Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN3730UFB 30V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data
|
Original
|
PDF
|
DMN3730UFB
DS35018
|
DMN3730
Abstract: DFN1006-3 DMN3730UFB DMN3730UFB-7 MARKING NE
Text: A Product Line of Diodes Incorporated DMN3730UFB 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data
|
Original
|
PDF
|
DMN3730UFB
DS35018
DMN3730
DFN1006-3
DMN3730UFB
DMN3730UFB-7
MARKING NE
|
DMN3730UFB-7
Abstract: MOSFET 25 NE 50 Z
Text: A Product Line of Diodes Incorporated DMN3730UFB 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data
|
Original
|
PDF
|
DMN3730UFB
AEC-Q101
DS35018
DMN3730UFB-7
MOSFET 25 NE 50 Z
|