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    DMN3730U Price and Stock

    Diodes Incorporated DMN3730U-7

    MOSFET N-CH 30V 750MA SOT23
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    DigiKey DMN3730U-7 Reel 90,000 3,000
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    Avnet Americas DMN3730U-7 Reel 57,000 8 Weeks 3,000
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    Mouser Electronics DMN3730U-7 28,440
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    Arrow Electronics DMN3730U-7 18,000 12 Weeks 3,000
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    DMN3730U-7 6,000 8 Weeks 3,000
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    DMN3730U-7 Cut Strips 1,007 8 Weeks 678
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    Newark DMN3730U-7 Cut Tape 8,170 5
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    DMN3730U-7 Reel 3,000
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    Bristol Electronics DMN3730U-7 8,979
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    Quest Components DMN3730U-7 7,183
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    DMN3730U-7 64
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    TME DMN3730U-7 1,504 1
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    Avnet Silica DMN3730U-7 6,000 10 Weeks 3,000
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    New Advantage Corporation DMN3730U-7 3,168,000 1
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    Win Source Electronics DMN3730U-7 132,500
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    Diodes Incorporated DMN3730UFB4-7

    MOSFET N-CH 30V 750MA 3DFN
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    DigiKey DMN3730UFB4-7 Cut Tape 16,288 1
    • 1 $0.54
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    DMN3730UFB4-7 Digi-Reel 16,288 1
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    DMN3730UFB4-7 Reel 15,000 3,000
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    Avnet Americas DMN3730UFB4-7 Reel 6,000 8 Weeks 3,000
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    Mouser Electronics DMN3730UFB4-7 2,874
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    Arrow Electronics DMN3730UFB4-7 Cut Strips 2,874 8 Weeks 459
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    TME DMN3730UFB4-7 3,000
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    Avnet Asia DMN3730UFB4-7 8 Weeks 3,000
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    New Advantage Corporation DMN3730UFB4-7 6,000 1
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    Diodes Incorporated DMN3730UFB4-7B

    MOSFET N-CH 30V 750MA 3DFN
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    DigiKey DMN3730UFB4-7B Digi-Reel 7,516 1
    • 1 $0.23
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    DMN3730UFB4-7B Cut Tape 7,516 1
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    • 10 $0.156
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    DMN3730UFB4-7B Reel 10,000
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    Avnet Americas DMN3730UFB4-7B Reel 8 Weeks 10,000
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    Mouser Electronics DMN3730UFB4-7B 8,424
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    Avnet Asia DMN3730UFB4-7B 16 Weeks 10,000
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    Avnet Silica DMN3730UFB4-7B 10 Weeks 10,000
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    New Advantage Corporation DMN3730UFB4-7B 20,000 1
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    Diodes Incorporated DMN3730UFB-7

    MOSFET N-CH 30V 750MA 3DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DMN3730UFB-7 Cut Tape 3,443 1
    • 1 $0.54
    • 10 $0.362
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    • 1000 $0.17526
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    DMN3730UFB-7 Digi-Reel 3,443 1
    • 1 $0.54
    • 10 $0.362
    • 100 $0.54
    • 1000 $0.17526
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    DMN3730UFB-7 Reel 3,000 3,000
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    Avnet Americas DMN3730UFB-7 Reel 8 Weeks 3,000
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    Mouser Electronics DMN3730UFB-7 7,675
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    Quest Components DMN3730UFB-7 1,148
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    TME DMN3730UFB-7 3
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    Avnet Asia DMN3730UFB-7 8 Weeks 3,000
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    Avnet Silica DMN3730UFB-7 6,000 10 Weeks 3,000
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    New Advantage Corporation DMN3730UFB-7 6,000 1
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    Win Source Electronics DMN3730UFB-7 263,703
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    Zetex / Diodes Inc DMN3730U-7

    Trans MOSFET N-CH 30V 0.94A 3-Pin SOT-23 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical DMN3730U-7 2,715,000 3,000
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    DMN3730U-7 18,000 3,000
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    DMN3730U-7 6,000 3,000
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    DMN3730U-7 1,007 678
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    Find more DMN3730U price and stock on Findchips.com

    DMN3730U Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DMN3730U Diodes 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Original PDF
    DMN3730U-7 Diodes FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 750MA SOT23 Original PDF
    DMN3730U-7 TY Semiconductor MOSFET N-CH 30V 0.85-0.94MA - SOT-23 Original PDF
    DMN3730UFB Diodes 30V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    DMN3730UFB4 Diodes 30V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    DMN3730UFB4-7 Diodes FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 750MA DFN Original PDF
    DMN3730UFB-7 Diodes FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 750MA DFN Original PDF

    DMN3730U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery


    Original     		PDF DMN3730U AEC-Q101

    DMN3730U-7

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V


    Original     		PDF DMN3730U AEC-Q101 DS35308 DMN3730U-7

    dmn3730ufb4

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data


    Original     		PDF DMN3730UFB4 AEC-Q101 DS35017 dmn3730ufb4

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Features and Benefits Product Summary V BR DSS • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V


    Original     		PDF DMN3730U AEC-Q101 DS35308

    DMN3730

    Abstract: No abstract text available
    Text: DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance


    Original     		PDF DMN3730UFB4 AEC-Q101 DS35017 DMN3730

    Untitled

    Abstract: No abstract text available
    Text: DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance


    Original     		PDF DMN3730UFB4 AEC-Q101 DS35017

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN3730UFB 30V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data


    Original     		PDF DMN3730UFB DS35018

    DFN1006H4-3

    Abstract: DMN3730UFB4 DMN3730UFB4-7
    Text: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data


    Original     		PDF DMN3730UFB4 DS35017 DFN1006H4-3 DMN3730UFB4 DMN3730UFB4-7

    DMN3730

    Abstract: DFN1006-3 DMN3730UFB DMN3730UFB-7 MARKING NE
    Text: A Product Line of Diodes Incorporated DMN3730UFB 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data


    Original     		PDF DMN3730UFB DS35018 DMN3730 DFN1006-3 DMN3730UFB DMN3730UFB-7 MARKING NE

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • 0.4mm ultra low profile package for thin application 0.9A   0.6mm package footprint, 10 times smaller than SOT23 Low VGS th , can be driven directly from a battery


    Original     		PDF DMN3730UFB4 AEC-Q101 DS35017

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data


    Original     		PDF DMN3730UFB4 DS35017

    DMN3730UFB-7

    Abstract: MOSFET 25 NE 50 Z
    Text: A Product Line of Diodes Incorporated DMN3730UFB 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data


    Original     		PDF DMN3730UFB AEC-Q101 DS35018 DMN3730UFB-7 MOSFET 25 NE 50 Z

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		PDF AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N

    complementary MOSFET TO252

    Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
    Text: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and


    Original     		PDF D-81541 A1103-04, complementary MOSFET TO252 zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4

    Untitled

    Abstract: No abstract text available
    Text: DATE: 28th November, 2012 PCN #: 2041 REV 02 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being


    Original     		PDF ZXMN2B14FHÂ ZXMN2F30FHÂ ZXMN2F34FHÂ ZXMN3A01FÂ ZXMN3A02N8Â ZXMN3A04DN8Â ZXMN3A06DN8Â ZXMN3A14FÂ ZXMN3B01FÂ ZXMN3B04N8Â

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502