DMF3068
Abstract: No abstract text available
Text: DMF3068 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandXr-Kp Test Freq9.4G Frequency Min. (Hz)8.2G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.0
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DMF3068
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opa1013 equivalent
Abstract: AGC OPA660 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 CCII APPLICATION 0525P
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
OPA660
opa1013 equivalent
AGC OPA660
2N2907
OPA1013
OPA660AP
OPA660AU
REF200
CCII APPLICATION
0525P
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KHN 10
Abstract: AGC OPA660 opa860 OPA660 OPA860ID OPA860IDR DMF3068 45dBmin Circuit diagram of 12v 1W LED driver
Text: OPA860 www.ti.com . SBOS331C – JUNE 2005 – REVISED AUGUST 2008 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE
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OPA860
SBOS331C
OPA860
80MHz,
95mA/V)
KHN 10
AGC OPA660
OPA660
OPA860ID
OPA860IDR
DMF3068
45dBmin
Circuit diagram of 12v 1W LED driver
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments OPA860 SBOS331B – JUNE 2005 – REVISED JUNE 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA and BUFFER OTA FEATURES DESCRIPTION • • • • The OPA860 is a versatile monolithic component designed for wide-bandwidth systems, including high
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OPA860
SBOS331B
80MHz,
95mA/V)
OPA860
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OPA660
Abstract: OPA860 OPA860ID OPA860IDR ota amplifier BJT with V-I characteristics
Text: BurrĆBrown Products from Texas Instruments OPA860 SBOS331B – JUNE 2005 – REVISED JUNE 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA and BUFFER OTA FEATURES DESCRIPTION • • • • The OPA860 is a versatile monolithic component designed for wide-bandwidth systems, including high
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OPA860
SBOS331B
OPA860
80MHz,
95mA/V)
1600MHz,
OPA660
OPA860ID
OPA860IDR
ota amplifier
BJT with V-I characteristics
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ota amplifier
Abstract: AGC OPA660 OPA660 OPA860 OPA860ID OPA860IDR SBOS331
Text: BurrĆBrown Products from Texas Instruments OPA860 SBOS331 – JUNE 2005 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA and BUFFER OTA FEATURES DESCRIPTION • • • • The OPA860 is a versatile monolithic component designed for wide-bandwidth systems, including high
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OPA860
SBOS331
OPA860
80MHz,
95mA/V)
1600MHz,
ota amplifier
AGC OPA660
OPA660
OPA860ID
OPA860IDR
SBOS331
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in6263
Abstract: BUF601
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
400MHz
OPA660
in6263
BUF601
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments OPA860 SBOS331A – JUNE 2005 – REVISED JANUARY 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA and BUFFER OTA FEATURES DESCRIPTION • • • • The OPA860 is a versatile monolithic component
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OPA860
SBOS331A
80MHz,
95mA/V)
OPA860
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Untitled
Abstract: No abstract text available
Text: OPA860 www.ti.com . SBOS331C – JUNE 2005 – REVISED AUGUST 2008 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE
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OPA860
SBOS331C
80MHz,
95mA/V)
OPA860
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transistor c1c
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments OPA860 SBOS331B – JUNE 2005 – REVISED JUNE 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA and BUFFER OTA FEATURES DESCRIPTION • • • • The OPA860 is a versatile monolithic component designed for wide-bandwidth systems, including high
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Original
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OPA860
SBOS331B
80MHz,
95mA/V)
OPA860
transistor c1c
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments OPA860 SBOS331B – JUNE 2005 – REVISED JUNE 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA and BUFFER OTA FEATURES DESCRIPTION • • • • The OPA860 is a versatile monolithic component designed for wide-bandwidth systems, including high
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OPA860
SBOS331B
80MHz,
95mA/V)
OPA860
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Circuit diagram of 12v 1W LED driver
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments OPA860 SBOS331B – JUNE 2005 – REVISED JUNE 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA and BUFFER OTA FEATURES DESCRIPTION • • • • The OPA860 is a versatile monolithic component designed for wide-bandwidth systems, including high
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OPA860
SBOS331B
80MHz,
95mA/V)
OPA860
Circuit diagram of 12v 1W LED driver
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2N2907
Abstract: OPA1013 OPA660 OPA660AP OPA660AU REF200 BUF601
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
OPA660
2N2907
OPA1013
OPA660AP
OPA660AU
REF200
BUF601
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in6263
Abstract: coil gold detector circuit diagram OPA660 R2M diode transconductance amplifier spice OPA660AU REF200 2N2907 BUF601 OPA1013
Text: OPA 660 OPA660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● HIGH SLEW RATE: 3000V/µs ● VIDEO/BROADCAST EQUIPMENT ● COMMUNICATIONS EQUIPMENT ● LOW DIFFERENTIAL GAIN/PHASE
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OPA660
