SOURCE GATE • SUITABLE FOR BROAD BAND APPLICATIONS

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

GNS430

Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
Contextual Info: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon