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    Text: LET9070CB RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet - production data Features • Excellent thermal stability • Common source configuration • POUT @ 28 V = 70 W with 17 dB gain @ 945 MHz • BeO free package


    Original     		PDF LET9070CB 2002/95/EC LET9070CB DocID023782