850MHz
OPA660
660-1GC
470pF
470pF
1N4007
in6263
coil gold detector circuit diagram
R2M diode
transconductance amplifier spice
OPA660AU
REF200
2N2907
BUF601
OPA1013
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bjt 50kw
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments OPA860 SBOS331B – JUNE 2005 – REVISED JUNE 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA and BUFFER OTA FEATURES DESCRIPTION • • • • The OPA860 is a versatile monolithic component designed for wide-bandwidth systems, including high
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OPA860
SBOS331B
80MHz,
95mA/V)
OPA860
bjt 50kw
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IN6263
Abstract: 1N4007 BL transconductance amplifier spice 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 2N2907 spice
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
OPA660
IN6263
1N4007 BL
transconductance amplifier spice
2N2907
OPA1013
OPA660AP
OPA660AU
REF200
2N2907 spice
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Untitled
Abstract: No abstract text available
Text: OPA860 www.ti.com . SBOS331B – JUNE 2005 – REVISED JUNE 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE
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OPA860
SBOS331B
80MHz,
95mA/V)
1600MHz,
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IN6263
Abstract: AGC OPA660 R2M 45 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 sbos007
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
OPA660
IN6263
AGC OPA660
R2M 45
2N2907
OPA1013
OPA660AP
OPA660AU
REF200
sbos007
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Untitled
Abstract: No abstract text available
Text: OPA860 www.ti.com . SBOS331C – JUNE 2005 – REVISED AUGUST 2008 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE
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OPA860
SBOS331C
OPA860
80MHz,
95mA/V)
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DMJ3086
Abstract: DMJ4317 DME4750-000 DMF3068-000 mip 290 dmf5818 DMF6554-000 DME3040-000 DMJ3181-000 DMF3291-000
Text: ALPHA IN»/ S E M I C O N D U C T O R 33E D • Q S 6 S H M B 0 0 0 0 7 5 4 7 ■ ALP Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes : ^ L Features \ ■ Ideal for MIC Low 1/f Noise Low Intermodi Intermodulation Distortion Low Turn On Hermetically Sealed Packages
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OCR Scan
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DMV3946-000
DMB4500-000
DMB4501-000
DMB6780-000
DMB3000-000
DMB6782-000
DMB3001-000
DMB6781-000
DMB3003-000
DMB3004-000
DMJ3086
DMJ4317
DME4750-000
DMF3068-000
mip 290
dmf5818
DMF6554-000
DME3040-000
DMJ3181-000
DMF3291-000
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DMG-6414A
Abstract: DMF3068 DMF4384 diodos led DMH6570 dmj4317 DMF3243 DMF5847 DMJ4708 dmf5818
Text: 0585443 ALPHA ALPHA ~Ü3 DSflSMM3'DGGG3Sl S | ~ D J‘ - Q ' 7 —0 1 Silicon Beam-Lead and Chip Schottky Barrier INC/ SEMICONDUCTOR Mixer Diodes \ n i - ' i - =:- V] Features :IT • Ideal for MIC • Low 1/f Noise • Low Intermodulation Distortion • Low Turn On
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OCR Scan
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PDF
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DME3256-000
Abstract: DMF6554-000 DMB2855-000 DMJ3102-000 132-042 DMJ4317-000 DMJ3086-000 DMJ3086 DME3014-000 silicon di for microwave diode mixer
Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R _ 4ÛE D • 0 S Ô S 4 4 3 0 0 0 1 1 Q S ¿145 ■ ALP ék . Features '^ k \ / T *07*07 ^ / ■ Ideal for MIC ■ Low 1/f Noise Low Intermodulation Distortion Low Turn On
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OCR Scan
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PDF
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DMB2853-000
DMB2854-000
DMB2855-000
DMB2856-000
DMB6780-000
DMB6782-000
DMB3000-000
DMB3001-000
DMB6781-000
DMB3003-000
DME3256-000
DMF6554-000
DMJ3102-000
132-042
DMJ4317-000
DMJ3086-000
DMJ3086
DME3014-000
silicon di for microwave diode mixer
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DMJ4747
Abstract: DMJ4708 DMJ3102-000 DMF-5845 DMJ3086 DMF6554-000 DMF2190-000 DMJ4317-000 dme3013-000
Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes Features • ■ ' ±A Ideal for MIC Low 1/f Noise Low Intermodulation Distortion Low Turn On Hermetically Sealed Packages v v * uX ■ > * ' I < ^ p»iL VHM Description RF parameters, capacitance and breakdown voltage
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OCR Scan
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PDF
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DMB2853-000
DMB2854-000
DMB2855-000
DMB2856-000
DMB6780-000
DMB6782-000
DMB3000-000
DMB3001-000
DMB6781-000
DMB3003-000
DMJ4747
DMJ4708
DMJ3102-000
DMF-5845
DMJ3086
DMF6554-000
DMF2190-000
DMJ4317-000
dme3013-000
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DMJ3086
Abstract: DMK6635 DMB-4501 DME3030 DMF3059 KA band detector DMK50 DMF3068 DMJ3305 ME3011
Text: Schottky Barrier Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha Schottky barrier mixer and detector diodes by basic con struction, package style and frequency band. Pressure Contact
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OCR Scan
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DMC5501
DMC5504
DMF6130
DMC4037
DDL6672
DDC4562
DMC5910
DMB5880
DMB6411
DMC6224
DMJ3086
DMK6635
DMB-4501
DME3030
DMF3059
KA band detector
DMK50
DMF3068
DMJ3305
ME3011
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